BFP650F Data Sheet (551 KB, EN)

BFP650F
Linear Low Noise SiGe:C Bipolar RF Transistor
• For medium power amplifiers and driver stages
3
• Based on Infineon' s reliable high volume Silicon
2
4
1
Germanium technology
• High OIP3 and P -1dB
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
Minimun noise figure NFmin = 0.8 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
Top View
4
3
XYs
1
2
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP650F
Marking
R5s
1=B
Pin Configuration
2=E
3=C
1
4=E
-
Package
-
TSFP-4
2013-09-06
BFP650F
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit
V
TA = 25 °C
4
TA =-55 °C
3.7
Collector-emitter voltage
VCES
13
Collector-base voltage
VCBO
13
Emitter-base voltage
VEBO
1.2
Collector current
IC
150
Base current
IB
10
Total power dissipation1)
Ptot
500
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
mA
TS ≤ 85°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
Unit
130
K/W
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)CEO
4
4.5
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
10
µA
hFE
110
180
270
-
DC Characteristics
Collector-emitter breakdown voltage
IC = 3 mA, I B = 0
Collector-emitter cutoff current
VCE = 13 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 80 mA, VCE = 3 V, pulse measured
1T
S is
2For
measured on the emitter lead at the soldering point to the pcb
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP650F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
fT
-
42
-
GHz
Ccb
-
0.26
-
pF
Cce
-
0.45
-
Ceb
-
1.3
-
AC Characteristics (verified by random sampling)
Transition frequency
IC = 80 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 10 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
IC = 10 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
-
0.8
-
-
1.9
-
IC = 80 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
-
21.5
-
f = 6 GHz
-
11
-
Power gain, maximum available1)
Gma
|S21e|2
Transducer gain
IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
15
17.5
-
-
7.5
-
IP3
-
31
-
P-1dB
-
17.5
-
f = 6 GHz
Third order intercept point at output2)
dB
dBm
VCE = 3 V, IC = 80 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
1dB compression point at output
IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
1G
1/2
ma = |S21e / S12e| (k-(k²-1) )
2IP3 value depends on termination
of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFP650F
Total power dissipation P tot = ƒ(TS)
Collector-base capacitance Ccb = ƒ (VCB)
f = 1 MHz
550
0.8
500
0.7
450
0.6
400
0.5
300
Ccb [pF]
Ptot [mW]
350
250
0.4
0.3
200
150
0.2
100
0.1
50
0
0
0
15
30
45
60
75
90
105
120
135
150
0
1
2
3
4
TS [°C]
5
6
7
8
9
10
VCB [V]
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 1 GHz
Power gain Gma, Gms = ƒ (f)
VCE = 3 V, IC = 80 mA
45
50
45
40
40
35
3.00V
35
30
G
ms
25
G [dB]
fT [GHz]
30
25
20
20
2.00V
G
2
|S |
15
ma
21
15
10
10
5
5
1.00V
0.50V
0
0
0
20
40
60
80
100
120
140
160
180
0
IC [mA]
1
2
3
4
5
6
f [GHz]
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BFP650F
Power gain Gma, Gms = ƒ (IC)
Power gain Gma, Gms = ƒ (VCE )
VCE = 3 V
IC = 80 mA
f = parameter in GHz
f = parameter in GHz
30
30
0.90GHz
28
0.90GHz
26
25
24
1.80GHz
22
20
2.40GHz
1.80GHz
20
18
G [dB]
G [dB]
3.00GHz
2.40GHz
16
15
4.00GHz
5.00GHz
3.00GHz
6.00GHz
14
10
4.00GHz
12
5.00GHz
6.00GHz
10
5
8
6
0
0
20
40
60
80
100
120
140
160
180
200
0
IC [mA]
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VCE [V]
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Package TSFP-4
6
BFP650F
2013-09-06
BFP650F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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2013-09-06
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