Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : Z (Ta=25˚C) Parameter Symbol Collector cutoff current 3 0 to 0.1 Symbol 1 2 (Ta=25˚C) Parameter 0.65±0.15 0.8 ■ Absolute Maximum Ratings 1.9±0.2 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.2 ● 1.1 –0.1 ● 0.65±0.15 0.4 –0.05 ■ Features +0.25 1.5 –0.05 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 0.1 µA 100 µA ICEO VCE = 10V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 * VCE = 10V, IC = 2mA 160 hFE2 VCE = 2V, IC = 100mA 90 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Noise voltage NV 110 mV Collector output capacitance Cob 3.5 pF Forward current transfer ratio *h FE1 VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 10V, IE = 0, f = 1MHz 460 0.3 V Rank classification Rank Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol ZQ ZR ZS 1 2SD601A Transistor PC — Ta IC — VCE 1200 Ta=25˚C 50 160 120 80 40 1000 140µA 40 120µA 100µA 30 80µA 60µA 20 40 60 80 100 120 140 160 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 Collector current IC (mA) 160 120 25˚C –25˚C 80 40 160 120 80 40 0 0 1.2 1.6 2.0 0 Base to emitter voltage VBE (V) 200 400 600 1000 –25˚C 200 100 0.3 1 3 10 10 3 1 0.3 25˚C 0.1 30 Collector current IC (mA) 100 Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 100 240 240 Noise voltage NV (mV) Transition frequency fT (MHz) Ta=75˚C 300 IC/IB=10 Collector current IC (mA) VCB=10V Ta=25˚C 25˚C 0 0.1 800 300 400 1.0 NV — IC VCE=10V 500 0.8 30 fT — I E 600 0.6 100 Base current IB (µA) hFE — IC 0.4 VCE(sat) — IC 240 0.8 0.2 Base to emitter voltage VBE (V) IC — I B VCE=10V 0.4 0 Collector to emitter voltage VCE (V) 200 0 400 0 0 IC — VBE Ta=75˚C 600 200 20µA 0 20 800 40µA 10 Ambient temperature Ta (˚C) Collector current IC (mA) Base current IB (µA) 200 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=160µA 0 2 IB — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 240 180 120 60 VCE=10V GV=80dB Function=FLAT 200 Ta=25˚C 160 Rg=100kΩ 120 80 22kΩ 4.7kΩ 40 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 10 30 100 300 Collector current IC (mA) 1000