English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
EconoDUAL™3模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有温度检测NTC
EconoDUAL™3modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC
初步数据/PreliminaryData
VCES = 600V
IC nom = 600A / ICRM = 1200A
典型应用
• 斩波应用
TypicalApplications
• ChopperApplications
电气特性
• Tvjop=150°C
ElectricalFeatures
• Tvjop=150°C
机械特性
• 标封装
MechanicalFeatures
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
IGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
600
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
IC nom 600
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1200
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Ptot
2250
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
min.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
Tvj = 25°C
Tvj = 125°C
VCE sat
typ.
max.
1,30
1,35
1,60
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
9,60
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,33
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
60,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,70
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 150 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,115
0,115
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 600 A, VCE = 150 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,15
0,16
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 150 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
td off
0,81
0,85
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 600 A, VCE = 150 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,09
0,11
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 600 A, VCE = 150 V, LS = 40 nH
VGE = ±15 V, di/dt = 3000 A/µs
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Eon
4,00
6,10
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 600 A, VCE = 150 V, LS = 40 nH
VGE = ±15 V, du/dt = 1500 V/µs
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
15,5
17,5
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
6300
4500
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,016
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
2
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 125°C
0,055 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
二极管,制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 600
V
IF
600
A
IFRM
1200
A
I²t
20000
A²s
特征值/CharacteristicValues
min.
typ.
max.
1,15
1,05
1,45
正向电压
Forwardvoltage
IF = 600 A, VGE = 0 V
IF = 600 A, VGE = 0 V
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 600 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 150 V
Tvj = 125°C
IRM
80,0
150
A
A
恢复电荷
Recoveredcharge
IF = 600 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 150 V
Tvj = 125°C
Qr
10,0
30,0
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 600 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 150 V
Tvj = 125°C
Erec
3,00
7,50
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,023
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
Tvj = 25°C
Tvj = 125°C
VF
V
V
0,08 K/W
K/W
125
°C
反向二极管/Diode,Reverse
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 600
V
IF
60
A
IFRM
120
A
I²t
700
A²s
特征值/CharacteristicValues
min.
typ.
max.
1,25
1,20
1,60
正向电压
Forwardvoltage
IF = 60 A, VGE = 0 V
IF = 60 A, VGE = 0 V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,23
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
Tvj = 25°C
Tvj = 125°C
3
VF
V
V
0,80 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 2,5
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
14,5
13,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
12,5
10,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,009
LsCE
20
nH
RCC'+EE'
1,10
mΩ
Tstg
-40
125
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,0
-
6,0
Nm
重量
Weight
G
345
g
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
4
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
输出特性IGBT,制动-斩波器(典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,制动-斩波器(典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
Tvj=125°C
1200
1200
Tvj = 25°C
Tvj = 125°C
1100
900
900
800
800
700
700
IC [A]
1000
IC [A]
1000
600
600
500
500
400
400
300
300
200
200
100
100
0
0,0
0,3
0,6
0,9
VGE = 19 V
VGE = 17 V
VGE = 15 V
VGE = 13 V
VGE = 11 V
VGE = 9 V
1100
1,2
1,5 1,8
VCE [V]
2,1
2,4
2,7
0
3,0
传输特性IGBT,制动-斩波器(典型)
transfercharacteristicIGBT,Brake-Chopper(typical)
IC=f(VGE)
VCE=20V
0,0
0,3
0,6
0,9
1,2
1,5 1,8
VCE [V]
2,1
2,4
2,7
3,0
开关损耗IGBT,制动-斩波器(典型)
switchinglossesIGBT,Brake-Chopper(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.4Ω,RGoff=2.4Ω,VCE=150V
1200
50
Tvj = 25°C
Tvj = 125°C
1100
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
45
1000
40
900
35
800
30
E [mJ]
IC [A]
700
600
500
25
20
400
15
300
10
200
5
100
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
5
0
200
400
600
IC [A]
800
1000
1200
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
开关损耗IGBT,制动-斩波器(典型)
switchinglossesIGBT,Brake-Chopper(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=600A,VCE=150V
瞬态热阻抗IGBT,制动-斩波器
transientthermalimpedanceIGBT,Brake-Chopper
ZthJC=f(t)
65
0,1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
60
ZthJC : IGBT
55
50
45
ZthJC [K/W]
E [mJ]
40
35
30
0,01
25
20
15
10
i:
1
2
3
4
ri[K/W]: 0,0033 0,01815 0,0176 0,01595
τi[s]:
0,01
0,02
0,05
0,1
5
0
0
2
4
6
8
0,001
0,001
10 12 14 16 18 20 22 24
RG [Ω]
反偏安全工作区IGBT,制动-斩波器(RBSOA)
reversebiassafeoperatingareaIGBT,Brake-Chopper
(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.4Ω,Tvj=125°C
1400
IC, Modul
IC, Chip
0,01
0,1
t [s]
1
10
正向偏压特性二极管,制动-斩波器(典型)
forwardcharacteristicofDiode,Brake-Chopper(typical)
IF=f(VF)
1200
Tvj = 25°C
Tvj = 125°C
1100
1200
1000
900
1000
800
700
IF [A]
IC [A]
800
600
600
500
400
400
300
200
200
100
0
0
200
400
VCE [V]
600
0
800
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
6
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
2,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
开关损耗二极管,制动-斩波器(典型)
switchinglossesDiode,Brake-Chopper(typical)
Erec=f(IF)
RGon=2.4Ω,VCE=150V
开关损耗二极管,制动-斩波器(典型)
switchinglossesDiode,Brake-Chopper(typical)
Erec=f(RG)
IF=600A,VCE=150V
12
12
Erec, Tvj = 125°C
10
10
9
9
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
200
400
Erec, Tvj = 125°C
11
E [mJ]
E [mJ]
11
600
IF [A]
800
1000
0
1200
瞬态热阻抗二极管,制动-斩波器
transientthermalimpedanceDiode,Brake-Chopper
ZthJC=f(t)
0
1
2
3
4
5
6
7
RG [Ω]
8
9
10 11 12
正向偏压特性反向二极管(典型)
forwardcharacteristicofDiode,Reverse(typical)
IF=f(VF)
0,1
120
ZthJC : Diode
Tvj = 25°C
Tvj = 125°C
110
100
90
70
IF [A]
ZthJC [K/W]
80
0,01
60
50
40
30
20
i:
1
2
3
4
ri[K/W]: 0,0048 0,0264 0,0256 0,0232
τi[s]:
0,01
0,02
0,05
0,1
0,001
0,001
0,01
0,1
t [s]
1
10
0
10
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
7
0,0
0,2
0,4
0,6
0,8
VF [V]
1,0
1,2
1,4
1,6
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
瞬态热阻抗反向二极管
transientthermalimpedanceDiode,Reverse
ZthJC=f(t)
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
1
100000
ZthJC : Diode
Rtyp
R[Ω]
ZthJC [K/W]
10000
0,1
1000
i:
1
2
3
4
ri[K/W]: 0,048 0,264 0,256 0,232
τi[s]:
0,01 0,02 0,05 0,1
0,01
0,001
0,01
0,1
t [s]
1
100
10
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
8
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
Infineon
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD600R06ME3_S2
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:CU
dateofpublication:2013-10-03
approvedby:MK
revision:2.4
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