Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) 2SB935 –50 –20 VCEO emitter voltage 2SB935A –40 V VEBO –5 V Peak collector current ICP –15 A Collector current IC –10 A dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg current 2SB935A Collector to emitter 2SB935 voltage 2SB935A Forward current transfer ratio R0.5 R0.5 0 to 0.4 2.54±0.3 1.1 max. 5.08±0.5 ˚C –55 to +150 ˚C 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 Conditions min typ max VCB = –40V, IE = 0 –50 VCB = –50V, IE = 0 –50 IEBO VEB = –5V, IC = 0 –50 VCEO IC = –10mA, IB = 0 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = –2A 90 ICBO Emitter cutoff current 0.8±0.1 150 Symbol 2SB935 1.0±0.1 (TC=25˚C) Parameter Collector cutoff 6.0±0.3 W 1.3 ■ Electrical Characteristics 3.4±0.3 V Emitter to base voltage Collector power TC=25°C Unit: mm 8.5±0.2 14.7±0.5 Collector to –40 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 +0.4 2SB935A 2 3.0–0.2 2SB935 base voltage 1 Unit 4.4±0.5 Collector to Ratings +0 Symbol 1.5–0.4 Parameter 5.08±0.5 10.0±0.3 ■ 1.1max. 2.0 ● 1.5max. 4.4±0.5 ● 2.0 Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ● 10.5min. ■ Features 1.5±0.1 10.0±0.3 For low-voltage switching –20 Unit µA µA V –40 260 Collector to emitter saturation voltage VCE(sat) IC = –7A, IB = – 0.23A – 0.6 V Base to emitter saturation voltage VBE(sat) IC = –7A, IB = – 0.23A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 150 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 200 pF Turn-on time ton 0.1 µs Storage time tstg 0.5 µs Fall time tf 0.1 µs *h FE2 IC = –2A, IB1 = –66mA, IB2 = 66mA Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SB935, 2SB935A IC — VCE TC=25˚C (1) –10 30 20 10 –100mA –80mA –8 –60mA –6 –30mA –20mA –2 –10mA (2) (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –12 100˚C 25˚C – 0.03 – 0.3 –1 –3 300 TC=100˚C 100 –25˚C 25˚C 30 10 3 300 100 30 10 3 –1 –3 –10 –30 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 ton, tstg, tf — IC Switching time ton,tstg,tf (µs) 10 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C 3 1 Non repetitive pulse TC=25˚C –30 ICP tstg 0.3 ton –10 t=1ms IC 10ms –3 300ms –1 – 0.3 0.1 tf – 0.1 0.03 – 0.03 0.01 –3 –10 –30 –100 Collector to base voltage VCB (V) –10 Area of safe operation (ASO) 3 –1 –3 –100 f=1MHz TC=25˚C 30 –1 Collector current IC (A) 10 100 –10 1000 Cob — VCB 300 –3 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) 1000 –1 3000 1 – 0.1 – 0.3 –10 10000 1 – 0.1 – 0.3 – 0.3 Collector current IC (A) VCE=–2V 3000 Collector current IC (A) 3000 – 0.01 – 0.1 Collector current IC (A) – 0.01 – 0.1 – 0.03 fT — IC 1000 TC=–25˚C –1 –25˚C 10000 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 – 0.1 Collector output capacitance Cob (pF) –10 25˚C hFE — IC IC/IB=30 – 0.3 2 –8 TC=100˚C Collector to emitter voltage VCE (V) VBE(sat) — IC –10 –6 –1 – 0.1 Transition frequency fT (MHz) 0 –3 – 0.3 –40mA –4 IC/IB=30 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) –8 – 0.01 – 0.1 – 0.3 2SB935A 40 IB=–160mA –10 2SB935 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC –12 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Power Transistors 2SB935, 2SB935A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3