1N4001GTHRU 1N4007G R GLASS PASSIVATED GENERAL PURPOSE RECTIFIER FEATURES SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -1.0Ampere S E M I C O N D U C T O R DO-41 Glass passivated cavity-free junction Capable of meeting environmental standards of MIL-S-19500 1.0Ampere operation at Ta=75℃ and 55℃ with no thermal runaway 1.0(25.4) MIN JF Typical IR less than 0.1uA 0.107(2.7) 0.080(2.0) DIA High temperature soldering guaranteed:260℃/10 seconds at terminals Plastic Package has Under writers Laboratory Flammability Classtification 94V-0 Component in accordance to RoHs 2002/95/EC and WEEE 2002/96/EC 0.205(5.20) 0.180(4.10) MECHANICAL DATA Case: JEDEC DO-41 molded plastic body Terminals: Lead solderable per MIL-STD-750,method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012ounce, 0.33 gram 1.0(25.4) MIN 0.034(0.85) 0.026(0.65) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ) Symbols 1N 4001G 1N 4002G 1N 4003G 1N 4004G 1N 4005G 1N 4006G 1N 4007G 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 Unis Maximum DC Blocking Voltage VRRM VRMS VDC Maximum average Forward Rectified Current 0.375"(9.5mm) lead length at TA=75 C I(AV) 1.0 Amp Peak Forward Surge Current (8.3ms half sinewave superimposed on rated load (JEDEC method) TA=75 C IFSM 30.0 Amps VF 1.0 Volts Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum Instantaneous Forward Voltage at 1.0 A Maximum Reverse current at rated DC Blocking Voltage TA =25 C TA =125 C 5.0 IR Typical Thermal resistance (Note 2) R Typical Junction Capacitance(Note 1) CJ Operating and Storage temperature Range TJ TSTG 100.0 JA Volts Volts Volts A 65.0 C/W 10.0 PF -65 to+175 C Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V DC. 2.Mount on Cu-Pad Size 5mm×5mm on P.C.B. JINAN JINGHENG ELECTRONICS CO., LTD. 6-10 HTTP://WWW.JINGHENGGROUP.COM SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES 1N4001G THRU 1N4007G FIG.2-TYPICAL FORWARD CHARACTERISTICS 1.25 1.00 INSTANTANEOUS FORWARD CURRENT( AMPERES) AVERAGE FORWARD CURRENT (AMPERES) FIG.1-FORWARD CURRENT DERATING CURVE 0.75 0.50 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.25 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) 20 10 1 TJ=25 C PULSE WIDTH=300 S 1% DUTY CYCLE 0.1 0.01 FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 0.6 0.8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 40 30 FIG.4-TYPICAL REVERSE CHARACTERISTICS 20 INSTANTANEOUS REVERSE CURRENT ( A) PEAK FORWARD SURGE CURRENT(AMPERES) 50 10 0 1 10 100 NUMBER OF CYCLES AT 60Hz FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE(pF) 100 10 TJ=100 C 1.0 0.1 TJ=25 C 0.01 0 20 40 60 80 100 120 TJ=25 C PERCENT OF RATED PEAK REVERSE VOLTAGE % 10 1 0.1 1 10 100 REVERSE VOLTAGE. (VOLTS) JINAN JINGHENG ELECTRONICS CO., LTD. 6-11 HTTP://WWW.JINGHENGGROUP.COM 140