PANASONIC 2SK2571

Power F-MOS FETs
2SK2571
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
unit: mm
15.5±0.5
10.0
4.5
VDSS
450
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±13
A
Pulse
IDP
±26
A
EAS*
200
mJ
Avalanche energy capacity
Allowable power
TC = 25°C
dissipation
Ta = 25°C
PD
100
2.0
18.6±0.5
0.7±0.1
5.5±0.3
Unit
Drain to Source breakdown voltage
Drain current
*
Ratings
5˚
5˚
5.45±0.3
5˚
1
2
3
2.0
Symbol
3.3±0.3
0.7±0.1
5.45±0.3
5˚
23.4
22.0±0.5
2.0 1.2
5˚
4.0
2.0±0.2
1.1±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
5˚
26.5±0.5
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
3.0±0.3
φ3.2±0.1
1: Gate
2: Drain
3: Source
TOP-3E Package
W
3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 2.4mH, IL = 13A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 360V, VGS = 0
100
µA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 7A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 7A
Diode forward voltage
VDSF
IDR = 13A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
450
V
2
0.34
5
5
V
0.45
Ω
8
S
−2
V
1700
pF
300
pF
120
pF
110
ns
90
ns
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
1.25
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
41.67
°C/W
VDD = 150V, ID = 7A
VGS = 10V, RL = 21.4Ω
220
ns
1
Power F-MOS FETs
2SK2571
PD  Ta
Area of safe operation (ASO)
Drain current ID (A)
IDP
ID
t=1ms
10
DC
100ms
1
10ms
Allowable power dissipation PD (W)
120
Non repetitive pulse
TC=25˚C
IAS  L-load
102
(1) TC=Ta
(2) Without heat sink
PD=3.0W
100
Avalanche current IAS (A)
102
80
(1)
60
40
20
TC=25˚C
10
E=200mJ
1
(2)
10–1
10–1
1
102
10
0
Drain to source voltage VDS (V)
20
40
ID  VGS
15
10
5
0
RDS(on)  ID
VDS=25V
ID=1mA
5
4
3
2
1
0
4
6
8
10
0
Gate to source voltage VGS (V)
25
50
75
100
125
VDS  VGS
20
ID=26A
10
13A
5
6.5A
20
25
30
Gate to source voltage VGS (V)
2
15V
0.2
0
0
5
10
15
20
25
Ciss, Coss, Crss  VDS
10000
VDS=25V
TC=25˚C
f=1MHz
TC=25˚C
3000
15
Ciss
1000
10
5
0
15
VGS=10V
0.4
Drain current ID (A)
3.25A
0
10
0.6
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
25
Forward transfer admittance |Yfs| (S)
30
5
0.8
| Yfs |  ID
TC=25˚C
0
1.0
150
20
15
TC=25˚C
Case temperature TC (˚C)
35
102
10
1.2
Drain to source ON-resistance RDS(on) (Ω)
Gate threshold voltage Vth (V)
20
2
1
L-load (mH)
Vth  TC
25
Drain current ID (A)
80 100 120 140 160
6
VDS=25V
TC=25˚C
Drain to source voltage VDS (V)
60
Ambient temperature Ta (˚C)
30
0
10–1
10–1
0
103
0
5
10
15
20
Drain current ID (A)
25
300
Coss
100
Crss
30
10
0
50
100
150
200
250
Drain to source voltage VDS (V)
Power F-MOS FETs
2SK2571
ton, tf, td(off)  ID
ID=13A
td(off)
200
150
ton
100
tf
50
0
10
250
VDS
8
200
VGS
150
6
100
4
50
2
0
0
2
4
6
8
10
20
0
Drain current ID (A)
20
40
60
80
Gate to source voltage VGS (V)
250
12
300
VDD=150
VGS=10V
TC=25˚C
Drain to source voltage VDS (V)
Switching time ton,tf,td(off) (ns)
300
VDS, VGS  Qg
0
100
Gate charge amount Qg (nC)
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
102
Note: Rth was measured at Ta=25˚C
and under natural convection.
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
10
1
10–1
10–2
10–3
10–2
10–1
1
10
102
103
Time t (s)
3