Order this document by TIP41A/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) — TIP41A, TIP42A VCEO(sus) = 80 Vdc (Min) — TIP41B, TIP42B VCEO(sus) = 100 Vdc (Min) — TIP41C, TIP42C • High Current Gain — Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc • Compact TO–220 AB Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol TIP41A TIP42A TIP41B TIP42B TIP41C TIP42C Unit Collector–Emitter Voltage VCEO 60 80 100 Vdc Collector–Base Voltage VCB 60 80 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 6 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 65 0.52 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 Watts W/_C E 62.5 mJ TJ, Tstg – 65 to + 150 _C Unclamped Inductive Load Energy (1) Operating and Storage Junction Temperature Range *Motorola Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 – 80 – 100 VOLTS 65 WATTS CASE 221A–06 TO–220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W Thermal Resistance, Junction to Case RθJC 1.92 _C/W (1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO(sus) 60 80 100 — — — Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) TIP41A, TIP42A TIP41B, TIP41C TIP42B, TIP42C ICEO — — — 0.7 0.7 0.7 mAdc — — — 400 400 400 IEBO — 1.0 mAdc hFE 30 15 — 75 — VCE(sat) VBE(on) — 1.5 Vdc — 2.0 Vdc fT hfe 3.0 — MHz 20 — — µAdc ICES TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector–Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) Base–Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) 300 µs, Duty Cycle PD, POWER DISSIPATION (WATTS) (1) Pulse Test: Pulse Width TA 4.0 TC 80 3.0 60 2.0 40 1.0 20 0 0 2.0%. TC TA 0 20 40 60 100 80 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating VCC + 30 V RC 0.7 0.5 RB – 9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% D1 –4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA Figure 2. Switching Time Test Circuit t, TIME ( µs) SCOPE +11 V 0 TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 µs 2 2.0 0.3 0.2 tr 0.1 0.07 0.05 0.03 0.02 0.06 td @ VBE(off) ≈ 5.0 V 0.1 0.4 0.6 1.0 0.2 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 Figure 3. Turn–On Time Motorola Bipolar Power Transistor Device Data 6.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) 0.05 1.0 0.2 1.0 0.5 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 100 50 200 1.0 k 500 Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 0.5 ms 5.0 1.0 ms 3.0 2.0 1.0 0.5 0.3 0.2 TJ = 150°C SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 5.0 ms v TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C 0.1 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _ C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 40 10 20 60 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 80 100 Figure 5. Active–Region Safe Operating Area 5.0 300 ts t, TIME ( µs) 1.0 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf Cib 100 70 Cob 50 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn–Off Time Motorola Bipolar Power Transistor Device Data 4.0 6.0 30 0.5 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 7. Capacitance 3 hFE, DC CURRENT GAIN 300 200 VCE = 2.0 V TJ = 150°C 100 70 50 25°C 30 20 10 7.0 5.0 0.06 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 500 – 55°C 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 2.0 TJ = 25°C 1.6 1.2 IC = 1.0 A 0.4 0 10 6.0 20 θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 IC, COLLECTOR CURRENT ( µA) 1000 *APPLIES FOR IC/IB ≤ hFE/4 + 1.5 + 1.0 + 0.5 + 25°C to + 150°C * θVC FOR VCE(sat) 0 – 55°C to + 25°C – 0.5 + 25°C to + 150°C – 1.0 θVB FOR VBE – 1.5 – 55°C to + 25°C – 2.0 – 2.5 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 Figure 10. “On” Voltages Figure 11. Temperature Coefficients VCE = 30 V TJ = 150°C 100°C 25°C 100 IC = ICES 10–1 REVERSE 10–3 – 0.3 – 0.2 – 0.1 + 2.0 IC, COLLECTOR CURRENT (AMP) 103 4 500 IC, COLLECTOR CURRENT (AMP) FORWARD 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7 R BE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) 1.6 10–2 50 100 200 300 IB, BASE CURRENT (mA) + 2.5 TJ = 25°C 101 30 Figure 9. Collector Saturation Region 2.0 102 5.0 A 0.8 Figure 8. DC Current Gain 0 0.06 2.5 A 6.0 10 M VCE = 30 V 1.0 M IC = 10 x ICES IC ≈ ICES 100 k 10 k IC = 2 x ICES 1.0 k 0.1 k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *TIP41A/D* TIP41A/D