TIP110, TIP111, TIP112

TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
TIP115, TIP116 and TIP117
TO-220 PACKAGE
(TOP VIEW)
●
50 W at 25°C Case Temperature
●
4 A Continuous Collector Current
B
1
●
Minimum hFE of 500 at 4V, 2 A
C
2
E
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
TIP111
V CBO
E
T
E
L
O
S
B
O
TIP112
TIP110
Collector-emitter voltage (IB = 0)
TIP111
V CEO
TIP112
Emitter-base voltage
VALUE
UNIT
60
TIP110
80
V
100
60
80
V
100
VEBO
5
V
IC
4
A
ICM
6
A
IB
50
mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
½LIC2
25
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
TEST CONDITIONS
MIN
TIP110
IC = 30 mA
IB = 0
(see Note 5)
TYP
MAX
TIP111
80
TIP112
100
V
VCE = 30 V
IB = 0
TIP110
2
V CE = 40 V
IB = 0
TIP111
2
V CE = 50 V
IB = 0
TIP112
2
VCB = 60 V
IE = 0
TIP110
1
V CB = 80 V
IE = 0
TIP111
1
V CB = 100 V
IE = 0
TIP112
1
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC = 1 A
transfer ratio
VCE =
4V
IC = 2 A
8 mA
IC = 2 A
4V
IC = 2 A
Collector cut-off
current
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IB =
VCE =
4A
mA
mA
(see Notes 5 and 6)
2.5
V
(see Notes 5 and 6)
2.8
V
3.5
V
MAX
UNIT
(see Notes 5 and 6)
IB = 0
mA
2
1000
500
E
T
E
L
O
S
B
O
IE =
UNIT
60
(see Notes 5 and 6)
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
ton
Turn-on time
toff
Turn-off time
TEST CONDITIONS
†
MIN
IB(on) = 8 mA
IB(off) = -8 mA
2.6
µs
V BE(off) = -5 V
RL = 15 Ω
tp = 20 µs, dc ≤ 2%
4.5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
IC = 2 A
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS110AA
20000
TC = -40°C
TC = 25°C
TC = 100°C
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
0·5
E
T
E
L
O
S
B
O
VCE = 4 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS110AB
2·0
5·0
0
0·5
IC - Collector Current - A
1·0
TC = -40°C
TC = 25°C
TC = 100°C
5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS110AA
1·0
0·1
E
T
E
L
O
S
B
O
TIP110
TIP111
TIP112
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AA
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.