1N5221 1N5281.aspx?ext=

1N5221-1N5281
SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. Part numbers listed indicate a tolerance of ±20% with guaranteed limits on only, VZ, IR and
VF.
Devices with guaranteed limits on all six parameters are indicated by suffix A for ±10% tolerance, suffix B for a ±5% tolerance, suffix C for a 2% tolerance and suffix D for a 1%
tolerance.
MAXIMUM RATINGS
Operating and Storage Temperature
DC Power Dissipation
Power Derating
Forward Voltage @ 200mA
-65°C to + 200°C
500 mW
3.33 mW/C° above 25°C
1.1 Volts
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part Number (1)
1N5221
1N5222
1N5223
1N5224
1N5225
1N5226
1N5227
1N5228
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
1N5236
1N5237
1N5238
1N5239
1N5240
1N5241
1N5242
1N5243
1N5244
1N5245
1N5246
1N5247
1N5248
1N5249
1N5250
1N5251
1N5252
1N5253
1N5254
1N5255
1N5256
1N5257
1N5258
1N5259
1N5260
Nominal
Zener Voltage
VZ @ IZT
Volts
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Test
Current
IZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
Max Reverse Leakage Current
Max Zener Impedance
(2)
A&B Suffix Only
ZZT @ IZT
Ohms
ZZT @ IZK=0.25mA
Ohms
30
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
A, B, & D Suffix
Only
IR
VR
µA
@
Volts
100
100
75
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
A
B,C &D
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
1.9
1.9
2.9
3.3
3.8
4.8
5.7
6.2
6.2
6.7
7.6
8.0
8.7
9.4
9.5
10.5
11.4
12.4
13.3
13.3
14.3
16.2
17.1
18.1
20
20
22
24
26
29
31
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
Non Suffix
IR @ VR Used For
Suffix A
µA
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
αVZ (%/°C)(3)
200
200
150
150
100
100
100
75
50
50
50
50
50
50
30
30
30
30
30
30
30
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
-0.085
-0.085
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
±0.055
±0.030
±0.030
+0.038
+0.038
+0.045
+0.050
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
Rev. 20120712
1N5221-1N5281
SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
Part Number (1)
1N5261
1N5262
1N5263
1N5264
1N5265
1N5266
1N5267
1N5268
1N5269
1N5270
1N5271
1N5272
1N5273
1N5274
1N5275
1N5276
1N5277
1N5278
1N5279
1N5280
1N5281
Nominal
Zener Voltage
VZ @ IZT
Volts
47
51
56
60
62
68
75
82
87
91
100
110
120
130
140
150
160
170
180
190
200
Test
Current
IZT
mA
2.7
2.5
2.2
2.1
2.0
1.8
1.7
1.5
1.4
1.4
1.3
1.1
1.0
0.95
0.90
0.85
0.80
0.74
0.68
0.66
0.65
Max Reverse Leakage Current
Max Zener Impedance
A&B Suffix Only(2)
ZZT @ IZT
Ohms
ZZT @ IZK=0.25mA
Ohms
105
125
150
170
185
230
270
330
370
400
500
750
900
1100
1300
150
170
190
2200
2400
2500
1000
1100
1300
1400
1400
1600
1700
2000
2200
2300
2600
3000
4000
4500
4500
5000
5500
5500
6000
6500
7000
IR
µA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
A, B, & D Suffix
Only
VR
@
Volts
Non Suffix
IR @ VR Used For
Suffix A
µA
A
B,C&D
34
37
41
44
45
49
53
59
65
66
72
80
86
94
101
108
116
123
130
137
144
36
39
43
46
47
52
56
62
68
69
76
84
91
99
106
114
122
129
137
144
152
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
αVZ (%/°C)(3)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
+0.098
+0.099
+0.099
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” minimum lead length from the case.
NOTE 2: The zener impedance is derived from the 60HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current
(IZT or I ZK) is superimposed on IZT or I ZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby eliminating unstable units.
NOTE 3: Temperature coefficient (αVZ). Test conditions for temperature coefficient are a follows:
a.
IZT = 7.5 mA, T1 = 25°C,
T2 = 125°C (1N5221A, thru 1N5242A, B.)
b.
IZT = Rated IZT, T1 = 25°C,
T2 = 125°C (1N5243A, B thru 1N5281A, B.)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
Rev. 20120712
High-reliability discrete products
and engineering services since 1977
1N5221-1N5281
SILICON ZENER DIODES
MECHANICAL CHARACTERISTICS
Case:
DO-35
Marking:
Body painted, alpha-numeric
Polarity:
Cathode band
Rev. 20120712
High-reliability discrete products
and engineering services since 1977
1N5221-1N5281
SILICON ZENER DIODES
Rev. 20120712
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