Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A 1.0 4.1±0.2 0.4 0.85 (Ta=25˚C) 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 ■ Absolute Maximum Ratings 1.0 1.5 R0.9 R0.9 7 ● 2.5±0.1 0. ● Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 6.9±0.1 1.5 Features R ■ Unit: mm Symbol Collector to 2SB745 base voltage 2SB745A Collector to 2SB745 Ratings –35 VCBO –55 –35 VCEO emitter voltage 2SB745A –55 V VEBO –5 V Peak collector current ICP –200 mA Collector current IC –50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol Collector to base 2SB745 voltage 2SB745A Collector to emitter 2SB745 voltage 2SB745A Emitter to base voltage 2 2.5 1:Base 2:Collector 3:Emitter 1 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Collector cutoff current 3 V Emitter to base voltage ■ Electrical Characteristics 0.45±0.05 Unit Conditions ICBO VCB = –10V, IE = 0 ICEO VCE = –10V, IB = 0 min IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –5 –1 µA VCB = –5V, IE = 2mA 180 –35 V –55 V VCE(sat) IC = –100mA, IB = –10mA Base to emitter voltage VBE VCE = –1V, IC = –100mA – 0.7 Transition frequency fT VCB = –5V, IE = 2mA, f = 200MHz 150 Noise voltage NV FE nA V hFE VCE = –10V, IC = –1mA, GV = 80dB Unit –55 Forward current transfer ratio Rg = 100kΩ, Function = FLAT max –100 –35 VCBO * typ Collector to emitter saturation voltage *h 1.25±0.05 0.55±0.1 Parameter 700 – 0.6 –1 V V MHz 150 mV Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 1 Transistor 2SB745, 2SB745A PC — Ta IC — VCE –160 IC — I B –160 Ta=25˚C VCE=–5V Ta=25˚C –140 400 –140 IB=–350µA –120 350 250 200 150 100 –250µA –200µA –80 –150µA –60 –100µA –40 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –2 –40 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) IB — VBE – 0.1 25˚C Collector current IC (mA) –100 Base current IB (µA) –400 –300 –200 – 0.4 –100 VCE=–5V –700 –500 – 0.3 Ta=75˚C – 0.5 VCE(sat) — IC –120 VCE=–5V Ta=25˚C –600 – 0.2 Base current IB (mA) IC — VBE –800 –25˚C –80 –60 IC/IB=10 –30 –10 –3 –1 – 0.3 –40 Ta=75˚C 25˚C – 0.1 –20 –100 –25˚C – 0.03 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 0 Base to emitter voltage VBE (V) – 0.4 – 0.8 –1.2 hFE — IC Transition frequency fT (MHz) Ta=75˚C 25˚C –25˚C 200 100 400 350 300 250 200 150 100 50 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 –3 –10 –30 –100 20 VCB=–5V Ta=25˚C 450 500 –1 Collector current IC (mA) Cob — VCB VCE=–5V 0 0.1 – 0.01 – 0.1 – 0.3 fT — I E 500 300 –2.0 Base to emitter voltage VBE (V) 600 400 –1.6 Collector output capacitance Cob (pF) 0 Forward current transfer ratio hFE –60 0 0 Collector to emitter saturation voltage VCE(sat) (V) 20 –80 –20 0 0 2 –100 –50µA –20 50 –120 –300µA –100 300 Collector current IC (mA) 450 Collector current IC (mA) Collector power dissipation PC (mW) 500 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 18 16 14 12 10 8 6 4 2 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Transistor 2SB745, 2SB745A NV — VCE NV — VCE 160 Rg=100kΩ 100 80 22kΩ 40 4.7kΩ 240 Rg=100kΩ 180 120 22kΩ 60 –10 –30 0 –1 –100 Collector to emitter voltage VCE (V) –3 –30 180 Rg=100kΩ 22kΩ – 0.03 –1 –1 300 VCE=–10V GV=80dB Function=RIAA 120 100 80 60 IC=–1mA 40 240 180 120 60 IC=–2mA – 0.1mA – 0.5mA 0 – 0.3 – 0.3 NV — Rg – 0.5mA Collector current IC (mA) – 0.1 Collector current IC (mA) VCE=–10V GV=80dB Function=FLAT 20 4.7kΩ – 0.1 22kΩ 40 0 – 0.01 –100 Noise voltage NV (mV) Noise voltage NV (mV) Noise voltage NV (mV) –10 140 240 – 0.03 60 20 160 VCE=–10V GV=80dB Function=RIAA 0 – 0.01 Rg=100kΩ 80 NV — Rg 300 60 100 Collector to emitter voltage VCE (V) NV — IC 120 120 4.7kΩ 4.7kΩ 20 –3 VCE=–10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) Noise voltage NV (mV) Noise voltage NV (mV) 120 60 160 IC=–1mA GV=80dB Function=RIAA IC=–1mA GV=80dB Function=FLAT 140 0 –1 NV — IC 300 – 0.1mA 0 1 3 10 30 100 Signal source resistance Rg (kΩ) 1 3 10 30 100 Signal source resistance Rg (kΩ) 3