Datasheet UM5075,5079 Rev02

UM5075/5079
Single Line ESD Protection Diode Array
UM5075 SOD523
UM5079 DFN2/FBP2 1.0×0.6
General Description
The UM5075/5079 ESD protection diode is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature large
cross-sectional area junctions for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, lower operating voltage,
lower clamping voltage and no device degradation when compared to MLVs.
The UM5075/5079 ESD protection diode protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events.
The UM5075 is available in SOD523 package and the UM5079 is available in DFN2/FBP2
1.0×0.6mm2 (compatible with SOD882/SOD923) package, both with working voltage of 7 volt.
It gives designer the flexibility to protect one unidirectional line in applications where arrays are
not practical. Additionally, it may be “sprinkled” around the board in applications where board
space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2,
Level 4 (±15kV air, ±8kV contact discharge).
Applications
Features

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Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebooks, Desktops and Servers
Portable Instrumentation
Cordless Phones
Digital Cameras
Peripherals
MP3 Players
Pin Configurations

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Transient Protection for Data Lines to IEC
61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
Small Package for Use in Portable Electronics
Suitable Replacement for MLV’s in ESD
Protection Applications
Protect One I/O or Power Line
Low Clamping Voltage
Stand-off Voltage: 7V
Low Leakage Current
Solid-State Silicon-Avalanche Technology
Top View
UM5075
SOD523
UM5079
DFN2/FBP2 1.0×0.6
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UM5075/5079
Ordering Information
Part
Number
Working
Voltage
Packaging Type
UM5075
UM5079
UM5079
Channel
SOD523
7.0V
DFN2 1.0×0.6
FBP2 1.0×0.6
Marking
Code
Shipping Qty
3000pcs/7 Inch
Tape & Reel
5000pcs/7 Inch
Tape & Reel
ZB
1
E3
E3
Absolute Maximum Ratings
Rating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20μs)
PPK
200
Watts
Maximum Peak Pulse Current (t=8/20μs)
Lead Soldering Temperature
Operating Temperature
Storage Temperature
IPP
TL
TJ
TSTG
12
260 (10 sec.)
-55 to +125
-55 to +150
Amps
°C
°C
°C
Symbol Definition
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ Ipp
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ It
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @ VR = 0V, f = 1MHz
Symbol
IPP
VC
VRWM
IR
VBR
It
IF
VF
PPK
C
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UM5075/5079
Electrical Characteristics
(T=25°C, Device for 7.0V Reverse Stand-off Voltage)
Parameter
Symbol
Conditions
Reverse Stand-Off
VRWM
Voltage
Reverse Breakdown
VBR
It = 1mA
Voltage
Reverse Leakage
IR
VRWM = 7V, T=25°C
Current
IPP = 5A, tp = 8/20μs
Clamping Voltage
VC
IPP =12A, tp = 8/20μs
Min
Typ
Max
Unit
7
V
7.6
8.0
V
0.005
1
μA
7.3
11.4
V
16.4
Forward Voltage
VF
IF = 10mA
0.8
Junction Capacitance
Junction Capacitance
CJ
CJ
VR = 0V, f = 1MHz
VR = 2.5V, f = 1MHz
40
30
V
50
40
pF
pF
Typical Operating Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
10
17
Clamping Voltage - Vc(V)
15
1
0.1
14
13
12
11
Waveform
parameters:
tr=8uS
td=20uS
10
9
8
0.01
0.1
1
10
100
0
1000
2
4
6
8
10
12
Peak Pulse Current - Ipp(A)
Pulse Duration - tp(uS)
Forward Voltage vs. Forward Current
Junction Capacitance vs. Reverse Voltage
7
50
Junction Capacitance(pF)
6
Forward Voltage - Vf(V)
Peak Pulse Power - Ppk(kW)
16
5
4
3
Waveform
parameters:
tr=8uS
td=20uS
2
45
40
35
30
1
2
4
6
8
Forward Current - If(A)
10
12
0
1
2
3
4
5
Reverse Voltage (V)
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UM5075/5079
Applications Information
Device Connection Options
UM5075/5079 ESD protection diode is designed to protect one data, I/O, or power supply line.
The device is unidirectional and may be used on lines where the signal polarity is above ground.
The cathode band should be placed towards the line that is to be protected.
Circuit Board Layout Recommendations for Suppression of ESD
Good circuit board layout is critical for the suppression of ESD induced transients. The following
guidelines are recommended:
1. Place the TVS near the input terminals or connectors to restrict transient coupling.
2. Minimize the path length between the TVS and the protected line.
3. Minimize all conductive loops including power and ground loops.
4. The ESD transient return path to ground should be kept as short as possible.
5. Never run critical signals near board edges.
6. Use ground planes whenever possible. For multilayer printed-circuit boards, use ground
vias.
7. Keep parallel signal paths to a minimum.
8. Avoid running protection conductors in parallel with unprotected conductor.
9. Minimize all printed-circuit board conductive loops including power and ground loops.
10. Avoid using shared transient return paths to a common ground point.
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UM5075/5079
Package Information
UM5075 SOD523
Outline Drawing
DIMENSIONS
MILLIMETERS
INCHES
Symbol
Min
Max
Min
Max
A
0.510
0.770
0.020
0.031
A1
0.500
0.700
0.020
0.028
b
0.250
0.350
0.010
0.014
c
0.080
0.150
0.003
0.006
D
0.750
0.850
0.030
0.033
E
1.100
1.300
0.043
0.051
E1
1.500
1.700
0.059
0.067
E2
0.200REF
0.008REF
L
0.010
0.070
0.001
0.003
θ
7°REF
7°REF
Land Pattern
NOTES:
1. Compound dimension: 1.20×0.80;
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
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UM5075/5079
UM5079 DFN2 1.0×0.6
Outline Drawing
Symbol
A
A1
b
D
E
E1
e
R
DIMENSIONS
MILLIMETERS
INCHES
Min
Max
Min
Max
0.470
0.530
0.019
0.021
0.000
0.050
0.000
0.002
0.200
0.300
0.008
0.012
0.950
1.075
0.037
0.042
0.550
0.675
0.022
0.027
0.450
0.550
0.018
0.022
0.400
0.016
0.050
0.150
0.002
0.006
Land Pattern
NOTES:
1. Compound dimension: 1.00×0.60;
2. Unit: mm;
3. General tolerance ±0.025mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Specification
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UM5075/5079
UM5079 FBP2 1.0×0.6
Outline Drawing
DIMENSIONS
MILLIMETERS
INCHES
Symbol
Min
Max
Min
Max
A
0.550
0.021
A1
0.010
0.070
0.000 0.003
b
0.275
0.325
0.011 0.013
D
0.950
1.050
0.037 0.041
D1
0.275
0.325
0.011 0.013
E
0.400REF
0.016REF
E1
0.550
0.650
0.022 0.026
L
0.450REF
0.018REF
Land Pattern
NOTES:
1. Compound dimension: 1.00×0.60;
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Specification
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UM5075/5079
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be
accurate. Nonetheless, this document is subject to change without notice. Union assumes
no responsibility for any inaccuracies that may be contained in this document, and makes
no commitment to update or to keep current the contained information, or to notify a
person or organization of any update. Union reserves the right to make changes, at any
time, in order to improve reliability, function or design and to attempt to supply the best
product possible.
Union Semiconductor, Inc
Add: Unit 606, No.570 Shengxia Road, Shanghai 201210
Tel: 021-51093966
Fax: 021-51026018
Website: www.union-ic.com
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