Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit: mm 5.9±0.2 4.9±0.2 ● ● 8.6±0.2 ■ Features High transition frequency fT. Small collector output capacitance Cob. +0.3 0.7–0.2 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –85 V Collector to emitter voltage VCEO –85 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.2 +0.2 0.45–0.1 0.45–0.1 1.27 1.27 1 2 3 3.2 ■ Absolute Maximum Ratings 13.5±0.5 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package (Ta=25˚C) Symbol Conditions min typ max Unit –10 µA Collector cutoff current ICEO VCE = –60V, IB = 0 Collector to base voltage VCBO IC = –100µA, IE = 0 –85 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 –85 V Emitter to base voltage VEBO IE = –100µA, IC = 0 –4 V Forward current transfer ratio hFE VCE = –5V, IC = –10mA 60 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Transition frequency fT VCB = –5V, IE = 10mA, f = 200MHz 500 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF – 0.5 V 1 Transistor 2SA1487 PC — Ta IC — VCE 1.2 IC — VBE 60 –120 VCE=–5V IB=–500µA –450µA 50 0.8 0.6 0.4 0.2 –400µA 40 –350µA –300µA 30 –250µA 20 –200µA –150µA 10 25˚C –100 Collector current IC (mA) 1.0 Collector current IC (mA) Collector power dissipation PC (W) Ta=25˚C Ta=75˚C –25˚C –80 –60 –40 –20 –100µA –50µA 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.03 –3 –10 –30 –100 Collector current IC (mA) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 1200 200 VCB=–5V f=200MHz Ta=25˚C 1000 160 120 Ta=75˚C 25˚C 80 –25˚C 40 0 – 0.1 – 0.3 –1.2 Base to emitter voltage VBE (V) fT — IE 800 600 400 200 0 –1 –3 –10 –30 Collector current IC (mA) Cob — VCB 6 12 VCE=–5V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 –1 10 240 IC/IB=10 – 0.01 – 0.1 – 0.3 8 hFE — IC –100 – 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 4 Transition frequency fT (MHz) 0 –100 1 3 10 30 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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