BFP540 Data Sheet (573 KB, EN)

BFP540
Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier
3
• Outstanding Gms = 21.5 dB at 1.8 GHz
Minimum noise figure NFmin = 0.9 dB at 1.8 GHz
2
4
1
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
BFP540
ATs
Pin Configuration
1=B
2=E
3=C
4=E
-
Package
-
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit
V
TA = 25 °C
4.5
TA = -55 °C
4
Collector-emitter voltage
VCES
14
Collector-base voltage
VCBO
14
Emitter-base voltage
VEBO
1
Collector current
IC
80
Base current
IB
8
Total power dissipation1)
Ptot
250
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
mA
TS ≤ 77°C
1T
S is measured on the emitter lead at the soldering point to the pcb
1
2013-09-20
BFP540
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
290
K/W
Values
Unit
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Parameter
min.
typ.
max.
4.5
5
-
V
ICES
-
-
10
µA
ICBO
-
-
100
nA
IEBO
-
-
10
µA
hFE
50
110
185
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 14 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
1For
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-20
BFP540
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
21
30
-
Ccb
-
0.14
0.24
Cce
-
0.33
-
Ceb
-
0.65
-
AC Characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 50 mA, VCE = 4 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
-
0.9
1.4
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
-
1.3
-
Gms
-
21.5
-
dB
Gma
-
16
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
|S21e|2
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
16
18.5
-
-
14.5
-
IP3
-
24.5
-
P-1dB
-
11
-
f = 3 GHz
Third order intercept point at output2)
dB
dBm
VCE = 2 V, IC = 20 mA, ZS =ZL =50 Ω, f = 1.8 GHz
1dB compression point at output
IC = 20 mA, VCE = 2 V, ZS =ZL =50 Ω, f = 1.8 GHz
1/2
ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
1G
3
2013-09-20
BFP540
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
300
mW
RthJS
Ptot
K/W
200
10 2
150
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
100
50
0
0
20
40
60
80
100
120 °C
10 1 -7
10
150
10
-6
10
-5
10
-4
10
-3
10
-2
TS
s
10
tp
Permissible Pulse Load
Collector-base capacitance Ccb = ƒ(VCB )
Ptotmax/PtotDC = ƒ(tp )
f = 1MHz
10 1
P totmax/ PtotDC
0.2
pF
Ccb
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.1
0.05
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
tp
0.5
1
1.5
2
2.5
3
V
4
VCB
4
2013-09-20
0
BFP540
Third order Intercept Point IP3=ƒ(IC)
Transition frequency fT= ƒ(IC)
(Output, ZS=ZL=50Ω)
f = 1GHz
VCE = parameter, f = 1.8GHz
VCE = Parameter in V
35
30
dBm
GHz
4V
26
24
3V
25
2V
20
fT
IP3
22
18
4
20
1.5V
3
16
15
14
12
1V
10
2
1.5
10
8
1
5
6
0.5
4
2
0
10
20
30
40
50
60
70
80 mA
0
0
100
10
20
30
40
50
60
70 mA
IC
90
IC
Power gain Gma, Gms = ƒ(IC )
Power Gain Gma, Gms = ƒ(f),
VCE = 2V
|S21|² = f (f)
f = Parameter in GHz
VCE = 2V, IC = 20mA
50
30
dB
dB
1
40
35
G
IC
20
2
30
3
25
Gms
15
4
10
20
5
Gma
6
15
|S21|²
5
10
0
0
10
20
30
40
50
60
70 mA
5
0
90
IC
1
2
3
4
GHz
6
G
5
2013-09-20
BFP540
Power gain Gma, Gms = ƒ (VCE )
Noise figure F = ƒ(IC )
IC = 20mA
VCE = 2V, ZS = ZSopt
f = Parameter in GHz
30
4
dB
dB
1
3
20
F
G
2
15
2.5
2
3
10
1.5
4
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
5
1
6
5
0.5
0
0
0.5
1
1.5
2
2.5
3
V
0
0
4
10
20
30
40
50
60
mA
VCE
80
IC
Noise figure F = ƒ(IC )
VCE = 2V, f = 1.8GHz
Noise figure F = ƒ(f)
VCE = 2V, ZS = ZSopt
4
3
dB
dB
3
F
F
2
2.5
2
1.5
1.5
1
1
ZS = 50Ohm
ZS = Zsopt
IC = 20mA
IC = 5mA
0.5
0.5
0
0
10
20
30
40
50
60
mA
0
0
80
IC
1
2
3
4
GHz
6
f
6
2013-09-20
BFP540
Source impedance for min.
noise figure vs. frequency
VCE = 2V, IC = 5mA / 20mA
+j50
+j25
+j100
+j10
2.4GHz 1.8GHz
0.9GHz
3GHz
0
10
25
50
100
4GHz
5mA
20mA
5GHz
-j10
6GHz
-j25
-j100
-j50
7
2013-09-20
BFP540
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFP540 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFP540 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
8
2013-09-20
Package SOT343
9
BFP540
2013-09-20
BFP540
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
10
2013-09-20
Similar pages