BFP840FESD Data Sheet (1.4 MB, EN)

BFP840FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-04-03
RF & Protection Devices
Edition 2013-04-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP840FESD
BFP840FESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2013-04-03, Revision 1.2
Page
Subjects (major changes since last revision)
This data sheet replaces the revision from 2012-07-11.
P. 8
Item about AEC-Q101 added to feature list, minor changes.
P. 27
Picture for marking description updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.2, 2013-04-03
BFP840FESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7
Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
4
11
11
11
12
16
19
Revision 1.2, 2013-04-03
BFP840FESD
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 5-20
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Data Sheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP840FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . .
3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . .
Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz . . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . .
Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA. . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP840FESD: T8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
16
16
17
17
18
19
19
20
20
21
21
22
22
23
23
24
24
25
25
27
27
27
27
Revision 1.2, 2013-04-03
BFP840FESD
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Table 5-10
Table 5-11
Data Sheet
Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 1.8 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 1.8 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 1.8 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 1.8 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 1.8 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 1.8 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 1.8 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 1.8 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 1.8 V, f = 12 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision 1.2, 2013-04-03
BFP840FESD
Product Brief
1
Product Brief
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6
GHz Wi-Fi applications. The device is based on Infineon‘s reliable high volume SiGe:C technology.
The BFP840FESD provides inherently good input and output power match as well as inherently good noise match
at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input
leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi
application. Integrated protection elements at in- and output make the device robust against ESD and excessive
RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat
package with visible leads.
Data Sheet
7
Revision 1.2, 2013-04-03
BFP840FESD
Features
2
•
•
•
•
•
•
•
•
•
Features
Robust ultra low noise amplifier based on Infineon´s reliable
high volume SiGe:C technology
Unique combination of high end RF performance and robustness:
20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
Very high transition frequency fT = 85 GHz enables best in
class noise performance at high frequencies:
NFmin = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA
High gain |S21|2 = 19 dB @ 5.5 GHz, 1.8 V, 10 mA
OIP3 = 22.5 dBm at 5.5 GHz, 1.5 V, 6 mA
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
Low power consumption, ideal for mobile applications
Pb free (RoHS compliant) and halogen free thin flat package
with visible leads
Qualification report according to AEC-Q101 available
TSFP-4-1
Applications
As Low Noise Amplifier (LNA) in
•
•
•
•
Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass)
and C-band LNB (1st and 2nd stage LNA)
Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
Ka-band oscillators (DROs)
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFP840FESD
TSFP-4-1
Data Sheet
Pin Configuration
1=B
2=E
8
3=C
Marking
4=E
T8s
Revision 1.2, 2013-04-03
BFP840FESD
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Collector emitter voltage
VCEO
Values
Min.
Max.
–
2.25
2.0
Unit
Note / Test Condition
V
TA = 25 °C
TA = -55 °C
Open base
1)
Collector emitter voltage
VCES
–
2.25
2.0
V
TA = 25 °C
TA = -55 °C
E-B short circuited
2)
Collector base voltage
VCBO
–
2.9
2.6
V
TA = 25 °C
TA = -55 °C
Open emitter
Base current
IB
-5
3
mA
–
Collector current
IC
–
35
mA
–
RF input power
PRFin
–
20
dBm
–
ESD stress pulse
VESD
-1.5
1.5
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation3)
Ptot
–
75
mW
TS ≤ 109 °C
Junction temperature
TJ
–
150
°C
–
Storage temperature
TStg
-55
150
°C
–
1) VCES is identical to VCEO due to design.
2) VCBO is similar to VCEO due to design.
3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.2, 2013-04-03
BFP840FESD
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
541
–
K/W
–
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation).
80
70
60
Ptot [mW]
50
40
30
20
10
0
0
25
50
75
TS [°C]
100
125
150
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Data Sheet
10
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Collector emitter breakdown voltage
V(BR)CEO
2.25
2.6
Collector emitter leakage current
ICES
–
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
nA
VCE = 1.5 V, VBE = 0
Max.
400
E-B short circuited
Collector base leakage current
ICBO
–
–
400
nA
VCB = 1.5 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
–
10
DC current gain
hFE
150
260
450
μA
VEB = 0.5 V, IC = 0
Open collector
VCE = 1.8 V, IC = 10 mA
Pulse measured
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Transition frequency
fT
–
85
–
GHz
VCE = 1.8 V, IC = 25 mA
f = 2 GHz
Collector base capacitance
CCB
–
38
–
fF
VCB = 1.8 V, VBE = 0
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.37
–
pF
VCE = 1.8 V, VBE= 0
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
0.37
–
pF
VEB = 0.4 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
C
E
VB
B
Bias-T
E
(Pin 1)
IN
Figure 5-1 BFP840FESD Testing Circuit
Table 5-3
AC Characteristics, VCE = 1.8 V, f = 0.45 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
35
28
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.55
27
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
4
19.5
–
–
Data Sheet
Note / Test Condition
IC = 10 mA
IC = 10 mA
dB
IC = 5 mA
IC = 5 mA
dBm
12
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
Table 5-4
AC Characteristics, VCE = 1.8 V, f = 0.9 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
31
27
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
26.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
4
19.5
–
–
Table 5-5
dB
Symbol
Values
Min.
Typ.
Max.
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Unit
Note / Test Condition
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
28.5
26
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
25
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
4
20
–
–
IC = 10 mA
IC = 10 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
27.5
25.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.65
24
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 10 mA
IC = 10 mA
AC Characteristics, VCE = 1.8 V, f = 1.5 GHz
Parameter
Table 5-6
Note / Test Condition
IC = 10 mA
IC = 10 mA
dB
IC = 5 mA
IC = 5 mA
dBm
OP1dB
OIP3
–
–
4.5
21
13
–
–
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
Table 5-7
AC Characteristics, VCE = 1.8 V, f = 2.4 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
26.5
24
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.65
22.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
4
21
–
–
Table 5-8
dB
Symbol
Values
Min.
Typ.
Max.
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Unit
Note / Test Condition
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
25
22
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.7
20.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
5
22.5
–
–
IC = 10 mA
IC = 10 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 1.8 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
23
19
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.75
17.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 10 mA
IC = 10 mA
AC Characteristics, VCE = 1.8 V, f = 3.5 GHz
Parameter
Table 5-9
Note / Test Condition
IC = 10 mA
IC = 10 mA
dB
IC = 5 mA
IC = 5 mA
dBm
OP1dB
OIP3
–
–
5
22
14
–
–
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
Table 5-10 AC Characteristics, VCE = 1.8 V, f = 10 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
dB
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
16
13
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.1
13
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
3
19.5
–
–
IC = 10 mA
IC = 10 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 10 mA
IC = 10 mA
Table 5-11 AC Characteristics, VCE = 1.8 V, f = 12 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
dB
Power gain
Maximum power gain
Transducer gain
Note / Test Condition
Gma
|S21|
2
–
15.5
–
IC = 10 mA
–
10.5
–
IC = 10 mA
dB
Minimum Noise Figure
Minimum noise figure
NFmin
–
1.3
–
IC = 5 mA
Associated gain
Gass
–
10.5
–
IC = 5 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB compression point at output
OP1dB
–
1.5
–
IC = 10 mA
3rd order intercept point at output
OIP3
–
18.5
–
IC = 10 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
15
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
5.4
Characteristic DC Diagrams
18
IB = 70µA
16
IB = 60µA
14
IB = 50µA
IC [mA]
12
IB = 40µA
10
8
IB = 30µA
6
IB = 20µA
4
IB = 10µA
2
0
0
0.5
1
1.5
VCE [V]
2
2.5
3
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
3
h
FE
10
2
10
−2
10
−1
0
10
10
IC [mA]
1
10
2
10
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 1.8 V
Data Sheet
16
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
2
10
1
10
0
10
IC [mA]
−1
10
−2
10
−3
10
−4
10
−5
10
0.5
0.6
V
0.7
[V]
0.8
0.9
BE
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V
0
10
−1
10
−2
10
I
B
[mA]
−3
10
−4
10
−5
10
−6
10
−7
10
0.5
0.6
0.7
VBE [V]
0.8
0.9
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V
Data Sheet
17
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
−6
10
−7
10
−8
I
B
[A]
10
−9
10
−10
10
−11
10
0.3
0.4
0.5
VEB [V]
0.6
0.7
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V
Data Sheet
18
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
Characteristic AC Diagrams
fT [GHz]
5.5
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
2.00V
1.80V
1.50V
1.00V
0.50V
0
5
10
15
20
25
I [mA]
30
35
40
45
C
Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter
25
OIP3 [dBm]
20
15
10
1.5V, 2400MHz
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
5
0
0
5
10
15
I [mA]
C
20
25
30
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters
Data Sheet
19
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
4
8
6
7
9 10
112
1 3
1
20
14
15 16 17 8
1
19
15 16 17 18
19
14
20
21
20
21
15 16
17
15
9 10
112
1 3
1
18
19
IC [mA]
5
20
25
21
18
10
20
19
5
22
21
22
21
19 20
1.8
22
21
19 20
1.4
1.6
V [V]
20
19
1.2
1
22
2
CE
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
25
0 1
−6 −5 −4 3
−
5
4
6
−2
5
3
6
5
4
10
4
3
2
2
1
0
−1
−2
1
7
6
5
3
5
7
5
4
4
IC [mA]
2
15
3
2
1
6
−1 0
20
1.2
3
2
1
0
−1
−2
1.4
2
1
0
−1
1.6
1.8
2
VCE [V]
Figure 5-10 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
Data Sheet
20
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
0.05
CCB [pF]
0.045
0.04
0.035
0.03
0
0.2
0.4
0.6
0.8
1
V
CB
1.2
1.4
1.6
1.8
2
[V]
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
40
35
30
Gms
G [dB]
25
G
ma
20
2
|S21|
15
10
5
0
0
1
2
3
4
5
6
7
f [GHz]
8
9
10
11
12
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA
Data Sheet
21
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
40
0.45GHz
35
Gmax [dB]
0.9GHz
30
1.5GHz
1.9GHz
2.4GHz
25
3.5GHz
20
5.5GHz
15
10.0GHz
12.0GHz
10
0
5
10
15
20
25
I [mA]
30
35
40
45
C
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz
39
36
0.45GHz
33
Gmax [dB]
0.9GHz
30
1.5GHz
27
1.9GHz
2.4GHz
3.5GHz
24
5.5GHz
21
18
10GHz
15
12GHz
12
9
0
0.5
1
1.5
2
2.5
VCE [V]
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
1
1.5
0.5
2
0.4
3
0.3
12.0
12.0
0.2
11.0
4
11.0
5
10.0
0.03 to 12 GHz
9.0
10.0
0.1
10
8.0
9.0
0.1
0
7.0
0.2 0.3 0.4 0.5
−0.1
1
1.5
2
3
4 5
7.0
0.03
0.03
6.0
8.0
5.0
−10
4.0
6.0
−0.2
−5
3.0
5.0
1.0
1.0
2.0
−4
−0.3
5.0mA
−3
4.0
3.0
−0.4
10mA
2.0
15mA
−0.5
−2
−1.5
−1
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
5.5
0.1
3.5
5.5
2.4
1.9
1.5
0.1
0
0.2 0.3 0.4 0.5
10
0.9
8.0
0.5
2.4
1 5.53.51.5
1.5 2
0.5
8.0
3
4 5
10.0
−0.1
−10
10.0
12.0
−0.2
12.0
−5
−4
−0.3
−3
5mA
−0.4
10mA
−0.5
−2
15mA
−1.5
−1
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
Data Sheet
23
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
1
1.5
0.5
2
0.4
3
0.3
4
12.0
0.2
12.0
5
11.0
0.03 to 12 GHz
11.0
0.1
10
10.0
10.0
0.1
0
0.2 0.3 0.4 0.5
1
9.0
1.5
2
3
4 5
0.03
9.0
8.0
−0.1
−10
7.0
8.0
−0.2
6.0
5.0
7.0
4.0
−0.3
1.0
3.0
6.0
1.0 −5
−4
2.0
5.0
5.0mA
−3
2.0
4.0
10mA
3.0
−0.4
15mA
−0.5
−2
−1.5
−1
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
0.6
0.4
IC = 15mA
0.2
IC = 10mA
I = 5mA
C
0
0
2
4
6
f [GHz]
8
10
12
Figure 5-18 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt
Data Sheet
24
Revision 1.2, 2013-04-03
BFP840FESD
Electrical Characteristics
2.2
f = 12GHz
2
f = 10GHz
NFmin [dB]
1.8
f = 5.5GHz
1.6
f = 3.5GHz
1.4
f = 2.4GHz
f = 0.9GHz
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
IC [mA]
15
20
NF50 [dB]
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
f = 12GHz
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
0
5
10
IC [mA]
15
20
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Data Sheet
25
Revision 1.2, 2013-04-03
BFP840FESD
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP840FESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP840FESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
26
Revision 1.2, 2013-04-03
BFP840FESD
Package Information TSFP-4-1
7
Package Information TSFP-4-1
1.4 ±0.05
2
10° MAX.
1
3
1.2 ±0.05
0.2 ±0.05
4
0.55 ±0.04
0.8 ±0.05
0.2 ±0.05
0.2 ±0.05
0.15 ±0.05
0.5 ±0.05
0.5 ±0.05
TSFP-4-1, -2-PO V04
Figure 7-1 Package Outline
0.9
0.45
0.35
0.5
0.5
TSFP-4-1, -2-FP V04
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP840FESD: T8s)
0.2
Pin 1
8
1.4
4
0.7
1.55
TSFP-4-1, -2-TP V05
Figure 7-4 Tape dimensions
Data Sheet
27
Revision 1.2, 2013-04-03
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Similar pages