BGS12PL6 Data Sheet (3.6 MB, EN)

BGS12PL6
General purpose RF CMOS power SPDT Switch
in ultra small package with 0.77mm2 footprint
Data Sheet
Revision 2.4, 2014-05-27
Power Management & Multimarket
Edition May 27, 2014
Published by
Infineon Technologies AG
81726 Munich, Germany
c
2012
Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGS12PL6
Revision History
Document No.: BGS12PL6.pdf
Previous Version: v2.3, April 01, 2014
Page
Subjects (major changes since last revision)
10
Updated Temperature range (Table 6)
Trademarks of Infineon Technologies AG
AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM ,CoolGaNTM ,CoolMOSTM , CoolSETTM , CoolSiCTM , CORECONTROLTM ,
DAVETM , DI-POLTM ,EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM , eupecTM ,
FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , I2 RFTM , IsoPACKTM , MIPAQTM , ModSTACKTM , my-dTM , NovalithICTM ,
OmniTuneTM , OptiMOSTM , ORIGATM , OPTIGATM , PROFETTM , PRO-SILTM , PRIMARIONTM , PrimePACKTM , RASICTM ,
ReverSaveTM , SatRICTM , SIEGETTM , SIPMOSTM , SOLID FLASHTM , SmartLEWISTM , TEMPFETTM , thinQ!TM , TriCoreTM ,
TRENCHSTOPTM .
Other Trademarks
Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , PRIMECELLTM , REALVIEWTM ,
THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth
SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM , FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa
Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium.
HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data
Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks,
Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MifareTM of
NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO.,
MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM
Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc.
SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO
YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI
KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of
Texas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex
Limited.
Last Trademarks Update 2012-12-13
Data Sheet
3
Revision 2.4 - 2014-05-27
BGS12PL6
Contents
1 Features
7
2 Product Description
7
3 Maximum Ratings
9
4 Operation Ranges
9
5 RF Characteristics
10
6 Pin Description
12
7 Package Information
12
Data Sheet
4
Revision 2.4 - 2014-05-27
BGS12PL6
List of Figures
1
2
3
4
5
6
BGS12PL6 Block Diagram .
Pin Configuration . . . . . .
Package Outline . . . . . .
Footprint . . . . . . . . . . .
Pin 1 Marking (top view) . .
Tape Drawing for TSLP-6-4
Data Sheet
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Revision 2.4 - 2014-05-27
BGS12PL6
List of Tables
1
2
3
4
5
6
7
8
Ordering Information
Truth Table . . . . .
Maximum Ratings .
Operation Ranges .
RF Input Power . . .
RF Characteristics .
Pin Description . . .
Mechanical Data . .
Data Sheet
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Revision 2.4 - 2014-05-27
BGS12PL6
BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small
package with 0.77mm2 footprint
1 Features
• 2 high-linearity TRx paths with power handling capability of up to
35 dBm
• All ports fully symmetrical
• Low insertion loss
• Low harmonic generation
• High port-to-port isolation
• 0.1 to 4 GHz coverage
• High ESD robustness
• On-chip control logic
• Very small leadless and halogen free package TSLP-6-4
(0.7x1.1mm2 ) with super low height of 0.31 mm
• No decoupling capacitors required if no DC applied on RF lines
• RoHS compliant package
2 Product Description
The BGS12PL6 general purpose RF MOS power switch is designed to cover a broad range of high power applications
from 30 MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design
of its single pole double throw configuration, as shown in Figure 1 offers high design flexibility.
This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control
input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 35 dBm, resulting in
linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1 GHz, 0.46 dB
in the 2 GHz and 0.6 dB in the 3 GHz range.
The BGS12PL6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs
with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
The device has a very small size of only 0.7x 1.1mm2 and a low height of 0.31mm. No decoupling capacitors are
required in typical applications as long as no DC is applied to any RF port.
Table 1: Ordering Information
Type
Package
Marking
BGS12PL6
TSLP-6-4
P
Data Sheet
7
Revision 2.4 - 2014-05-27
BGS12PL6
RFin
RF1
RF2
GND
Decoder
+ESD
Vdd
Ctrl
Figure 1: BGS12PL6 Block Diagram
Table 2: Truth Table
Switched Paths
Ctrl
RFin - RF1
0
RFin - RF2
1
Data Sheet
8
Revision 2.4 - 2014-05-27
BGS12PL6
3 Maximum Ratings
Table 3: Maximum Ratings at TA = 25 ◦ C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply Voltage
Vdd
-0.5
–
5.5
V
–
Control Voltage
VCtrl
-0.3
–
3.6
V
–
Storage Temperature Range
TSTG
-55
–
150
◦
–
RF Input Power at all RF Ports
PRF
–
–
36
Junction Temperature
C
dBm
CW
Tj
–
–
125
◦
C
–
VESD_HBM
−1
–
+1
kV
–
VESD_RFin
−8
–
+8
kV
RFin versus GND, with
ESD Capability
Human Body Model 1)
ESD Capability RFin Port
2)
27 nH shunt inductor
1)
2)
Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 kΩ, C = 100 pF).
IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Attention:
Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Ambient Temperature
TA
-40
25
85
RF Frequency
f
0.1
–
Supply Voltage
Vdd
2.4
Control Voltage Low
VCtrl_L
-0.3
Control Voltage High
VCtrl_H
1.4
◦
Note / Test Condition
C
–
4
GHz
–
–
3.6
V
–
–
0.3
V
–
–
Vdd
V
–
Table 5: RF Input Power
Parameter
RF Input Power (50Ω)
Data Sheet
Symbol
PIn
Values
Min.
Typ.
Max.
–
–
35
9
Unit
Note / Test Condition
dBm
–
Revision 2.4 - 2014-05-27
BGS12PL6
5 RF Characteristics
Table 6: RF Characteristics
Test Conditions (unless otherwise specified):
• Terminating port impedance: Z0 = 50 Ω
• Temperature range: TA = -40 ... +85 ◦ C
• Supply voltage: Vdd = 2.4 ... 3.6 V
• Input power: PIN = 0 dBm
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
0.27
0.36
0.55
dB
699-915 MHz
0.36
0.46
0.70
dB
1710-1910 MHz
0.46
0.56
0.85
dB
2170-2690 MHz
0.61
0.77
1.15
dB
3800 MHz
0.33
0.40
0.36
0.46
0.40
0.50
dB
dB
699-915 MHz
1710-1910 MHz
0.52
0.56
0.65
dB
2170-2690 MHz
0.65
0.77
0.90
dB
3800 MHz
20
25
35
dB
699-915 MHz
16
20
28
dB
1710-1910 MHz
14
18
27
dB
2170-2690 MHz
12
15
20
dB
3800 MHz
34
37
–
dB
699-915 MHz
ISORFin−RFx 27
30
–
dB
1710-1910 MHz
23
27
–
dB
2170-2690 MHz
19
22
–
dB
3800 MHz
45
50
–
dB
699-915 MHz
34
36
–
dB
1710-1910 MHz
28
31
–
dB
2170-2690 MHz
24
27
–
dB
3800 MHz
–
38
–
dBm
699 - 2700 MHz
Insertion Loss
IL
All RF Ports
1
Insertion Loss
All RF Ports
IL
Return Loss
All RF Ports
RL
Isolation
RFin to RF1/RF2 Port
RF1 to RF2 Port
ISOPort−Port
P0.1 dB Compression Point
All RF Ports
1
P0.1dB
TA = +25 ◦ C, Vdd = 3 V
Data Sheet
10
Revision 2.4 - 2014-05-27
BGS12PL6
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
-90
-80
-70
dBc
f = 824 MHz, Pin = 27.5 dBm,
-100
-90
-80
dBc
50Ω, 50 % duty cycle
1
Harmonic Generation up to 12.75 GHz
All RF Ports, 2nd Harmonic
rd
All RF Ports, 3 Harmonic
PHarm
1,2
Intermodulation Distortion in Rx Band
IMD2, Low
IMD2Low
–
-110
-100
dBm
IMD3
IMD3
–
-110
-100
dBm
IMD2, High
IMD2High
–
-110
-100
dBm
Tx = 15 dBm,
Interferer = -15 dBm, 50Ω
Switching Time and Current Consumption
RF Rise Time
t10%−90%
–
0.55
1.5
µs
10% - 90% of RF Signal
Ctrl to RF Time
tCtrl−RF
–
1.4
3
µs
50% of Ctrl Signal to 90% of
Supply Current
Idd
80
200
350
µA
–
Control Current
ICtrl
–
1
10
µA
–
RF Signal
Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads.
1
TA = +25 ◦ C, Vdd = 3 V
2
With external shunt L
Data Sheet
11
Revision 2.4 - 2014-05-27
BGS12PL6
6 Pin Description
Vdd
4
3
RF1
RFIN
5
2
GND
CTRL
6
1
RF2
Figure 2: Pin Configuration
Table 7: Pin Description
Pin No.
Name
Pin
Buffer
Type
Type
Function
1
RF2
I/O
RF Port 2
2
GND
GND
Ground
3
RF1
I/O
RF Port 1
4
Vdd
PWR
Supply Voltage
5
RFIN
I/O
RF Port In
6
CTRL
I
Control Pin
7 Package Information
Table 8: Mechanical Data
Parameter
Symbol
Value
Unit
X-Dimension
X
0.7 ± 0.05
mm
Y-Dimension
Y
1.1 ± 0.05
mm
Size
Size
0.77
mm2
Height
H
0.31+0.01/−0.02
mm
Data Sheet
12
Revision 2.4 - 2014-05-27
BGS12PL6
Top view
Bottom view
(0.05)
3
2
1.1 ±0.05
4
5
1
6
(0.05)
0.2 ±0.035 1)
0.05 MAX.
0.4
0.2 ±0.035 1)
(0.05)
(0.05)
0.7 ±0.05
+0.01
0.31 -0.02
0.4
Pin 1 marking
1) Dimension applies to plated terminals
TSLP-6-4-PO V01
Figure 3: Package Outline
NSMD
0.4
0.4
0.25
0.25
0.4
0.4
0.25
0.25
(stencil thickness 100 µm)
Copper
Stencil apertures
Solder mask
TSLP-6-4-FP V01
Figure 4: Footprint
Figure 5: Pin 1 Marking (top view)
Data Sheet
13
Revision 2.4 - 2014-05-27
BGS12PL6
1.25
Pin 1
marking
8
0.4
2
0.85
TSLP-6-4-TP V01
Figure 6: Tape Drawing for TSLP-6-4
Data Sheet
14
Revision 2.4 - 2014-05-27
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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