BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.4, 2014-05-27 Power Management & Multimarket Edition May 27, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGS12PL6 Revision History Document No.: BGS12PL6.pdf Previous Version: v2.3, April 01, 2014 Page Subjects (major changes since last revision) 10 Updated Temperature range (Table 6) Trademarks of Infineon Technologies AG AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM ,CoolGaNTM ,CoolMOSTM , CoolSETTM , CoolSiCTM , CORECONTROLTM , DAVETM , DI-POLTM ,EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM , eupecTM , FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , I2 RFTM , IsoPACKTM , MIPAQTM , ModSTACKTM , my-dTM , NovalithICTM , OmniTuneTM , OptiMOSTM , ORIGATM , OPTIGATM , PROFETTM , PRO-SILTM , PRIMARIONTM , PrimePACKTM , RASICTM , ReverSaveTM , SatRICTM , SIEGETTM , SIPMOSTM , SOLID FLASHTM , SmartLEWISTM , TEMPFETTM , thinQ!TM , TriCoreTM , TRENCHSTOPTM . Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , PRIMECELLTM , REALVIEWTM , THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM , FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2012-12-13 Data Sheet 3 Revision 2.4 - 2014-05-27 BGS12PL6 Contents 1 Features 7 2 Product Description 7 3 Maximum Ratings 9 4 Operation Ranges 9 5 RF Characteristics 10 6 Pin Description 12 7 Package Information 12 Data Sheet 4 Revision 2.4 - 2014-05-27 BGS12PL6 List of Figures 1 2 3 4 5 6 BGS12PL6 Block Diagram . Pin Configuration . . . . . . Package Outline . . . . . . Footprint . . . . . . . . . . . Pin 1 Marking (top view) . . Tape Drawing for TSLP-6-4 Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 13 13 13 14 Revision 2.4 - 2014-05-27 BGS12PL6 List of Tables 1 2 3 4 5 6 7 8 Ordering Information Truth Table . . . . . Maximum Ratings . Operation Ranges . RF Input Power . . . RF Characteristics . Pin Description . . . Mechanical Data . . Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 9 9 9 10 12 12 Revision 2.4 - 2014-05-27 BGS12PL6 BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint 1 Features • 2 high-linearity TRx paths with power handling capability of up to 35 dBm • All ports fully symmetrical • Low insertion loss • Low harmonic generation • High port-to-port isolation • 0.1 to 4 GHz coverage • High ESD robustness • On-chip control logic • Very small leadless and halogen free package TSLP-6-4 (0.7x1.1mm2 ) with super low height of 0.31 mm • No decoupling capacitors required if no DC applied on RF lines • RoHS compliant package 2 Product Description The BGS12PL6 general purpose RF MOS power switch is designed to cover a broad range of high power applications from 30 MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration, as shown in Figure 1 offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 35 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1 GHz, 0.46 dB in the 2 GHz and 0.6 dB in the 3 GHz range. The BGS12PL6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7x 1.1mm2 and a low height of 0.31mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port. Table 1: Ordering Information Type Package Marking BGS12PL6 TSLP-6-4 P Data Sheet 7 Revision 2.4 - 2014-05-27 BGS12PL6 RFin RF1 RF2 GND Decoder +ESD Vdd Ctrl Figure 1: BGS12PL6 Block Diagram Table 2: Truth Table Switched Paths Ctrl RFin - RF1 0 RFin - RF2 1 Data Sheet 8 Revision 2.4 - 2014-05-27 BGS12PL6 3 Maximum Ratings Table 3: Maximum Ratings at TA = 25 ◦ C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply Voltage Vdd -0.5 – 5.5 V – Control Voltage VCtrl -0.3 – 3.6 V – Storage Temperature Range TSTG -55 – 150 ◦ – RF Input Power at all RF Ports PRF – – 36 Junction Temperature C dBm CW Tj – – 125 ◦ C – VESD_HBM −1 – +1 kV – VESD_RFin −8 – +8 kV RFin versus GND, with ESD Capability Human Body Model 1) ESD Capability RFin Port 2) 27 nH shunt inductor 1) 2) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 kΩ, C = 100 pF). IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 4 Operation Ranges Table 4: Operation Ranges Parameter Symbol Values Unit Min. Typ. Max. Ambient Temperature TA -40 25 85 RF Frequency f 0.1 – Supply Voltage Vdd 2.4 Control Voltage Low VCtrl_L -0.3 Control Voltage High VCtrl_H 1.4 ◦ Note / Test Condition C – 4 GHz – – 3.6 V – – 0.3 V – – Vdd V – Table 5: RF Input Power Parameter RF Input Power (50Ω) Data Sheet Symbol PIn Values Min. Typ. Max. – – 35 9 Unit Note / Test Condition dBm – Revision 2.4 - 2014-05-27 BGS12PL6 5 RF Characteristics Table 6: RF Characteristics Test Conditions (unless otherwise specified): • Terminating port impedance: Z0 = 50 Ω • Temperature range: TA = -40 ... +85 ◦ C • Supply voltage: Vdd = 2.4 ... 3.6 V • Input power: PIN = 0 dBm Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 0.27 0.36 0.55 dB 699-915 MHz 0.36 0.46 0.70 dB 1710-1910 MHz 0.46 0.56 0.85 dB 2170-2690 MHz 0.61 0.77 1.15 dB 3800 MHz 0.33 0.40 0.36 0.46 0.40 0.50 dB dB 699-915 MHz 1710-1910 MHz 0.52 0.56 0.65 dB 2170-2690 MHz 0.65 0.77 0.90 dB 3800 MHz 20 25 35 dB 699-915 MHz 16 20 28 dB 1710-1910 MHz 14 18 27 dB 2170-2690 MHz 12 15 20 dB 3800 MHz 34 37 – dB 699-915 MHz ISORFin−RFx 27 30 – dB 1710-1910 MHz 23 27 – dB 2170-2690 MHz 19 22 – dB 3800 MHz 45 50 – dB 699-915 MHz 34 36 – dB 1710-1910 MHz 28 31 – dB 2170-2690 MHz 24 27 – dB 3800 MHz – 38 – dBm 699 - 2700 MHz Insertion Loss IL All RF Ports 1 Insertion Loss All RF Ports IL Return Loss All RF Ports RL Isolation RFin to RF1/RF2 Port RF1 to RF2 Port ISOPort−Port P0.1 dB Compression Point All RF Ports 1 P0.1dB TA = +25 ◦ C, Vdd = 3 V Data Sheet 10 Revision 2.4 - 2014-05-27 BGS12PL6 Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. -90 -80 -70 dBc f = 824 MHz, Pin = 27.5 dBm, -100 -90 -80 dBc 50Ω, 50 % duty cycle 1 Harmonic Generation up to 12.75 GHz All RF Ports, 2nd Harmonic rd All RF Ports, 3 Harmonic PHarm 1,2 Intermodulation Distortion in Rx Band IMD2, Low IMD2Low – -110 -100 dBm IMD3 IMD3 – -110 -100 dBm IMD2, High IMD2High – -110 -100 dBm Tx = 15 dBm, Interferer = -15 dBm, 50Ω Switching Time and Current Consumption RF Rise Time t10%−90% – 0.55 1.5 µs 10% - 90% of RF Signal Ctrl to RF Time tCtrl−RF – 1.4 3 µs 50% of Ctrl Signal to 90% of Supply Current Idd 80 200 350 µA – Control Current ICtrl – 1 10 µA – RF Signal Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads. 1 TA = +25 ◦ C, Vdd = 3 V 2 With external shunt L Data Sheet 11 Revision 2.4 - 2014-05-27 BGS12PL6 6 Pin Description Vdd 4 3 RF1 RFIN 5 2 GND CTRL 6 1 RF2 Figure 2: Pin Configuration Table 7: Pin Description Pin No. Name Pin Buffer Type Type Function 1 RF2 I/O RF Port 2 2 GND GND Ground 3 RF1 I/O RF Port 1 4 Vdd PWR Supply Voltage 5 RFIN I/O RF Port In 6 CTRL I Control Pin 7 Package Information Table 8: Mechanical Data Parameter Symbol Value Unit X-Dimension X 0.7 ± 0.05 mm Y-Dimension Y 1.1 ± 0.05 mm Size Size 0.77 mm2 Height H 0.31+0.01/−0.02 mm Data Sheet 12 Revision 2.4 - 2014-05-27 BGS12PL6 Top view Bottom view (0.05) 3 2 1.1 ±0.05 4 5 1 6 (0.05) 0.2 ±0.035 1) 0.05 MAX. 0.4 0.2 ±0.035 1) (0.05) (0.05) 0.7 ±0.05 +0.01 0.31 -0.02 0.4 Pin 1 marking 1) Dimension applies to plated terminals TSLP-6-4-PO V01 Figure 3: Package Outline NSMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSLP-6-4-FP V01 Figure 4: Footprint Figure 5: Pin 1 Marking (top view) Data Sheet 13 Revision 2.4 - 2014-05-27 BGS12PL6 1.25 Pin 1 marking 8 0.4 2 0.85 TSLP-6-4-TP V01 Figure 6: Tape Drawing for TSLP-6-4 Data Sheet 14 Revision 2.4 - 2014-05-27 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG