TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS ● 20 W Pulsed Power Dissipation ● 100 V Capability ● 2 A Continuous Collector Current ● 4 A Peak Collector Current C ● Customer-Specified Selections Available B LP PACKAGE (TOP VIEW) E 1 2 3 MDTRAB absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) E T E L O S B O TIPP32B V CBO -60 -80 TIPP32C -100 TIPP32 -40 TIPP32A TIPP32B UNIT -40 TIPP32 TIPP32A VALUE VCEO TIPP32C -60 -80 V V -100 VEBO -5 V IC -2 A ICM -4 A IB -1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 0.8 W Pulsed power dissipation (see Note 3) PT 20 W Operating junction temperature range Tj -55 to +150 °C Tstg -55 to +150 °C TL 260 °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C. 3. V CE = 20 V, IC = 1 A, tp = 10 ms, duty cycle ≤ 2%. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPP32, TIPP32A,TIPP32B, TIPP32C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -5 mA IB = 0 (see Note 4) MIN TIPP32 -40 TIPP32A -60 TIPP32B -80 TIPP32C -100 TYP MAX V VCE = -40 V VBE = 0 TIPP32 -0.2 Collector-emitter VCE = -60 V VBE = 0 TIPP32A -0.2 cut-off current VCE = -80 V VBE = 0 TIPP32B -0.2 VCE = -100 V VBE = 0 TIPP32C -0.2 Collector cut-off VCE = -30 V IB = 0 TIPP32/32A -0.3 current VCE = -60 V IB = 0 TIPP32B/32C -0.3 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -1 A transfer ratio VCE = -4 V IC = -2 A IB = -375 mA IC = -2 A VCE = IC = -2 A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio -4 V UNIT mA mA -1 mA (see Notes 4 and 5) -1 V (see Notes 4 and 5) -1.5 V (see Notes 4 and 5) 20 10 E T E L O S B O VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 2 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.