BGS22WL10 Data Sheet (1.8 MB, EN)

BGS22WL10
DPDT (Dual-Pole / Double-Throw) Differential RF Switch
Data Sheet
Revision 1.6 - May 27, 2014
Power Management & Multimarket
Edition May 27, 2014
Published by
Infineon Technologies AG
81726 Munich, Germany
c
2011
Infineon Technologies AG
All Rights Reserved.
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BGS22WL10
Revision History
Previous Version: v1.5, February 13, 2014
Page
Subjects (major changes since last revision)
10
Updated parameter TA for Insertion and Return Loss (Table 6)
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Last Trademarks Update 2010-06-09
Data Sheet
3
Revision 1.6 - May 27, 2014
BGS22WL10
Contents
1 Features
7
2 Product Description
7
3 Maximum Ratings
9
4 Operation Ranges
9
5 RF Characteristics
10
6 Package Outline and Pin Configuration
11
Data Sheet
4
Revision 1.6 - May 27, 2014
BGS22WL10
List of Figures
1
2
3
4
5
BGS22WL10 block diagram . . . . . . . . . . . . . . . .
Marking Layout (top view) . . . . . . . . . . . . . . . . .
TSLP-10-1 Package Outline (top, side and bottom view)
Footprint TSLP-10-1 . . . . . . . . . . . . . . . . . . . .
Tape and Reel Dimensions for TSLP-10-1 . . . . . . . .
Data Sheet
5
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Revision 1.6 - May 27, 2014
BGS22WL10
List of Tables
1
2
3
4
5
6
7
8
Ordering Information
Truth Table . . . . .
Maximum Ratings .
Operation Ranges .
RF Input Power . . .
RF Characteristics .
Pin Configuration . .
Mechanical Data . .
Data Sheet
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Revision 1.6 - May 27, 2014
BGS22WL10
BGS22WL10 DPDT (Dual-Pole / Double-Throw) Differential RF Switch
1 Features
• DPDT (Dual-Pole / Double-Throw) differential RF switch
• Frequency range: 0.1 - 3 GHz
• High signal power up to 30 dBm
• Supply voltage 2.3 - 3.6 V
• Small package size of 1.55 x 1.15 mm2
• No decoupling capacitors required if no DC applied
• RoHS compliant package
2 Product Description
The BGS22WL10 is a DPDT (Dual-Pole / Double Throw) RF switch which combines two differential signals into
one differential output or splits one differential signal into two separate differential lines. The parallel paths of the
switch are controlled simultaneously through the same signals. The switch is designed to operate in battery powered
applications with a supply voltage range of 2.4 - 3.6 V . The highly symmetric design ensures best phase- and
amplitude accuracy.
A typical application is to combine two Rx paths in a mobile cellular device after the Rx filters or duplexers into one
input to the tranceiver IC. The IC can also be used for a wide variety of applications switching balanced signals in a
frequency range of 0.1 - 3 GHz. The RF switch is packaged in a standard RoHS compliant TSLP-10-1 package with
a small outline of only 1.55 x 1.15 mm2 .
No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.
Table 1: Ordering Information
Type
Package
Marking
BGS22WL10
TSLP-10-1
22W
Data Sheet
7
Revision 1.6 - May 27, 2014
BGS22WL10
BGS22WL10
Port 2P
Port 1P
Port 3P
Port 2N
Port 1N
Port 3N
DPDT
VDD
CTRL
ESD Protection
Figure 1: BGS22WL10 block diagram
Table 2: Truth Table
Pin No.
CRTL
Port 1 to Port 2
0
Port 1 to Port 3
1
Data Sheet
8
Revision 1.6 - May 27, 2014
BGS22WL10
3 Maximum Ratings
Table 3: Maximum Ratings at TA = 25 ◦ C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Supply voltage
VDD
-0.5
–
5.5
V
–
Control voltage
VCtrl
-0.3
–
3.6
V
–
◦
C
–
Storage temperature range
TSTG
-55
–
150
RF input power
PIn
–
–
+32
dBm
–
ESD capability Human Body Model
VESD_HBM
1000
–
–
V
–
◦
C
–
K/W
–
Junction temperature
Tj
–
–
125
Thermal resistance junction - soldering point
RthJS
–
–
tbd
Attention:
Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply Voltage
VDD
2.3
–
3.6
V
–
Control Voltage Low
VCtrl_L
-0.3
–
0.4
V
–
Control Voltage High
VCtrl_H
1.2
–
VDD
V
–
RF frequency
fRF
0.1
–
–
GHz
–
85
◦
–
Ambient Temperature
TA
-40
25
C
Table 5: RF Input Power
Parameter
RF Input Power (50Ω)
Data Sheet
Symbol
PIn
Values
Min.
Typ.
Max.
–
–
30
9
Unit
Note / Test Condition
dBm
–
Revision 1.6 - May 27, 2014
BGS22WL10
5 RF Characteristics
Table 6: RF Characteristics:
Terminating port impedance: Z0 = 50 Ω
Measurement conditions unless otherwise specified:
TA = 25 ◦ C, PIN = 0 dBm, Supply Voltage VDD = 2.3 − 3.6 V
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
◦
Insertion Loss - Typical Conditions: TA = 25 C, VDD = 3 V
IL
0.30
0.34
0.39
dB
824 - 915 MHz
0.37
0.40
0.46
dB
1710 - 1910 MHz
0.43
0.48
0.59
dB
2170 - 2690 MHz
◦
Insertion Loss - Min/Max Conditions: TA = -40 ... +85 C, VDD = 2.3 ... 3.6 V
IL
0.23
0.27
0.34
0.40
0.54
0.58
dB
dB
824 - 915 MHz
1710 - 1910 MHz
0.31
0.48
0.75
dB
2170 - 2690 MHz
◦
Return Loss - Min/Max Conditions: TA = -40 ... +85 C, VDD = 2.3 ... 3.6 V
RL
25
27
35
dB
824 - 915 MHz
22
26
30
dB
1710 - 1910 MHz
16
22
25
dB
2170 - 2690 MHz
32
38
44
dB
824 - 915 MHz
25
30
37
dB
1710 - 1910 MHz
22
28
33
dB
2170 - 2690 MHz
33
34
35
dBm
1000 MHz
85
95
dBc
27 dBm, 50Ω, 25 ◦ C, 25 % duty cy-
1
Isolation
ISO
P0.1 dB Compression Point
P0.1dB
Harmonic Generation up to 12.75 GHz
Any path
PHarm
80
cle
Intermodulation Distortion in Rx Band
IMD2_Low2
PIMD2_L
-125
-115
-105
dBm
Tx = 15 dBm, Interferer = -15 dBm
IMD3
PIMD3
-125
-115
-110
dBm
Tx = 10 dBm, Interferer = -15 dBm
IMD2_High
PIMD2_H
-125
-115
-110
dBm
Tx = 10 dBm, Interferer = -15 dBm
Switching Time and Current Consumption
RF Rise Time
t10%−90%
–
250
–
ns
10% - 90% of RF Signal (VDD = 3 V )
Ctrl to RF Time
tCtrl−RF
–
600
–
ns
50% of Ctrl Signal to 90% of RF
Signal (VDD = 3 V )
Supply Current
IDD
70
120
190
µA
Current at TA = 25 ◦ C
PhErr
0.3
0.5
0.7
Deg.
27 dBm, 50Ω, 25 ◦ C, 25 % duty cy-
Phase Error
Between
any
two paths
cle
Note: All electrical characteristics are measured with all RF ports terminated in 50 Ω.
Isolation values are not dependent on supply voltage and temperature as long as operated in the specified operation range.
2
With external shunt inductor.
1
Data Sheet
10
Revision 1.6 - May 27, 2014
BGS22WL10
6 Package Outline and Pin Configuration
22W
PIN1 Marking
Lasered
Date Code
YYWW
Type
Figure 2: Marking Layout (top view)
Table 7: Pin Configuration
Pin
Name
No.
Pin
Buffer
Type
Type
Function
1
Port 3P
Differential Output P of Port 3
2
GND
Ground Pin
3
GND
Ground Pin
4
Port 2N
Differential Output N of Port 2
5
Port 2P
Differential Output P of Port 2
6
CTRL
Control Voltage
7
Port 1P
Differential Input P of Port 1
8
Port 1N
Differential Input N of Port 1
9
VDD
Supply Voltage
10
Port 3N
Differential Output N of Port 3
Data Sheet
11
Revision 1.6 - May 27, 2014
BGS22WL10
Table 8: Mechanical Data
Parameter
Symbol
Value
Unit
Package X-Dimension
X
1.55 ± 0.05
mm
Package Y-Dimension
Y
1.15 ± 0.05
mm
Package Area
A
1.783
mm2
Package Height
H
0.39 +0.01/-0.03
mm
Top view
Bottom view
0.39 +0.01
-0.03
1.15 ±0.05
0.2 ±0.05
0.05 MAX.
6
3
7
2
8
1
9
0.2 ±0.0351)
Pin 1 marking
1) Dimension applies to plated terminals
1.55 ±0.05
4
0.2 ±0.0351)
0.2 ±0.05
5
10
TSLP-10-1-PO V01
Figure 3: TSLP-10-1 Package Outline (top, side and bottom view)
Data Sheet
12
Revision 1.6 - May 27, 2014
BGS22WL10
NSMD
0.25
0.4
0.4
0.25
0.25
0.4
0.4
Copper
(stencil thickness 100 µm)
Stencil apertures
Solder mask
TSLP-10-1-FP V01
Figure 4: Footprint TSLP-10-1
0.5
Pin 1
marking
8
1.85
4
1.45
TSLP-10-1-TP V01
Figure 5: Tape and Reel Dimensions for TSLP-10-1
Data Sheet
13
Revision 1.6 - May 27, 2014
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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