PTVS6-380C-TH

T
PL
IA
N
M
CO
*R
oH
S
Features
Applications
■ 6 kA, 8/20 µs surge capability
■ AC line protection
■ Low clamping voltage under surge
■ High power DC bus protection
■ Bidirectional TVS
■ Excellent performance over temperature
PTVS6-xxxC-TH Series High Voltage, High Current TVS Diodes
General Information
The Model PTVS6-xxxC-TH high voltage, bidirectional TVS diode series is designed for
use in AC line and high power DC bus clamping applications.
The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current
surge requirements.
Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
Rating
PTVS6-380C-TH
PTVS6-430C-TH
Repetitive Standoff Voltage
Peak Current Rating per 8/20 μs IEC 61000-4-5
Symbol
Value
Unit
VWM
380
430
V
IPPM
6
kA
Operating Junction Temperature Range
TJ
-55 to +125
°C
Storage Temperature Range
TS
-55 to +150
°C
260
°C
Lead Temperature, Soldering (10 s)
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
ID
Standby Current
V(BR) Breakdown Voltage
VC
Clamping Voltage (1)
Test Conditions
Capacitance
Typ.
Max.
Unit
10
μA
401
440
422
465
443
490
V
VD = VWM
IBR = 10 mA
PTVS6-380C-TH
PTVS6-430C-TH
IPP = 10 kA
PTVS6-380C-TH
PTVS6-430C-TH
V(BR) Temperature Coefficient
C
Min.
F = 10 kHz,
Vd = 1 Vrms
PTVS6-380C-TH
PTVS6-430C-TH
520
580
V
0.1
%/°C
0.65
0.70
nF
(1) V measured at the time which is coincident with the peak surge current.
C
Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
PTVS6-xxxC-TH Series High Voltage, High Current TVS Diodes
Performance Graphs
V-I Characteristic
Typical VBR vs. Junction Temperature
16
Percent of VBR Change
14
12
10
8
6
25 °C
4
2
0
-4
-6
-8
-40 -20
0
20
40
60
80 100 120 140 160
Junction Temperature (TJ) - °C
Typical Surge Current Derating
Current 8/20 µs Waveform per IEC 61000-4-5
IPP – Peak Pulse Current (% of IPP)
Percent of Rated Value
120
110
100
90
80
70
60
50
40
30
20
10
120
Test Waveform Parameters
tt = 8 µs
td = 20 µs
tt
100
80
et
60
40
td = t|IPP/2
20
0
0
10
5
0
0
25
50
75
100
125
150
15
20
25
30
t – Time (µs)
175
Ambient Temperature (°C)
Typical Waveform Under Surge
This graph shows the typical device surge current derating
versus ambient temperature when subjected to the 8/20 µs
current waveform per the IEC 61000-4-5 specification.
This device is not intended for continuous operation at
temperatures above 125 °C.
Current
Voltage
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
0
10
20
30
t – Time (µs)
40
50
PTVS6-xxxC-TH Series High Voltage, High Current TVS Diodes
Product Dimensions
Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead finish conforms to the solderability requirements of JESD22-B102,
Pb free solder. Package dimensions are shown below:
G
Dim.
F
A
B
D
C
C
D
H
E
F
B
E
A
DIMENSIONS:
MM
(INCHES)
G
H
Typical Part Marking
PTVS6-380C-TH .......................................................................6380
PTVS6-430C-TH .......................................................................6430
PTVS6-380C-TH
PTVS6-430C-TH
24.15 ± 0.72
(0.951 ± 0.028)
2.40 ± 0.50
(0.094 ± 0.020)
1.75 ± 1.25
(0.069 ± 0.049)
12.00
Max.
(0.472)
1.25 ± 0.05
(0.049 ± 0.002)
11.50
Max.
(0.453)
16.50
Max.
(0.650)
6.00 ± 1.00
(0.236 ± 0.039)
How to Order
PTVS 6 - 380 C - T H
Series
PTVS = Power TVS High Current Diode
Peak Current Rating
6 = 6 kA
Repetitive Standoff Voltage
380 = 380 V
430 = 430 V
Suffix
C = Bidirectional Device
Package
T = Through-Hole
Temperature
H = High Temperature Series
REV. 11/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.