Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking ■ Absolute Maximum Ratings (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 2 3 2.0±0.2 ● 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Forward current transfer ratio hFE * VCB = 6V, IE = –1mA 65 Base to emitter voltage VBE VCB = 6V, IE = –1mA Common emitter reverse transfer capacitance Cre VCE = 6V, IC = 1mA, f = 10.7MHz Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz Power gain PG VCB = 6V, IE = –1mA, f = 100MHz *h FE 260 720 0.8 450 1.0 650 3.3 20 mV 24 pF MHz 5.0 dB dB Rank classification Rank C D hFE 65 ~ 160 100 ~ 260 1 Transistor 2SC3315 PC — Ta IC — VCE 30 300 200 100 160 IB=100µA 120 80µA 60µA 80 40µA 40 Ta=75˚C –25˚C 20 15 10 5 20µA 0 40 60 80 100 120 140 160 0 0 2 Forward current transfer ratio hFE 30 10 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 1 3 10 30 0.4 0.5 0 30 100 Collector to base voltage VCB (V) 2.0 1000 Ta=75˚C 150 25˚C –25˚C 100 50 VCE=10V 800 6V 600 400 200 0.3 1 3 10 30 0 – 0.1 – 0.3 100 2.4 1.6 1.2 0.8 0.4 0 0.1 –3 –10 –30 –100 PG — IE 30 IC=1mA f=10.7MHz Ta=25˚C 2.0 –1 Emitter current IE (mA) 25 Power gain PG (dB) 1.0 Common emitter reverse transfer capacitance Cre (pF) 1.5 1.6 1200 200 Cre — VCE 2.0 1.2 1600 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.8 Base to emitter voltage VBE (V) VCE=6V Cob — VCB 10 0 1400 0 0.1 100 2.5 3 12 250 Collector current IC (mA) 1 10 fT — I E 300 IC/IB=10 0.3 8 hFE — IC 100 0.01 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 25 Collector current IC (mA) 200 400 0 Collector output capacitance Cob (pF) VCE=6V Ta=25˚C 0 2 IC — VBE 240 Collector current IC (mA) Collector power dissipation PC (mW) 500 f=100MHz Rg=50Ω Ta=25˚C VCE=10V 6V 20 15 10 5 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 Transistor 2SC3315 NF — IE 12 f=100MHz Rg=50kΩ Ta=25˚C Noise figure NF (dB) 10 8 6 4 2 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) 3