BGS14AN16 Data Sheet (2.3 MB, EN)

BGS14AN16
RF SP4T Switch
Data Sheet
Revision 1.0, 2012-12-17
Power Management & Multimarket
Edition December 17, 2012
Published by
Infineon Technologies AG
81726 Munich, Germany
c
2011
Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGS14AN16
Confidential
Revision History
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Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks,
Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MifareTM of
NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO.,
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YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI
KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of
Texas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex
Limited.
Last Trademarks Update 2010-06-09
Data Sheet
3
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
Contents
Contents
1 Features
7
2 Product Description
7
3 Maximum ratings
9
4 Operation Ranges
9
5 RF Characteristics
10
6 Pin Configuration and Package Outline
12
Data Sheet
4
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
List of Figures
List of Figures
1
2
3
4
5
6
BGS14AN16 Block Diagram . .
Pin Configuration . . . . . . . .
Package Outline . . . . . . . .
Pin Marking . . . . . . . . . . .
Land Pattern and Stencil Mask
Tape Drawing for TSNP-16-6 .
Data Sheet
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Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
List of Tables
List of Tables
1
2
3
4
5
6
7
Ordering Information
Truth Table . . . . .
Maximum Ratings .
ESD Ratings . . . .
Operation Ranges .
RF Characteristics .
Pin Description . . .
Data Sheet
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12
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
BGS14AN16 RF SP4T Switch
1 Features
• 4 high-linearity Rx paths with power handling capability of up
to 30 dBm
• All Ports fully symmetrical
• No external decoupling components required
• High ESD robustness
• Low harmonic generation
• Low insertion loss
• High port-to-port-isolation
• 0.1 to 3 GHz coverage
• Direct connect to battery
• Power down mode
• On-chip control logic supporting logic levels from 1.5 V to Vdd
• Lead and halogen free package (RoHS and WEEE compliant)
• Small leadless package TSNP-16-6 with a size of 2.3 x 2.3
mm2 and a maximum height of 0.77 mm.
Applications
• CDMA/WCDMA Diversity
• Analog and Digital Tuner
• Band Switching
• LTE
2 Product Description
The BGS14AN16 RF MOS switch is specifically designed for WCDMA diversity applications. Any of the 4 ports can
be used as termination of the diversity antenna handling up to 30 dBm.
This SP4T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode.
An integrated LDO allows to connect Vdd directly to battery, hence no regulated supply voltage is required. A power
down mode is implemented to avoid current drain when the device is not in use.
The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.5 V to Vdd . Unlike
GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally.
The BGS14AN16 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of
GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
The device has a very small size of only 2.3 x 2.3 mm2 and a maximum height of 0.77 mm.
Table 1: Ordering Information
Product Name
Product Type
Package
Marking
BGS14AN16
SP4T RF Switch
PG-TSNP-16-6
14A
Data Sheet
7
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
ANT
BGS14AN16
RF1
RF2
RF3
RF4
SP4T
DGND
V1
V2
V3
VDD
Decoder + ESD
Protection
Figure 1: BGS14AN16 Block Diagram
Table 2: Truth Table
Function
V1
V2
V3
Ant → RF1
1
0
0
Ant → RF2
0
1
0
Ant → RF3
0
0
1
Ant → RF4
1
0
1
Power Down Mode
0
0
0
All Off
1
1
0
All Off
0
1
1
Data Sheet
8
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
3 Maximum ratings
Table 3: Maximum Ratings at TA = 25 ◦ C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
Storage Temperature Range
TSTG
-55
–
150
◦
DC Voltage on Vdd Pin to GND
VDD
–
–
5.5
V
–
DC Voltage on All Other Pins to GND
VDC
–
–
3.6
V
–
Max, RF Power at Antenna Port, Any
RF Port On
PAntI nM ax
–
–
+32
dBm
50Ω
Max, Input (Reverse) Power at An-
PRevI nM ax
–
–
+30
dBm
50 % Duty Cycle, 50Ω
C
–
tenna Pin
Attention:
Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 4: ESD Ratings
Parameter
Symbol
ESD HBM, All Ports
VESD_HBM
Values
Min.
Typ.
Max.
1000
–
–
Unit
Note / Test Condition
V
All GND Ports
Connected
ESD CDM, All Ports
VESD_CDM
2000
–
–
V
–
ESD MM, All Ports
VESD_MM
100
–
–
V
–
VESD_Ant
8000
–
–
V
With external 27nH
ESD
Robustness
IEC-61000-4-2,
antenna port
Inductor
4 Operation Ranges
Table 5: Operation Ranges
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Ambient Temperature
TA
-30
25
85
RF Frequency
f
0.1
–
Control Voltage Low
VCtrl_L
-0.3
Control Voltage High
VCtrl_H
1.5
Supply Voltage
VDD
2.85
Data Sheet
◦
Note / Test Condition
C
–
3
GHz
–
–
0.3
V
–
–
VDD
V
VDD < 3.3 V
–
4.7
V
–
9
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
5 RF Characteristics
Table 6: RF Characteristics
Test Conditions (unless otherwise specified):
•
•
•
•
•
•
Terminating Port Impedance: Z0 = 50 Ω
Temperature Range: TA = -30 ... +85 ◦ C
Supply Voltage: VDD = 2.85 − 4.7 V
Input Power: PIN = 0 dBm
Across Operating Range of Control Voltages: VCtrl_H = 1.5...3.5 V
Measured Using External Circuitry Acording Application Note AN259
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
–
0.341
0.49
dB
–
1710 - 1980 MHz
–
1
0.55
0.75
dB
RF1
1710 - 1980 MHz
–
0.501
0.70
dB
RF2, RF3, RF4
–
1
0.79
dB
RF1
1
0.75
dB
RF2, RF3, RF4
1
Insertion Loss
824 - 960 MHz
1980 - 2170 MHz
1980 - 2170 MHz
IL
–
0.59
0.55
2170 - 2690 MHz
–
0.69
0.89
dB
RF1
2170 - 2690 MHz
–
0.651
0.85
dB
RF2, RF3, RF4
Inband Ripple Rx Ports (High Bands)
–
0.05
0.10
dB
–
Inband Ripple Rx Ports (Low Bands)
–
0.03
0.10
dB
–
25
30
–
dB
–
14
20
–
dB
–
35
40
–
dB
–
26
30
–
dB
–
24
30
–
dB
–
24
27
–
dB
–
32
35
–
dB
–
26
28
–
dB
–
25
28
–
dB
–
21
25
–
dB
–
40
30
–
dB
–
20
20
–
dB
–
Return Loss
1)
All Ports @ 824 - 915 MHz
All Ports @ 1710 - 2690 MHz
RL
Isolation Ant - RF1,2,3,4
824 - 915 MHz
1710 - 1980 MHz
1980 - 2170 MHz
ISO
2170 - 2690 MHz
Isolation RF1,2,3 - RF1,2,3,4
824 - 915 MHz
1710 - 1980 MHz
1980 - 2170 MHz
ISO
2170 - 2690 MHz
Isolation RF Ports - VDD , VCtrl
900 MHz
2000 MHz
ISO
Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads.
1)
TA = +25 ◦ C, VDD = 3.5 V
Data Sheet
10
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
–
-110
-104
dB
–
–
-110
-104
dB
–
–
-110
-104
dB
–
–
-110
-104
dB
–
–
–
–
–
-46
-46
dB
dB
–
–
–
-50
-42
dB
–
–
-50
-44
dB
–
–
-50
-44
dB
–
Input Intercept Point Requirements - IMD21)
Tx = [email protected], Int = [email protected]
(Tx Freq = 824 - 915 MHz)
PIMD2
Tx = [email protected], Int = [email protected]
(Tx Freq = 1710 - 1980 MHz)
Input Intercept Point Requirements - IMD31)
Tx = [email protected], Int = [email protected]
(Tx Freq = 824 - 915 MHz)
PIMD3
Tx = [email protected], Int = [email protected]
(Tx Freq = 1710 - 1980 MHz)
Harmonic Generation RF Ports Up to 12.75 GHz1)
824 - 960 MHz
1920 - 1980 MHz
PHarm
Harmonic Generation RF Ports Up to 12.75 GHz1)
824 - 960 MHz, Third Harmonic
824 - 960 MHz, All Other Harmonics
PHarm
Up to 12.75 GHz
1920 - 1980 MHz
Intermodulation Distortion in Rx Band1)
IMD2_Low
PIMD2_L
-125
-115
-110
dBm
–
IMD3
PIMD3
-125
-115
-110
dBm
–
IMD2_High
PIMD2_H
-125
-115
-110
dBm
–
Switching Time and Current Consumption
On/Off Switching Time (10-90%) RF
t10%−90%
0.3
1
3
µs
–
Boost Converter Settling Time
tBoost
–
10
25
µs
After Power
Down Mode
Current Consumption at VDD Pin
IDD
50
75
100
µA
–
Current Consumption at VCtrl Pin
ICtrl
0.1
1
30
µA
–
Current Consumption at Power Down
IPD
–
–
1
µA
–
Mode
Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads.
1)
TA = +25 ◦ C, VDD = 3.5 V
Data Sheet
11
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
V2
ANT
13
DGND
V3
VDD
6 Pin Configuration and Package Outline
12
11
10
14
8
RF1
V1
15
7
GND
GND
16
6
RF2
N/C
1
5
GND
3
4
RF3
2
GND
GND
RF4
9
Figure 2: Pin Configuration
Table 7: Pin Description
Pin No.
Name
Pin Type
Buffer Type
Function
1
N/C
–
–
Not Connected
2
RF4
I/O
–
RF Port 4
3
GND
GND
–
Ground
4
RF3
I/O
–
RF Port 3
5
GND
GND
–
Ground
6
RF2
I/O
–
RF Port 2
7
GND
GND
–
Ground
8
RF1
I/O
–
RF Port 1
9
GND
GND
–
Ground
10
ANT
I/O
–
Antenna Port
11
DGND
GND
–
Ground
12
VDD
PWR
–
Vdd Supply
13
V3
I
–
Control Pin 3
14
V2
I
–
Control Pin 2
15
V1
I
–
Control Pin 1
16
GND
GND
–
Ground
Data Sheet
12
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
Top view
Bottom view
2.3 ±0.05 1)
0.73 +0.04
-0.03
2 ±0.035
0.02 MAX.
16
2.3 ±0.05
16 x 0.2 ±0.035
0.2 x 45°
1.4 ±0.035
1±0.05
1.4 ±0.005
2 ±0.035
1±0.05
1
16 x 0.2 ±0.035
1) Dimension applies to plated terminals
TSNP-16-6-PO V01
Figure 3: Package Outline
123456
Type code
Date code
(YYWW)
Pin 1 marking
Figure 4: Pin Marking
Data Sheet
13
Revision 1.0 - December 17, 2012
BGS14AN16
Confidential
0.2
0.3
0.3
0.2
0.3
Copper
0.55
1.25
2.3
2.3
0.3
0.2
0.3
0.3
0.2
0.3
0.2
0.3
0.2
0.3
0.2
0.3
0.2
Stencil apertures
Solder mask
SMD - V1
SMD - V2
0.35
0.225
0.3
0.2
0.3
0.3
0.2
0.3
Copper
0.15
0.15
2.3
0.55
2.3
0.55
1.25
0.35
0.225
0.075
0.275
0.225
1.25
0.225
0.2
0.3
0.3
0.2
0.3
0.2
Solder mask
0.3
0.3
0.2
0.2
0.3
0.2
Vias top to first inner layer
Figure 5: Land Pattern and Stencil Mask
Pin 1
marking
8
2.7
4
2.7
Figure 6: Tape Drawing for TSNP-16-6
Data Sheet
14
Revision 1.0 - December 17, 2012
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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