TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 TO-220 PACKAGE (TOP VIEW) ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current B 1 ● Minimum hFE of 1000 at 3 V, 3 A C 2 E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) TIP121 V CBO E T E L O S B O TIP122 TIP120 Collector-emitter voltage (IB = 0) TIP121 V CEO TIP122 Emitter-base voltage VALUE UNIT 60 TIP120 80 V 100 60 80 V 100 VEBO 5 V IC 5 A ICM 8 A IB 0.1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 65 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC2 50 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperatur e PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter breakdown voltage Collector-emitter cut-off current TEST CONDITIONS MIN TIP120 IC = 30 mA IB = 0 (see Note 5) TYP MAX TIP121 80 TIP122 100 V VCE = 30 V IB = 0 TIP120 0.5 VCE = 40 V IB = 0 TIP121 0.5 VCE = 50 V IB = 0 TIP122 0.5 VCB = 60 V IE = 0 TIP120 0.2 VCB = 80 V IE = 0 TIP121 0.2 VCB = 100 V IE = 0 TIP122 0.2 VEB = 5V IC = 0 Forward current VCE = 3V IC = 0.5 A transfer ratio VCE = 3V IC = 3A Collector-emitter IB = 12 mA IC = 3A saturation voltage IB = 20 mA IC = 5A VCE = IC = 3A Collector cut-off current Emitter cut-off current Base-emitter voltage Parallel diode forward voltage 3V 2 (see Notes 5 and 6) 5A mA mA 1000 2 (see Notes 5 and 6) 4 (see Notes 5 and 6) IB = 0 mA 1000 E T E L O S B O IE = UNIT 60 V 2.5 V 3.5 V MAX UNIT (see Notes 5 and 6) NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP RθJC Junction to case thermal resistance 1.92 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † ton Turn-on time toff Turn-off time TEST CONDITIONS † MIN TYP IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1.5 µs VBE(off) = -5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 8.5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS120AA 40000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 E T E L O S B O VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 TCS120AB 2·0 5·0 0 0·5 IC - Collector Current - A 1·0 TC = -40°C TC = 25°C TC = 100°C 5·0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS120AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 5·0 IC - Collector Current - A Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS120AA IC - Collector Current - A DC Operation tp = 300 µs, d = 0.1 = 10% 10 1·0 E T E L O S B O TIP120 TIP121 TIP122 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS120AA Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.