技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 EconoDUAL™3模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有温度检测NTC EconoDUAL™3modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC 初步数据/PreliminaryData VCES = 600V IC nom = 600A / ICRM = 1200A 典型应用 • 斩波应用 TypicalApplications • ChopperApplications 电气特性 • Tvjop=150°C ElectricalFeatures • Tvjop=150°C 机械特性 • 标封装 MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData IGBT,制动-斩波器/IGBT,Brake-Chopper 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 600 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C IC nom 600 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1200 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 150 Ptot 2250 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues min. 集电极－发射极饱和电压 Collector-emittersaturationvoltage IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V 栅极阈值电压 Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge Tvj = 25°C Tvj = 125°C VCE sat typ. max. 1,30 1,35 1,60 V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 9,60 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,33 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 60,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,70 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 600 A, VCE = 150 V VGE = ±15 V RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C td on 0,115 0,115 µs µs 上升时间(电感负载) Risetime,inductiveload IC = 600 A, VCE = 150 V VGE = ±15 V RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C tr 0,15 0,16 µs µs 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 600 A, VCE = 150 V VGE = ±15 V RGoff = 2,4 Ω Tvj = 25°C Tvj = 125°C td off 0,81 0,85 µs µs 下降时间(电感负载) Falltime,inductiveload IC = 600 A, VCE = 150 V VGE = ±15 V RGoff = 2,4 Ω Tvj = 25°C Tvj = 125°C tf 0,09 0,11 µs µs 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 600 A, VCE = 150 V, LS = 40 nH VGE = ±15 V, di/dt = 3000 A/µs RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C Eon 4,00 6,10 mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 600 A, VCE = 150 V, LS = 40 nH VGE = ±15 V, du/dt = 1500 V/µs RGoff = 2,4 Ω Tvj = 25°C Tvj = 125°C Eoff 15,5 17,5 mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 6300 4500 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,016 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 2 tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 125°C 0,055 K/W K/W 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 二极管，制动-斩波器/Diode,Brake-Chopper 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 600 V IF 600 A IFRM 1200 A I²t 20000 A²s 特征值/CharacteristicValues min. typ. max. 1,15 1,05 1,45 正向电压 Forwardvoltage IF = 600 A, VGE = 0 V IF = 600 A, VGE = 0 V 反向恢复峰值电流 Peakreverserecoverycurrent IF = 600 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C VR = 150 V Tvj = 125°C IRM 80,0 150 A A 恢复电荷 Recoveredcharge IF = 600 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C VR = 150 V Tvj = 125°C Qr 10,0 30,0 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 600 A, - diF/dt = 3000 A/µs (Tvj=125°C) Tvj = 25°C VR = 150 V Tvj = 125°C Erec 3,00 7,50 mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,023 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 Tvj = 25°C Tvj = 125°C VF V V 0,08 K/W K/W 125 °C 反向二极管/Diode,Reverse 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 600 V IF 60 A IFRM 120 A I²t 700 A²s 特征值/CharacteristicValues min. typ. max. 1,25 1,20 1,60 正向电压 Forwardvoltage IF = 60 A, VGE = 0 V IF = 60 A, VGE = 0 V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,23 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 Tvj = 25°C Tvj = 125°C 3 VF V V 0,80 K/W K/W 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. R25 5,00 kΩ ∆R/R -5 5 % P25 20,0 mW 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) 爬电距离 Creepagedistance VISOL 2,5 kV Cu Al2O3 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 14,5 13,0 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 12,5 10,0 mm 相对电痕指数 Comperativetrackingindex CTI > 200 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K) 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting min. typ. RthCH 0,009 LsCE 20 nH RCC'+EE' 1,10 mΩ Tstg -40 125 °C 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm 端子联接扭距 Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,0 - 6,0 Nm 重量 Weight G 345 g preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 4 max. K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 输出特性IGBT,制动-斩波器（典型) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) VGE=15V 输出特性IGBT,制动-斩波器（典型) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) Tvj=125°C 1200 1200 Tvj = 25°C Tvj = 125°C 1100 900 900 800 800 700 700 IC [A] 1000 IC [A] 1000 600 600 500 500 400 400 300 300 200 200 100 100 0 0,0 0,3 0,6 0,9 VGE = 19 V VGE = 17 V VGE = 15 V VGE = 13 V VGE = 11 V VGE = 9 V 1100 1,2 1,5 1,8 VCE [V] 2,1 2,4 2,7 0 3,0 传输特性IGBT,制动-斩波器(典型) transfercharacteristicIGBT,Brake-Chopper(typical) IC=f(VGE) VCE=20V 0,0 0,3 0,6 0,9 1,2 1,5 1,8 VCE [V] 2,1 2,4 2,7 3,0 开关损耗IGBT,制动-斩波器（典型) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=2.4Ω,RGoff=2.4Ω,VCE=150V 1200 50 Tvj = 25°C Tvj = 125°C 1100 Eon, Tvj = 125°C Eoff, Tvj = 125°C 45 1000 40 900 35 800 30 E [mJ] IC [A] 700 600 500 25 20 400 15 300 10 200 5 100 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 5 0 200 400 600 IC [A] 800 1000 1200 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 开关损耗IGBT,制动-斩波器（典型) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=600A,VCE=150V 瞬态热阻抗IGBT,制动-斩波器 transientthermalimpedanceIGBT,Brake-Chopper ZthJC=f(t) 65 0,1 Eon, Tvj = 125°C Eoff, Tvj = 125°C 60 ZthJC : IGBT 55 50 45 ZthJC [K/W] E [mJ] 40 35 30 0,01 25 20 15 10 i: 1 2 3 4 ri[K/W]: 0,0033 0,01815 0,0176 0,01595 τi[s]: 0,01 0,02 0,05 0,1 5 0 0 2 4 6 8 0,001 0,001 10 12 14 16 18 20 22 24 RG [Ω] 反偏安全工作区IGBT,制动-斩波器（RBSOA） reversebiassafeoperatingareaIGBT,Brake-Chopper (RBSOA) IC=f(VCE) VGE=±15V,RGoff=2.4Ω,Tvj=125°C 1400 IC, Modul IC, Chip 0,01 0,1 t [s] 1 10 正向偏压特性二极管，制动-斩波器（典型) forwardcharacteristicofDiode,Brake-Chopper(typical) IF=f(VF) 1200 Tvj = 25°C Tvj = 125°C 1100 1200 1000 900 1000 800 700 IF [A] IC [A] 800 600 600 500 400 400 300 200 200 100 0 0 200 400 VCE [V] 600 0 800 preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 1,8 2,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 开关损耗二极管，制动-斩波器（典型) switchinglossesDiode,Brake-Chopper(typical) Erec=f(IF) RGon=2.4Ω,VCE=150V 开关损耗二极管，制动-斩波器（典型) switchinglossesDiode,Brake-Chopper(typical) Erec=f(RG) IF=600A,VCE=150V 12 12 Erec, Tvj = 125°C 10 10 9 9 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 200 400 Erec, Tvj = 125°C 11 E [mJ] E [mJ] 11 600 IF [A] 800 1000 0 1200 瞬态热阻抗二极管，制动-斩波器 transientthermalimpedanceDiode,Brake-Chopper ZthJC=f(t) 0 1 2 3 4 5 6 7 RG [Ω] 8 9 10 11 12 正向偏压特性反向二极管（典型) forwardcharacteristicofDiode,Reverse(typical) IF=f(VF) 0,1 120 ZthJC : Diode Tvj = 25°C Tvj = 125°C 110 100 90 70 IF [A] ZthJC [K/W] 80 0,01 60 50 40 30 20 i: 1 2 3 4 ri[K/W]: 0,0048 0,0264 0,0256 0,0232 τi[s]: 0,01 0,02 0,05 0,1 0,001 0,001 0,01 0,1 t [s] 1 10 0 10 preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 7 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0 1,2 1,4 1,6 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 瞬态热阻抗反向二极管 transientthermalimpedanceDiode,Reverse ZthJC=f(t) 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 100000 ZthJC : Diode Rtyp R[Ω] ZthJC [K/W] 10000 0,1 1000 i: 1 2 3 4 ri[K/W]: 0,048 0,264 0,256 0,232 τi[s]: 0,01 0,02 0,05 0,1 0,01 0,001 0,01 0,1 t [s] 1 100 10 preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 8 0 20 40 60 80 100 TC [°C] 120 140 160 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 接线图/circuit_diagram_headline 封装尺寸/packageoutlines Infineon preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 9 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD600R06ME3_S2 初步数据 PreliminaryData 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CU dateofpublication:2013-10-03 approvedby:MK revision:2.4 10