TIP35, TIP35A, TIP35B, TIP35C

TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
TIP36 Series
●
125 W at 25°C Case Temperature
●
25 A Continuous Collector Current
●
40 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
VALUE
TIP35
80
TIP35A
100
E
T
E
L
O
S
B
O
TIP35B
V CBO
120
TIP35C
140
TIP35
40
TIP35A
TIP35B
VCEO
TIP35C
UNIT
60
80
V
V
100
VEBO
5
V
IC
25
A
ICM
40
A
IB
5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
½LIC2
90
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
250
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 5)
TIP35
40
TIP35A
60
TIP35B
80
TIP35C
100
TYP
MAX
V
VCE = 80 V
VBE = 0
TIP35
0.7
Collector-emitter
VCE = 100 V
VBE = 0
TIP35A
0.7
cut-off current
VCE = 120 V
VBE = 0
TIP35B
0.7
VCE = 140 V
VBE = 0
TIP35C
0.7
Collector cut-off
VCE = 30 V
IB = 0
TIP35/35A
1
current
VCE = 60 V
IB = 0
TIP35B/35C
1
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC = 1.5 A
transfer ratio
VCE =
4V
IC = 15 A
Collector-emitter
IB =
1.5 A
IC = 15 A
saturation voltage
IB =
5A
IC = 25 A
VCE =
4V
Emitter cut-off
current
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
1
(see Notes 5 and 6)
10
4
2
(see Notes 5 and 6)
IC = 25 A
mA
mA
50
1.8
(see Notes 5 and 6)
IC = 15 A
4V
mA
25
E
T
E
L
O
S
B
O
VCE =
UNIT
VCE = 10 V
IC =
1A
f = 1 kHz
25
VCE = 10 V
IC =
1A
f = 1 MHz
3
4
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
1
°C/W
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 15 A
IB(on) = 1.5 A
IB(off) = -1.5 A
1.2
µs
toff
Turn-off time
VBE(off) = -4.15 V
RL = 2 Ω
tp = 20 µs, dc ≤ 2%
0.9
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS635AA
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1
0·1
1·0
TCS635AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·0
0·1
E
T
E
L
O
S
B
O
10
100
IC = 300 mA
IC = 1 A
IC = 3 A
0·01
0·001
IC - Collector Current - A
0·01
0·1
VBE - Base-Emitter Voltage - V
100
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·8
10
25 A
20 A
15 A
10 A
IB - Base Current - A
Figure 1.
2·0
1·0
IC =
IC =
IC =
IC =
TCS635AC
VCE = 4 V
TC = 25°C
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1·0
10
100
IC - Collector Current - A
Figure 3.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS635AA
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
TIP35
TIP35A
TIP35B
TIP35C
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS635AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.