Power Transistors 2SC3944, 2SC3944A Silicon NPN epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A Unit: mm ■ Features ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC3944 base voltage 2SC3944A Collector to 2SC3944 Ratings 150 VCBO 180 150 VCEO emitter voltage 2SC3944A Emitter to base voltage VEBO Peak collector current Collector current Collector power TC=25°C dissipation (TC=25˚C) 180 A 1 A Tstg ■ Electrical Characteristics Parameter 2SC3944 current 2SC3944A Collector to base 2SC3944 voltage 2SC3944A Emitter to base voltage 0.7±0.1 7.5±0.2 16.7±0.3 4.2±0.2 1.3±0.2 0.5 +0.2 –0.1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2.0 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Collector cutoff 0.8±0.1 V 1.5 Tj 1.4±0.1 5.08±0.5 IC Storage temperature φ3.1±0.1 1 ICP Junction temperature 2.7±0.2 2.54±0.25 V 15 4.2±0.2 5.5±0.2 V 5 PC Ta=25°C Unit 10.0±0.2 4.0 ● 14.0±0.5 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SA1535 and 2SA1535A, which is optimum for the driver-stage of a 60 to 100W output amplifier Full-pack package which can be installed to the heat sink with one screw Solder Dip ● ICBO Conditions min VCB = 180V, IE = 0 10 150 IC = 1mA, IB = 0 VEBO IE = 10µA, IC = 0 5 hFE1 max 10 VCEO * typ VCB = 150V, IE = 0 Unit µA V 180 V VCE = 10V, IC = 150mA 95 160 hFE2 VCE = 5V, IC = 500mA 50 100 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 0.5 2 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA 1 2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 10MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 30 Forward current transfer ratio *h FE1 220 MHz 50 pF Rank classification Rank Q R hFE1 95 to 155 130 to 220 1 Power Transistors 2SC3944, 2SC3944A VCE(sat) — IC 15 10 5 0 0 20 40 60 80 100 120 140 160 IC/IB=10 3 1 0.3 TC=100˚C 25˚C 0.1 –25˚C 0.03 0.01 0.01 Ambient temperature Ta (˚C) 0.03 Transition frequency fT (MHz) Forward current transfer ratio hFE 25˚C –25˚C 30 10 3 0.03 0.1 0.3 Area of safe operation (ASO) Single pulse TC=25˚C t=<50µs DC 0.3 t=10ms 0.1 1ms 0.03 2SC3944 0.01 0.003 0.001 1 3 10 30 100 2SC3944A Collector current IC (A) ICP IC 300 1000 Collector to emitter voltage VCE (V) 2 0.1 0.03 0.03 0.1 0.3 1 Cob — VCB 100 300 200 100 IE=0 f=1MHz TC=25˚C 80 60 40 20 0 – 0.03 – 0.1 – 0.3 Emitter current IE (A) 10 1 100˚C 25˚C 0.3 Collector current IC (A) VCB=10V f=10MHz TC=25˚C 0 – 0.01 1 Collector current IC (A) 3 TC=–25˚C 1 0.01 0.01 1 400 VCE=10V 1 0.01 0.3 3 fT — IE TC=100˚C 100 0.1 IC/IB=10 Collector current IC (A) hFE — IC 1000 300 VBE(sat) — IC 10 Base to emitter saturation voltage VBE(sat) (V) 20 10 Collector output capacitance Cob (pF) Collector power dissipation PC (W) TC=Ta Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 25 –1 1 3 10 30 100 Collector to base voltage VCB (V)