English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
EconoDUAL™3模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有温度检测NTC
EconoDUAL™3modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC
VCES = 600V
IC nom = 600A / ICRM = 1200A
典型应用
• 大功率变流器
• 电机传动
• 伺服驱动器
• UPS系统
• 风力发电机
TypicalApplications
• HighPowerConverters
• MotorDrives
• ServoDrives
• UPSSystems
• WindTurbines
电气特性
• 沟槽栅IGBT3
• Tvjop=150°C
• VCEsat带正温度系数
ElectricalFeatures
• TrenchIGBT3
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 高功率密度
• 绝缘的基板
• 标封装
MechanicalFeatures
• HighPowerDensity
• IsolatedBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
600
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 55°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
600
700
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1200
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
1650
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 9,60 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,45
1,60
1,70
1,90
V
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
6,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,68
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
39,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,15
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,10
0,11
0,12
µs
µs
µs
tr
0,09
0,095
0,10
µs
µs
µs
td off
0,67
0,71
0,73
µs
µs
µs
tf
0,07
0,075
0,075
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 300 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 600 A, VCE = 300 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 300 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 600 A, VCE = 300 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 600 A, VCE = 300 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,4 Ω
Tvj = 150°C
Eon
8,90
9,90
10,5
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 600 A, VCE = 300 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2400 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,4 Ω
Tvj = 150°C
Eoff
21,5
25,0
26,5
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
4200
3000
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,028
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
2
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
0,09 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 600
V
IF
600
A
IFRM
1200
A
I²t
18000
17000
特征值/CharacteristicValues
min.
typ.
max.
1,55
1,50
1,45
1,95
A²s
A²s
正向电压
Forwardvoltage
IF = 600 A, VGE = 0 V
IF = 600 A, VGE = 0 V
IF = 600 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 600 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
205
300
330
A
A
A
恢复电荷
Recoveredcharge
IF = 600 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
17,0
36,0
42,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 600 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
4,00
9,30
10,5
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,05
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
0,15 K/W
K/W
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 2,5
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
14,5
13,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
12,5
10,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,009
LsCE
20
nH
RCC'+EE'
1,10
mΩ
Tstg
-40
125
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,0
-
6,0
Nm
重量
Weight
G
345
g
Eon, Eoff, Erec Messungen mit Vce-clamping und zusätzlichem Snubber-Kondensator
Eon, Eoff, Erec measurements with Vce-clamping and additional snubber-condensator
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
4
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
1200
1200
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
800
800
IC [A]
1000
IC [A]
1000
600
600
400
400
200
200
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VCE [V]
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.4Ω,RGoff=2.4Ω,VCE=300V
1200
70
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
60
1000
50
800
E [mJ]
IC [A]
40
600
30
400
20
200
0
10
5
6
7
8
VGE [V]
9
10
0
11
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
5
0
200
400
600
IC [A]
800
1000
1200
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=600A,VCE=300V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
200
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
160
ZthJC : IGBT
0,1
E [mJ]
ZthJC [K/W]
120
80
0,01
40
i:
1
2
3
4
ri[K/W]: 0,0054 0,0297 0,0288 0,0261
τi[s]:
0,01
0,02
0,05
0,1
0
0
4
8
12
RG [Ω]
16
20
0,001
0,001
24
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.4Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1400
1200
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1200
1000
1000
800
IF [A]
IC [A]
800
600
600
400
400
200
200
0
0
100
200
300
400
VCE [V]
500
600
0
700
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
6
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
2,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=2.4Ω,VCE=300V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=600A,VCE=300V
18
14
Erec, Tvj = 125°C
Erec, Tvj = 150°C
16
Erec, Tvj = 125°C
Erec, Tvj = 150°C
12
14
10
8
10
E [mJ]
E [mJ]
12
8
6
6
4
4
2
2
0
0
200
400
600
IF [A]
800
1000
0
1200
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
0
4
8
12
RG [Ω]
16
20
24
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
1
100000
ZthJC : Diode
Rtyp
10000
R[Ω]
ZthJC [K/W]
0,1
0,01
1000
i:
1
2
3
4
ri[K/W]: 0,009 0,0495 0,048 0,0435
τi[s]:
0,01 0,02
0,05 0,1
0,001
0,001
0,01
0,1
t [s]
1
100
10
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
7
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
Infineon
preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R06ME3
使用条件和条款
使用条件和条款
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preparedby:CU
dateofpublication:2013-11-04
approvedby:MK
revision:3.1
9