SENSITRON SEMICONDUCTOR SHD374651 TECHNICAL DATA DATA SHEET 5160, REV. - LOW DROP SILICON RECTIFIER DESCRIPTION: 200V 50A Hermetic low drop rectifier in a SHD-3 HP package. Features: • • • • Designed for Battery Cell Bypass application Low package inductance High Surge Capacity Available with SX or SXV screening ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Symbol VRWM IF(AV) IFSM Maximum Thermal Resistance RθJC Max. Junction Temperature Max. Storage Temperature TJ Tstg Condition 8.3 ms, half Sine wave - Max. 200 50 300 Units V A A 1.0 °C/W -65 to +175 -65 to +175 °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 VF10 VF11 VF12 VF13 IR1 IR2 Max. Junction Capacitance CT Max. Reverse Recovery Time tRR Condition @ 5A, Pulse, TJ = 25 °C @ 10A, Pulse, TJ = 25 °C @ 25A, Pulse, TJ = 25 °C @ 50A, Pulse, TJ = 25 °C @ 100A, Pulse, TJ = 25 °C @ 5A, Pulse, TJ = -55 °C @ 10A, Pulse, TJ = -55 °C @ 25A, Pulse, TJ = -55 °C @ 50A, Pulse, TJ = -55 °C @ 5A, Pulse, TJ = 125 °C @ 10A, Pulse, TJ = 125 °C @ 25A, Pulse, TJ = 125°C @ 50A, Pulse, TJ = 125 °C @VR = 200V, Pulse, TJ = 25 °C @VR = 200V, Pulse, TJ = 125 °C @VR = 10V, TC = 25 °C fSIG = 1MHz, VSIG = 100mV (p-p) IF = 0.5A, IR = 1A, IRR = 0.25A, TJ = 25 °C Max. 0.850 0.875 0.915 0.965 1.025 0.940 0.965 1.040 1.090 0.715 0.750 0.815 0.865 10 Units V V V V V V V V V V V V V μA 0.5 mA 400 pF 2 µs © 2010 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • • PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • [email protected] • SENSITRON SEMICONDUCTOR SHD374651 TECHNICAL DATA DATA SHEET 5160, REV. - MECHANICAL DIMENSIONS: In Inches / mm SHD-3 HP DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. © 2010 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • • PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • [email protected] •