BFP450 Data Sheet (1.5 MB, EN)

BFP450
Linear Low Noise Silicon Bipolar RF Transistor
Datasheet
Revision 1.2, 2013-07-29
RF & Protection Devices
Edition 2013-07-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP450
BFP450, Linear Low Noise Silicon Bipolar RF Transistor
Revision History: 2013-07-29, Revision 1.2
Page
Subjects (changes since previous revision)
This datasheet replaces the revision from 2012-09-11.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet have been expanded
and updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Datasheet
3
Revision 1.2, 2013-07-29
BFP450
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Datasheet
4
11
11
11
12
16
19
Revision 1.2, 2013-07-29
BFP450
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Datasheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP450 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 3 V, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 90 mA, = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Input Matching S11 = f (f), VCE = 3 V, IC = 50 / 90 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . .
Output Matching S22 = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . .
Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP450: ANs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
16
16
17
17
18
19
19
20
20
21
21
22
22
23
23
24
24
25
27
27
27
27
Revision 1.2, 2013-07-29
BFP450
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Datasheet
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision 1.2, 2013-07-29
BFP450
Product Brief
1
Product Brief
The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to
VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports
energy efficient designs. The typical transition frequency is approximately 24 GHz, hence the device offers high
power gain at frequencies up to 3 GHz in amplifier applications. The device is housed in an easy to use plastic
package with visible leads.
Datasheet
7
Revision 1.2, 2013-07-29
BFP450
Features
2
•
•
•
•
•
•
•
•
Features
Highly linear low noise driver amplifier for all RF frontends up to
3 GHz
Based on Infineon´s reliable high volume 25 GHz silicon bipolar
technology
Output compression point OP1dB = 19 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Output 3rd order intermodulation point OIP3 = 31 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
Pb-free (RoHS compliant) and halogen-free package with
visible leads
Qualification report according to AEC-Q101 available
3
2
4
1
Applications Examples
Driver amplifier
•
•
•
ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA
Transmitter driver amplifier
•
2.4 GHz WLAN and Bluetooth
Output stage LNA for active antennas
•
TV, GPS, SDARS, 2.4 GHz WLAN, etc
Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFP450
SOT343
Datasheet
Pin Configuration
1=B
2=E
8
3=C
Marking
4=E
ANs
Revision 1.2, 2013-07-29
BFP450
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings
Parameter
Symbol
Values
Unit
Min.
Collector emitter voltage
Note / Test Condition
Max.
Open base
VCEO
–
4.5
V
TA = 25 °C
–
4.1
V
TA = -55 °C
Collector emitter voltage
VCES
–
15
V
E-B short circuited
Collector base voltage
VCBO
–
15
V
Open emitter
Emitter base voltage
VEBO
–
1.5
V
Open collector
Collector current
IC
–
170
mA
–
IB
–
10
mA
–
Ptot
–
500
mW
TS ≤ 90 °C
TJ
–
150
°C
–
Base current
Total power dissipation
Junction temperature
1)
Storage temperature
TStg
-55
150
°C
–
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Datasheet
9
Revision 1.2, 2013-07-29
BFP450
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
120
–
K/W
–
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
600
500
Ptot [mW]
400
300
200
100
0
0
50
100
150
Ts [°C]
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Datasheet
10
Revision 1.2, 2013-07-29
BFP450
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage
V(BR)CEO
Values
Min.
Typ.
Max.
4.5
5
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
Collector emitter leakage current
ICES
–
–
–
1
1
1)
30
1)
30
1)
μA
VCE = 15 V, VBE = 0
nA
VCE = 3 V, VBE = 0
E-B short circuited
Collector base leakage current
ICBO
–
1
nA
VCB = 3 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
0.05
31)
μA
VEB = 0.5 V, IC = 0
Open collector
DC current gain
hFE
60
95
130
VCE = 4 V, IC = 50 mA
50
85
120
VCE = 3 V, IC = 90 mA
Pulse measured
1) Maximum values not limited by the device but the short cycle time of the 100% test
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Transition frequency
Symbol
fT
Values
Min.
Typ.
Max.
18
24
–
Unit
Note / Test Condition
GHz
VCE = 3 V, IC = 90 mA,
f = 1 GHz
Collector base capacitance
CCB
–
0.48
0.8
pF
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
1.2
–
pF
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
1.7
–
pF
VEB = 0.5 V, VCB = 0 V
f = 1 MHz
Collector grounded
Datasheet
11
Revision 1.2, 2013-07-29
BFP450
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 5-1 BFP450 Testing Circuit
Table 5-3
AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
34.5
–
IC = 50 mA
Class A operation point
Gms
–
35.5
–
IC = 90 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
33
–
IC = 50 mA
Class A operation point
S21
–
33.5
–
IC = 90 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.55
–
IC = 50 mA
Associated gain
Gass
–
32
–
IC = 50 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
19
–
IC = 90 mA
3rd order intercept point
OIP3
–
30.5
–
IC = 90 mA
Datasheet
12
Revision 1.2, 2013-07-29
BFP450
Electrical Characteristics
Table 5-4
AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
28.5
–
IC = 50 mA
Class A operation point
Gms
–
29
–
IC = 90 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
25
–
IC = 50 mA
Class A operation point
S21
–
25
–
IC = 90 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.55
–
IC = 50 mA
Associated gain
Gass
–
27.5
–
IC = 50 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
19
–
IC = 90 mA
3rd order intercept point
OIP3
–
30
–
IC = 90 mA
Table 5-5
AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
23
–
IC = 50 mA
Class A operation point
Gms
–
23.5
–
IC = 90 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
18.5
–
IC = 50 mA
Class A operation point
S21
–
19
–
IC = 90 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.6
–
IC = 50 mA
Associated gain
Gass
–
23
–
IC = 50 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
19
–
IC = 90 mA
3rd order intercept point
OIP3
–
30.5
–
IC = 90 mA
Datasheet
13
Revision 1.2, 2013-07-29
BFP450
Electrical Characteristics
Table 5-6
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gma
–
18
–
IC = 50 mA
Class A operation point
Gma
–
18
–
IC = 90 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
14
–
IC = 50 mA
Class A operation point
S21
–
14
–
IC = 90 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.65
–
IC = 50 mA
Associated gain
Gass
–
17
–
IC = 50 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
19
–
IC = 90 mA
3rd order intercept point
OIP3
–
31
–
IC = 90 mA
Table 5-7
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gma
–
15.5
–
IC = 50 mA
Class A operation point
Gma
–
15.5
–
IC = 90 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
9.5
11.5
–
IC = 50 mA
Class A operation point
S21
–
11.5
–
IC = 90 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.7
–
IC = 50 mA
Associated gain
Gass
–
14
–
IC = 50 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
19
–
IC = 90 mA
3rd order intercept point
OIP3
–
31
–
IC = 90 mA
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BFP450
Electrical Characteristics
Table 5-8
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gma
–
13.5
–
IC = 50 mA
Class A operation point
Gma
–
13.5
–
IC = 90 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
9.5
–
IC = 50 mA
Class A operation point
S21
–
9.5
–
IC = 90 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.8
–
IC = 50 mA
Associated gain
Gass
–
12
–
IC = 50 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
19
–
IC = 90 mA
3rd order intercept point
OIP3
–
30
–
IC = 90 mA
Table 5-9
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gma
–
10
–
IC = 50 mA
Class A operation point
Gma
–
10
–
IC = 90 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
5.5
–
IC = 50 mA
Class A operation point
S21
–
6
–
IC = 90 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
2.05
–
IC = 50 mA
Associated gain
Gass
–
9
–
IC = 50 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
18.5
–
IC = 90 mA
3rd order intercept point
OIP3
–
29.5
–
IC = 90 mA
Notes
1. AC parameter limits verified by random sampling
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured result
3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Datasheet
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BFP450
Electrical Characteristics
5.4
Characteristic DC Diagrams
160
1.90mA
140
1.71mA
1.52mA
120
1.33mA
1.14mA
80
0.95mA
IC [mA]
100
0.76mA
60
0.57mA
40
0.38mA
20
0
0.19mA
0
1
2
3
4
5
VCE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA
120
110
100
hFE
90
80
70
60
50
0.1
1
10
100
1000
IC [mA]
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
Datasheet
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BFP450
Electrical Characteristics
1000
IC [mA]
100
10
1
0.1
0.01
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
10
IB [mA]
1
0.1
0.01
0.001
0.0001
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Datasheet
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BFP450
Electrical Characteristics
1.E-05
IB [A]
1.E-06
1.E-07
1.E-08
1.E-09
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
VEB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Datasheet
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BFP450
Electrical Characteristics
5.5
Characteristic AC Diagrams
30
25
4.00V
3.00V
2.00V
fT [GHz]
20
15
1.00V
10
5
0
0
20
40
60
80
100
I [mA]
120
140
160
180
160
180
C
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V
34
32
OIP3 [dBm]
30
28
3V, 0.9GHz
4V, 0.9GHz
3V, 1.9GHz
4V, 1.9GHz
26
24
22
20
18
0
20
40
60
80
100
IC [mA]
120
140
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
Datasheet
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BFP450
Electrical Characteristics
1.2
1
Ccb [pF]
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
V
CB
2.5
3
3.5
4
[V]
Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
42
39
36
33
30
Gms
G [dB]
27
24
21
G
ma
18
15
2
|S21|
12
9
6
3
0
0
0.5
1
1.5
2
2.5 3 3.5
f [GHz]
4
4.5
5
5.5
6
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA
Datasheet
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BFP450
Electrical Characteristics
39
0.15GHz
36
33
30
0.45GHz
27
G [dB]
24
0.90GHz
21
18
1.50GHz
1.90GHz
2.40GHz
15
12
3.50GHz
9
5.50GHz
6
3
0
0
20
40
60
80
100 120
IC [mA]
140
160
180
200
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, = Parameter in GHz
39
36
0.15GHz
33
30
0.45GHz
27
G [dB]
24
0.90GHz
21
1.50GHz
1.90GHz
2.40GHz
18
15
12
3.50GHz
9
5.50GHz
6
3
0
0.5
1
1.5
2
2.5
V
CE
3
[V]
3.5
4
4.5
5
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, = Parameter in GHz
Datasheet
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BFP450
Electrical Characteristics
1
1.5
0.5
6
8
7
9
2
10
5
0.4
4
3
0.3
3
0.2
4
5
2
0.03 to 10 GHz
0.1
10
1
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
90 mA
50 mA
−1
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 50 / 90 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45GHz
0.1
0
0.1
10
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0.9GHz
−0.1
−10
1.9GHz
−0.2 2.4GHz
I = 50mA
−5
−4
c
I = 90mA
−0.3
c
−3
−0.4
−0.5
−2
−1.5
−1
Figure 5-14 Source Impedance for Minimum Noise Figure = f (f), VCE = 3 V, IC = 50 / 90 mA
Datasheet
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BFP450
Electrical Characteristics
1
1.5
0.5
2
0.4
9
8
7
10
6
0.3
3
5
4
4
0.2
5
3
0.1
0.03 to 10 GHz
10
2
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
1
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
90 mA
50 mA
−1
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 50 / 90 mA
3
2.5
NFmin [dB]
2
1.5
IC = 90mA
I = 50mA
C
1
0.5
0
0
0.5
1
1.5
f [GHz]
2
2.5
3
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt
Datasheet
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BFP450
Electrical Characteristics
3
2.5
NFmin [dB]
2
1.5
f = 2.4GHz
f = 1.9GHz
1
f = 0.9GHz
f = 0.45GHz
0.5
0
0
20
40
60
80
100
Ic [mA]
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz
4.5
4
3.5
NF50 [dB]
3
2.5
f = 2.4GHz
f = 1.9GHz
2
f = 0.9GHz
1.5
f = 0.45GHz
1
0.5
0
20
40
60
80
100
I [mA]
c
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω= Parameter in GHz
Datasheet
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BFP450
Electrical Characteristics
4.5
4
3.5
NF [dB]
3
2.5
2
1.5
ZS = 50Ω
Z =Z
S
1
0.5
0
20
40
60
Sopt
80
100
Ic [mA]
Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Datasheet
25
Revision 1.2, 2013-07-29
BFP450
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP450 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP450 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself.
Datasheet
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BFP450
Package Information SOT343
7
Package Information SOT343
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
+0.1
0.6 -0.05
4x
0.1 M
0.2 M A
SOT343-PO V08
Figure 7-1 Package Outline
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
Figure 7-2 Package Footprint
Date code (YM)
2005, June
56
Type code
XYs
Manufacturer
Pin 1
Figure 7-3 Marking Description (Marking BFP450: ANs)
0.2
2.3
8
4
Pin 1
2.15
1.1
SOT323-TP V02
Figure 7-4 Tape Dimensions
Datasheet
27
Revision 1.2, 2013-07-29
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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