Bourns® high-surge programmable thyristor (TISP9110MDMR-S)

*R
oH
S
CO
M
PL
IA
NT
TISP9110MDM
INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP9110MDM Overvoltage Protector
8-SOIC (210 mil) Package (Top View)
High Performance Protection for SLICs with +ve and -ve
Battery Supplies
– Wide -110 V to +110 V Programming Range
– Low 5 mA max. Gate Triggering Current
– Dynamic Protection Performance Specified for
International Surge Waveshapes
1
8
NC
(-V(BAT))
G1
2
7
Ground
(+V(BAT))
G2
3
6
Ground
(Ring or Tip) Line
4
5
NC
(Tip or Ring) Line
Applications include:
– Wireless Local Loop
– Access Equipment
– Regenerated POTS
– VOIP Applications
NC - No internal connection
Terminal typical application names shown in
parenthesis
MD-8SOIC(210)-003-a
Rated for International Surge Wave Shapes
Wave Shape
Standard
IPPSM
A
2/10
GR-1089-CORE
150
10/700
ITU-T K.20/21/45
80
10/1000
GR-1089-CORE
50
Device Symbol
Line
Description
G1
The Model TISP9110MDM is a programmable overvoltage
protection device designed to protect modern dual polarity supply
rail ringing SLICs (Subscriber Line Interface Circuits) against
overvoltages on the telephone line. Overvoltages can be caused
by lightning, a.c. power contact and induction. Four separate
protection structures are used; two positive and two negative
to provide optimum protection during Metallic (Differential) and
Longitudinal (Common Mode) protection conditions in both polarities. Dynamic protection performance is specified under typical
international surge waveforms from Telcordia GR-1089-CORE,
ITU-T K.44 and YD/T 950.
G2
Ground
Line
SD-TISP9-001-a
The Model TISP9110MDM is programmed by connecting the G1
and G2 gate terminals to the negative (-V(BAT)) and positive (+V(BAT)) SLIC Battery supplies respectively. This creates a protector operating at
typically +1.4 V above +V(BAT) and -1.4 V below -V(BAT) under a.c. power induction and power contact conditions. The protector gate circuitry
incorporates 4 separate buffer transistors designed to provide independent control for each protection element. The gate buffer transistors
minimize supply regulation issues by reducing the gate current drawn to around 5 mA, while the high voltage base emitter structures eliminate
the need for expensive reverse bias protection gate diodes.
The Model TISP9110MDM is rated for common surges contained in regulatory requirements such as ITU-T K.20, K.45, Telcordia GR-1089CORE, YD/T 950. With the use of appropriate overcurrent protection devices such as the Bourns® Multifuse® and Telefuse™ devices, circuits
can be designed to comply with modern telecom standards.
How To Order
Device
Package
Carrier
TISP9110MDM
8-SOIC (210 mil)
Embossed Tape Reeled
Order As
TISP9110MDMR-S
Marking Code
Standard Quantity
9110M
2000
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
APRIL 2013 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP9110MDM Overvoltage Protector
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
VDRM
-120
+120
V
Repetitive peak off-state voltage
VG1(Line) = 0,V G2 ≥ +5 V
VG2(Line) = 0,V G1 ≥ -5 V
Non-repetitive peak impulse current (see Notes 1, 2, 3 and 4)
2/10 μs (Telcordia GR-1089-CORE)
5/310 μs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 ms)
10/1000 μs (T elcordia GR-1089-CORE)
IPPSM
±150
±80
±50
A
ITSM
9.0
5.0
1.7
A
Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 5)
0.2 s
1s
900 s
Maximum negative battery supply voltage
VG1M
-110
V
Maximum positive battery supply voltage
VG2M
+110
V
Maximum differential battery supply voltage
V(BAT)M
Junction temperature
Storage temperature range
220
V
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. The rated current values may be applied to either of the Line to Ground terminal pairs. Additionally, both terminal pairs may have
their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of a
single terminal pair).
3. Rated currents only apply if pins 6 & 7 (Ground) are connected together.
4. Applies for the following bias conditions: VG1 = -20 V to -110 V, VG2 = 0 V to +110 V.
5. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
VD = VDRM, VG1(Line) = 0, VG2 ≥ +5 V
ID
Off-state current
VD = VDRM, VG2(Line) = 0, VG1 ≥ -5 V
Min
Typ
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
Max Unit
-5
-50
+5
+50
μA
IG1(Line)
Negative-gate leakage current
VG1(Line) = -220 V
-5
μA
IG2(Line)
Positive-gate leakage current
VG2(Line) = +220 V
+5
μA
VG1L(BO)
Gate - Line impuls e breakover voltage
VG1 = -100 V, IT = -100 A (see Note 6)
VG1 = -100 V, IT = -30 A
VG2L(BO)
Gate - Line impuls e breakover voltage
VG2 = +100 V, IT = +100 A (see Note 6)
VG2 = +100 V, IT = +30 A
IH-
Negative holding current
IG1T
Negative-gate trigger current
IT = -5 A,t
IG2T
Positive-gate trigger current
IT = 5 A,t
CO
Line - Ground off-state capacitance
NOTE:
VG1 = -60 V, IT = -1 A, di/dt = 1 A/ms
2/10 μs
10/1000 μs
-15
-11
V
2/10 μs
10/1000 μs
+15
+11
V
+5
mA
-5
mA
-150
mA
p(g) ≥ 20 μs, VG1 = -60 V
p(g) ≥
20 μs, VG2 = 60 V
f = 1 MHz, VD = -3 V, G1 & G2 open circuit
33
pF
6. Voltage measurements should be made with an oscillosc ope with limited bandw idth (20 MHz) to avoid high frequency no ise.
APRIL 2013 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP9110MDM Overvoltage Protector
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
RθJA
NOTE
Test Conditions
Junction to ambient thermal resistance
Min Typ Max
Unit
55
°C/W
EIA/JESD51-7 PCB, EIA/JESD51-2 Environment, PTOT = 4 W
(See Note 7)
7. EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths.
Parameter Measurement Information
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
ITRM
V(BO)
IH
V G1
-v
VD
ID
ID
VD
V G2
+v
IH
V(BO)
ITRM
Quadrant III
ITSM
Switching
Characteristic
IPPSM
-i
Figure 1. Voltage-Current Characteristic
Unless Otherwise Noted, All Voltages are Referenced to the Ground Terminal
APRIL 2013 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
PM-TISP9-001-a
TISP9110MDM Overvoltage Protector
Typical Characteristics
OFF-STATE CAPACITANCE
vs
OFF-STATE VOLTAG E TC-TISP9-001-a
Co - Off-state Capacitance - pF
45
40
35
30
25
20
15
10
0.1
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A
50
Thermal Information
TJ = 25 °C
V d = 1 Vrms
1
10
V D - Off-state Voltage - V
Figure 2.
100
TI-TISP9-001-a
15
V GEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*V GEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-7 PCB, TA = 25 °C
SIMULTANEOUS OPERATION
OF R AND T TERMINALS.
GROUND TERMINAL
CURRENT = 2 x ITSM(t)
10
9
8
7
6
5
4
3
2
1.5
1
0.1
1
10
100
1000
t - Current Duration - s
Figure 3.
APRIL 2013 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP9110MDM Overvoltage Protector
APPLICATIONS INFORMATION
Overcurrent
Protection
SLIC
SLIC
PROTECTOR
Tip
C1
220 nF
C2
220 nF
Ring
TISP9110MDM
+V BAT
D1
-VBAT
Figure 4. Typical Application Diagram
GR-1089-CORE Intra Building
Overcurrent Protection 1
ITU-T K.20 (Basic)
Overcurrent Protection 2
F1a
B0500T
F1b
B0500T
ITU-T K.20 (Enhanced 10/700 μs 4 kV)
Overcurrent Protection 3
+ t°
MF-SM013-250
+ t°
*55 Ω CPTC
+ t°
MF-SM013-250
+ t°
*55 Ω CPTC
Figure 5. Typical Overcurrent Protection
* Specific CPTC can withstand
10/700 4 kV without primary protector.
“TISP” is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that “TISP” is a registered trademark of Bourns, Inc. in China.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
APRIL 2013 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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