PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 3 2 Parameter Symbol Rating Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −55 to +150 °C + 0.1 0.15 − 0.05 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7 ± 0.1 0.9 ± 0.1 0.2 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package + 0.1 ■ Features 0.2 ± 0.1 1 : Anode 2 : NC 3 : Cathode EIAJ：SC-70 S-Mini Type Package (3-pin) Marking Symbol: MY Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 100 nA Reverse current (DC) IR VR = 40 V Forward voltage (DC) VF IF = 100 mA 1.05 1.2 V Diode capacitance CD VR = 15 V, f = 1 MHz 0.3 0.5 pF Forward dynamic resistance* rf1 IF = 10 µA, f = 100 MHz rf2 IF = 10 mA, f = 100 MHz 1 2 6 kΩ 10 Ω Note) 1．Rated input/output frequency: 100 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA3Z551 PIN Diodes IF V F 25°C Ta = 60°C 80 60 40 20 f = 1 MHz Ta = 25°C 1 000 VR = 40 V 5 Diode capacitance CD (pF) Forward current IF (mA) 100 IR Ta CD VR 10 100 Reverse current IR (nA) 120 3 2 1 0.5 0.3 10 1 0.1 0.2 − 40°C 0 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 2 1.2 0.1 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C)