TLE4983C-HT E6747 Data Sheet (603 KB, EN)

Programmable True power on sensor
Data Sheet Version 1.1
TLE4983C-HTN E6747
Features
• TPO True Power On functionality
• Increased BTPO range
• Mono-cell chopped Hall system
• TIM Twisted Independent Mounting
• Dynamic self-calibrating algorithm
• End-of-line programmable switching points
• TC of back-bias magnet programmable
• High sensitivity and high stability of the
magnetic switching points
PG-SSO-3-91
• High resistance to mechanical stress
• Digital output signal (voltage interface)
• Short-circuit protection
• Module style package with two 4.7/47 nF integrated capacitors
• Package: PG-SSO-3-91 with nickel plating
Type
Marking
Ordering Code
Package
TLE4983C-HTN E6747
83ACS3
SP0003-74272
PG-SSO-3-91
General information:
The TLE4983C is an active Hall sensor ideally suited for camshaft applications. Its basic
function is to map either a tooth or a notch into a unique electrical output state. It has an
electrical trimming option for post-fabrication trimming in order to achieve true power on
capability even in the case of production spreads such as different magnetic
configurations or misalignment. An additional self-calibration module has been
implemented to achieve optimum accuracy during normal running operation. It comes in
a three-pin package for the supply voltage and an open drain output.
Page 1 of 29
Pin configuration PG-SSO-3-91
Pin definition and Function
Pin No.
1
Symbol
VS
Function
Supply Voltage
2
3
GND
Q
Ground
Open Drain Output
Functional description:
The basic operation of the TLE4983C is to map a „high positive“ magnetic field (tooth)
into a “low” electrical output signal and to map a „low positive“ magnetic field (notch) into
a “high” electrical output. Optionally the other output polarity can be chosen by
programming the PROM. A magnetic field is considered as positive if the North Pole of a
magnet shows towards the rear side of the IC housing. Since it seems that also
backbias-reduced magnetic configurations still show significant flux densities in one
distinct direction the circuit will be optimised for one flux direction in order to provide an
optimal signal to noise behaviour.
For understanding the operation of the TLE4983C three different modes have to be
considered: Initial operation after power up: This mode will be referred to as „initial
mode“. Operation following the initialisation before having full information about the
target wheel: This mode will be referred to as “precalibrated mode”. Normal operation
with running target wheel: This mode will be referred to as „calibrated mode“.
Page 2 of 29
Initial mode:
The magnetic information is derived from a chopped Hall amplifier. The threshold
information comes from a PROM-register that may be programmed at any time, but only
once (no EEPROM). The magnetic information is compared against the threshold and
the output state is set correspondingly. Some hysteresis is introduced in order to avoid
false switching due to noise.
In case that there is no PROM-value available (PROM has not been programmed
before) the chip starts an auto-search for the actual magnetic value (SAR-mode). The
initial threshold value is set to this magnetic value. This feature can be used to find a
TPO-value for providing correct programming information to the chip simply by setting
the chip in front of a well-defined static target. In this case a moving target wheel is not
necessary.
In case there is a PROM value available, the open drain output will be turned on or off
by comparing the magnetic field against the pre-programmed value.
During rotation of the target wheel a self-calibration procedure is started in the
background. The IC memorises magnetic field values for adjusting the threshold to an
optimum value. The exact way of threshold adjustment is described in more detail in the
precalibrated mode.
Precalibrated mode:
In the precalibrated mode the IC permanently monitors the magnetic signal. To say it in
more detail, it searches for minimum (caused by a notch) and maximum (caused by a
tooth) values in the signal. Once the IC has found a pair of min / max values it calculates
the optimum threshold level and adjusts the system offset in such a way, that the
switching occurs on this level. The internal offset update algorithm checks also the
magnetical edge in that point in time when an offset update is to be released. Positive
updates of the offset are released only at magnetic rising edges, negative offset updates
only on magnetic falling edges. Otherwise an update on the wrong magnetic edge may
cause additional switching. The threshold adjustment is limited to increments of approx.
15mT per calibration in order to avoid totally wrong information caused by large signal
disturbances (EMC-events or similar). The optimum threshold level may differ depending
on the target wheel. For example, for regular gearwheels the magnetic signal is close to
a sinusoid and the optimum threshold value can be considered as 50% value, which is
the mean value between minimum and maximum signal. For camshaft wheels an
optimum threshold may be at a different percent-value in order to have minimum phase
error over airgap variations. See fig.4 for definition of this dynamic switching level.
In case that the initial PROM-value does not lead to a switching of the IC because it is
slightly out of the signal range the IC nevertheless does its switch value correction in the
background. After having corrected for a sufficient amount the IC will start its output
switching. The output switching includes some hysteresis in order to avoid false
switching. During 16 switching events updates (number of updates depend on the
magnetic signal) with 15mT are allowed.
Page 3 of 29
Every valid1 minimum or maximum will be considered. After the next 16 switching events
a single update of max. 15mT (in both directions) is allowed.
For this single update the highest maximum and lowest minimum is taken into
consideration.
If the IC has not been programmed yet, it uses the default 50% value between the
minimum and the maximum as switching level.
1
Valid means signal detection with DNC
Page 4 of 29
Calibrated mode:
After a certain number of switching events (32) the accuracy is considered to be quite
high. At this time the chip is switched into an averaging mode (= calibrated mode) where
only minor threshold corrections are allowed. In this mode a period of 32 switching
events is taken to find the absolute minimum and maximum within this period. Threshold
calculation is done with these minimum and maximum. A filter algorithm is implemented,
which ensures that the threshold will only be updated, if the adjustment value calculated
shows in the same direction over the last four consecutive periods. Every new
calculated adjustment value that shows in the same direction causes an immediate
update of the threshold value. If the direction of the calculated adjustment value
changes, there must be again four consecutive adjustment values in the same direction
for another update of the threshold value. Additionally there is an activation level
implemented, allowing the threshold to be adjusted only if a certain amount (normally
bigger than 1LSB) of adjustment is calculated. The threshold correction per cycle is
limited to 1 LSB. The purpose of this strategy is to avoid larger offset deviations due to
singular events. Also irregularities of the target wheel are cancelled out, since the
minimum and maximum values are derived over at least one full revolution of the wheel.
The output switching is done at the threshold level without visible hysteresis in order to
achieve maximum accuracy. Nevertheless the chip has some internal protection
mechanisms in order to avoid multiple switching due to noise.
Changing the mode:
Every time after power up the chip is reset into the initial mode. Subsequent modes
(precalibrated, calibrated) are entered consequently as described before. In addition,
two plausibility checks are implemented in order to enable some self-recovery strategy
in case of unexpected events.
First, there is a watchdog, which checks for switching of the sensor at a certain lower
speed limit. If for 12 seconds there is no switching at the output, the chip is reset into the
initial mode.
Second, the IC checks if there is signal activity seen by the digital logic and if there is no
outputswitching at the same time. If the digital circuitry expects that there should have
been 4 switching events and actually no switching has occurred at the output, the IC is
reset into the initial mode.
Reset:
There are several conditions, which can lead to a reset condition. For the IC behaviour
we have to distinguish between a “output hold mode”, a “long reset”, a “short reset” and
a “software reset”.
Output hold mode:
This operating mode means that the output is held in the actual state and there is no
reset on the digital part performed. This state will be released after the IC reaches his
normal operation condition again and goes back into the operating mode he was before.
The following conditions lead to the output hold mode:
• A drop in the supply voltage to a value less than 2.4V but higher than 2.0V for a time
not longer than 1µs .. 2µs.
Page 5 of 29
Long reset:
This reset means a total reset of the analogue as well as for the digital part of the IC.
The output is forced to its default state (“high”). This condition remains for less than
1ms. After this time the IC is assumed to run in a stable condition and enters the initial
mode where the output represents the state of the target wheel (PROM value).
The following conditions lead to a long reset:
• Power-on condition.
• Low supply voltage: drop of the supply voltage to values less than 2.4V for a time
longer than 1µs .. 2µs or drop of the supply voltage to values less than 2.0V.
Short reset:
This reset means a reset of the digital circuitry. The output memorizes the state he had
before the reset. This condition remains for approx. 1µs. After that time the chip is
brought into the initial mode (output stays “high” for approx. 200µs for an untrimmed IC).
Then the output is released again and represents the state of the target wheel (PROM
value). The following conditions lead to a short reset:
• Watchdog overflow: If there is no switching at the output for more than 12 seconds.
• If there are four min- or max-events found without a switching event at the output
Software reset:
This reset can be performed in the testmode through the serial-interface. The IC output
is then used as data output for the serial interface.
The following condition lead to a software reset:
• There is a reset applied through the serial Interface
Table 1 shows an overview over the behaviour of the output under certain conditions.
output hold mode
long reset
short reset
initial mode
precalibrated mode
calibrated mode
Unprogrammed
Noninverted
inverted
Qn-1
High
High
high (self
calibration)
Normal
Normal
-
Programmed
Noninverted
Inverted
Qn-1
Qn-1
High
High
normal TPO
inverted TPO
normal TPO
inverted TPO
Normal
Normal
… state of output before a reset occurs
Qn-1
normal TPO … “low” if B>BTPO ; “high” if B<BTPO
inverted TPO … “high” if B>BTPO ; “low” if B<BTPO
normal
… “low” if B>BThreshold ; “high” if B<BThreshold
inverted
… “high” if B>BThreshold ; “low” if B<BThreshold
Table1: Output behaviour under certain conditions
Page 6 of 29
Inverted
Inverted
Hysteresis concept:
There are two different hysteresis concepts implemented in the IC.
The first one is called visible hysteresis, meaning that the output switching levels are
changed between two distinct values (depending on the direction of the magnetic field
during a switching event), whenever a certain amount of the magnetic field has been
passing through after the last switching event. The visible hysteresis is used in the
precalibrated mode of unprogrammed sensors. See fig.1 for more details.
The second form of hysteresis is called hidden hysteresis. This means, that one cannot
observe a hysteresis from outside. If the value of the switching level does not change,
the output always switches at the same level. But inside the IC there are two distinct
levels close above and below the switching level, which are used to arm the output. In
other words if the value of the magnetic field crosses the lower of this hysteresis levels,
then the output will be able to switch if the field crosses the switching level. After this
switching event the output will be disabled until the value of the magnetic field crosses
one of the two hysteresis levels. If it crosses the upper hysteresis level, then the output
will be armed again and can switch if the magnetic field crosses the switching level. On
the other hand, if the magnetic field does not reach the upper hysteresis level, but the
lower hysteresis level will be crossed again after a switching event, then the output is
allowed to switch, so that no tooth will be lost. But please notice that this causes an
additional phase error. The hidden hysteresis is used for programmed sensors in
precalibrated and calibrated mode. For more details see fig.2
Page 7 of 29
B
Bon
Bhys
BTPO
Boff
B
t
Q
t
Fig. 1: Visible hysteresis valid for unprogrammed IC during precalibrated mode
Page 8 of 29
B
Bon
B
Bhys/2
Bcal
Boff
t
Q
t
Fig. 2 Hidden hysteresis valid for programmed IC
Page 9 of 29
Block diagram:
The block diagram is shown in fig.3. The IC consists of a spinning Hall probe (monocell
in the centre of the chip) with a chopped preamplifier. Next there is a summing node for
threshold level adjustment. The threshold switching is actually done in the main
comparator at a signal level of „0“. This means, that the whole signal is shifted by this
summing node in that way, that the desired switching level occurs at zero. This adjusted
signal is fed into an A/D-converter. The converter feeds a digital calibration logic. This
logic monitors the digitised signal by looking for minimum and maximum values and also
calculates correction values for threshold adjustment. The static switching level is simply
done by fetching a digital value out of a PROM. The dynamic switching level is done by
calculating a weighted average of min and max value. For example, a factor of
approximately 71% can be achieved by doubling the weight of the max value. Generally
speaking, a threshold level of Bcal = Bmin + (Bmax – Bmin) * k0 can be achieved by
multiplying max with the switching level k0 and min with (1-k0).
Serial interface:
The serial interface is used to program the chip. At the same time it can be used to
provide special settings and to read out several internal registers status bits. The
interface description consists of a physical layer and a logical layer. The physical layer
describes format, timing and voltage information, whereas the logical layer describes the
available commands and the meaning of bits, words and addresses.
Physical interface layer:
The data transmission is done over the VS-pin, which generates input information and
clock timing, and the out-pin Q, which delivers the output data. Generally the interface
function is disabled; this means, that in normal operation including normal supply
distortion the interface is not active and therefore the chip operates in its normal way. A
special initialisation sequence must be performed to enter the interface mode that is also
referred to as “testmode”. There are two possible ways to achieve the testmode. They
are called OpenPowerOn and OpenSyncVDD. For already programmed devices this
initialisation procedures to testmode are not possible. The IC is still in test mode after
programming the IC. It is possible to read out the programmed values as long as you do
not leave the test mode.
OpenPowerOn: For a short time after power on or reset the chip monitors the output
signal. The internal logic brings the output into a high impedance state, which will be a
logical “high” caused by the external pull-up resistor. If now the chip sees a logical “low”
(for at least 1ms), which is an output voltage lower than 0.3V, the chip enters the
testmode.
Data transmission: Serial transmission is done in words (LSB first). A logical „1“ is
represented by a long (2/3 of one period) „high“ voltage level (higher than 5V) on the
supply followed by a short (1/3 of one period) „low“ voltage level (lower than 5V),
whereas a logical „0“ is represented by a short „high“ level on the supply followed by a
long „low“ level. At the same time this high/low voltage combination, which forms in fact
a bit, acts as a serial interface clock which clocks out logical high / low values on the
output. Due to the increased capacity a clocking period of 200µs is recommended
(standard value for 4.7nF capacitor: 100µs).
Page 10 of 29
See fig.5 for a more detailed timing diagram. End of word is indicated by a long (we
recommend longer than 200µs, first 30µs should be higher than 5V and the rest lower
than 5V) „low” supply. Please note, that for communicating 13 bits of data 14 VS-pulses
are necessary. If more than 14 input bits are transmitted the output bits are irrelevant
(transmission buffer empty) whereas the input bits remain valid and start overwriting the
previously transmitted bits. In any case the last 14 transmitted bits are interpreted as
transmitted data word (13 bits) + 1 stop bit. End of communication is signalled by a long
„high“ voltage level. A new communication has to be set up by a new initialisation
sequence.
Programming the PROM:
One possibility for programming the static threshold value is to run the IC on a testbench
(or in the car), to wait until the IC has reached the calibrated mode and then simply to
issue the copy commands, which transfers the calibrated threshold value into the
PROM.
Use the following procedure for this type of programming:
1) Apply an oscillating magnetic field with a suitable offset (Notice that for unfused
devices this offset lies in the middle of the maximum and minimum value of the
magnetic field).
2) Enter the testmode with the second procedure described in the chapter “Physical
interface layer”.
3) Wait until the IC has reached the calibration mode.
4) Choose a k-factor and supply a programming current to the output.
For details see document: “How to program TLE498x”.
5) Write the two following bit-combinations via the serial interface:
101XXXXXk2k1k0I1
1011111111111
Here ki indicate the 3bits of the k-factor (k2 … MSB and k0 … LSB) in dual-code.
This means: XXXX111 is equal to k0=0.7734 and XXXX011 is equal to k0=0.5234.
The bit I is the so called Inverting bit, which determines either the output switches
inverse to the applied magnetic field (I=”0”) or not (I=”1”).
6) Leave the testmode by writing a long “high” voltage level.
Page 11 of 29
A second form of programming the static threshold value is to bring the IC in front of a
target, which delivers a static magnetic field with a suitable strength and perform a
power on by forcing the output to a low state for at least 1ms. This brings the chip in the
testmode and he starts immediately a successive approximation and adjusts the value
of the offset-DAC to the switching level that corresponds to the field strength.
Use the following procedure for this type of programming:
1) Apply a static magnetic field with a suitable strength.
2) Enter the testmode with the first procedure described in the chapter “Physical
interface layer”.
3) Wait until the IC has made the successive approximation and reached the right level
for the offset-DAC (at least 10 periods of the internal clock frequency after releasing
the output).
4) Choose a k-factor and supply a programming current to the output.
For details see document: “How to program TLE498x”.
5) Write the two following bit-combinations via the serial interface:
101XXXXXk2k1k0I1
1011111111111
Here ki indicate the 3bits of the k-factor (k2 … MSB and k0 … LSB) in dual-code.
This means: XXXX111 is equal to k0=0.7734 and XXXX011 is equal to k0=0.5234.
The bit I is the so called Inverting bit, which determines either the output switches
inverse to the applied magnetic field (I=”0”) or not (I=”1”).
6) Leave the testmode by writing a long “high” voltage level.
It has to be noted that the chip has increased power dissipation during programming the
PROM/fuses. The additional power is taken out of the output. Due to the PROM can not
be tested during the sensor production please be aware that there is natural
programming yield loss.
Furthermore there may be an influence from the programming equipment. Please
contact your local technical support for more details or see document: “How to program
TLE498x”.
Overvoltage protection:
The process used for production has a breakthrough voltage of approximately 27.5V.
The chip can be brought into breakthrough without damage if the breakthrough power
(current) is limited to a certain value. Usually destruction is caused by overheating the
device. Therefore for short pulses the breakthrough power can be higher than for long
duration stress. For example for load dump conditions an external protection resistor of
200 Ω is recommended in 12V-systems and 50 Ω in 5V-systems.
Page 12 of 29
OUT
clamping & reverse voltage
protection
Vs
overtemperature
& short-circuit
protection
hyst
comp
clamping
supply regulator
digital
supply
analog
supply
Hall
supply
main
comp
enable
n-channel
open drain
interface
spinning Hall probe
chopper
+
&
filter
-
digital
Tracking ADC
min
max
algorithm
offset
DAC
actual switching level
bias for temperature
&
technology compensation
oscillator
GND
Fig.3: Blockdiagram of TLE4983
Page 13 of 29
reset
PROM
K-factor
inv. bit
BTPO
Fig. 4: Dynamic threshold value
Fig. 5: Serial protocol
Page 14 of 29
Absolute maximum ratings:
Symbol
Name
VS
VQ
min typ max
-18
18
supply voltage
output OFF voltage
Unit
V
-24
24
V
1h with RSeries>=200Ω2
-26
26
V
5min with RSeries>=200Ω1
-28
28
V
1min with RSeries ≥ 200Ω1
-0.3
18
V
-18
24
V
1h with RLoad>=500Ω
-18
26
V
5min with RLoad>=500Ω
V
1h without RLoad
16
V
current internal limited by short circuit
protection ([email protected]<40°C)
18
V
current internal limited by short circuit
protection ([email protected]<40°C)
24
V
current internal limited by short circuit
protection ([email protected]<40°C)
50
mA
-1.0
VQ
output ON voltage
IQ
continuous output current
-50
Tj
junction temperature
-40
RthJA
thermal resistance junction-air
TS
storage temperature
B
magnetic field induction
Note:
Note
-50
°C
155
°C
5000h (not additive)
165
°C
2500h (not additive)
175
°C
500h (not additive)
195
°C
10x1h (additive to the other life
times)
190
K/W
150
°C
mT
no limit
Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ESD Protection
2
Parameter
Symbol
max
Unit
Remarks
ESD – protection
VESD
±4
kV
According to standard EIA/JESD22A114-B, Human Body Model (HBM).
Accumulated life time
Page 15 of 29
Operating range:
Symbol
VS
Name
min
max
Unit
3.3
18
24
V
V
26
V
155
°C
°C
5000h (not additive)
165
°C
2500h (not additive)
175
°C
operating supply
voltage
-40
Continuous
1h with RSeries>=200Ω;
extended limits for
parameters in characteristics
5min with RSeries>=200Ω;
extended limits for
parameters in characteristics
Tj
operating junction
temperature
Tcal
trimming temperature
15
35
°C
500h (not additive) reduced
signal quality permittable
(e.g. jitter)
VS=5/12V
IQ
continuous output ON
current
continuous output OFF
voltage
0
20
mA
VQmax=0.5V
-0.3
18
V
Continuous
-0.3
24
V
1h with RLoad>=500Ω
0
5
kHz
VQ
fB
tedge
B
BTPO
BAC_TPO
BAC_cal
Bover
k0
3
Note
magnetic signal
switching frequency
rise time of magnetic
edge
magnetic switching
level range
true power on range
magnetic signal swing
for TPO-function
magnetic signal swing
for calibrated mode
magnetic overshoot
adjustment range of
switching level
85
µs
-13
91
mT
-13
91
mT
6
80
mTpp
3
80
mTpp
10
% of BACcal
77.34
% of
BAC_cal
33.59
Encapsulated devices with BTPO=44mT and BHYS=0.5mT show minimum value of 5mTpp
Page 16 of 29
Measured between two rising
edges of the magnetic signal
Magnetic signal edge is not
allowed to rise faster
(otherwise tracking ADC is
not able to follow)
Allowed programmable TPOvalues; Hysteresis not
included (typ. BHys=1mT)
BTPO=33mT
BHYS = 0.75mT3
Switching point in calibrated
mode is determined by:
Bcal = Bmin + (Bmax – Bmin) * k0
k0 step size = 6.25%
Symbol
TCBTPO
∆TCBTPO
Name
Programmable
temperature coefficient
of BTPO
Deviation to
programmed
temperature coefficient
of BTPO
min
max
Unit
Note
-1200
0
ppm/K
Range to compensate
TCmagnet , typical -825ppm/K
-300
300
ppm/K
-3.75
3.75
%
Linear TC deviation
-40°C to 150°C 1
At -40°C and 150°C
See figure 6
1
±450ppm/K @ -40°C guaranteed by design refered to second order TCBTPO compensation.
Furthermore this compensation comprises the adjustment to second order effect of magnet
Note: In the operating range the functions given in the functional description are fullfiled
Figure 6: Deviation to programmed temperature coefficient of BTPO
Page 17 of 29
AC/DC characteristics:
Symbol
Name
min
typ
max
Unit
Note
VQsat
output saturation voltage
0.25
0.5
V
IQ = 20mA
IQleak
output leakage current
0.1
10
µA
VQ = 18V
IQshort
currentlimit for shortcircuit protection 30
50
80
mA
Tprot
junction temperature limit for output 195
protection
output rise time
4
210
230
°C
11
17
µs
VLoad = 4,5..24V
RLoad = 1kΩ, CLoad = 4,7nF
included in package
2.4
4
3.4
5.6
µs
µs
VLoad = 5V;
VLoad = 12V;
RLoad = 1kΩ, CLoad = 4,7nF
included in package
trise4
tfall5
output fall time
ISVmin
supply current @ 3.2V
6
7
mA
VS = 3.2V; extended limits for
parameters in characteristics
ISV
supply current @ 3.3V
6
7
mA
VS = 3.3V;
IS
supply current
5.6
7.5
mA
Ismax
supply current @ 24V
8.0
mA
VSclamp
Clamping voltage VS-Pin
24
27.5
V
1mA through clamping device
VQclamp
Clamping voltage Q-Pin
24
27.5
V
1mA through clamping device
VSreset
Analog reset voltage
ton
1.4
2.4
2.35
6
power on time
0.56
2.9
V
1
ms
8
0.75
td
9
delay time of output to magnetic
edge
8
-3.6
nwatch
temperature drift of delay time of
output to magnetic edge
watchdog edges
twatch
watchdog time
∆td
15
ms
22
µs
3.6
µs
4
-
12
s
4
RSeries>=200Ω
Time to achieve specified
accuracy. During this time the
output is locked7
Higher magnetic slopes and
overshoots reduce td, because
the signal is filtered internal.10
not additional to td
If nwatch min or max-events have
been found and there was no
change at the output a reset is
performed.
If there is no output change
during twatch a reset is performed.
value of capacitor: 4.7nF±10%;(excluded drift due to temperature and over lifetime); ceramic: X8R; maximum voltage: 50V
value of capacitor: 4.7nF±10%;(excluded drift due to temperature and over lifetime); ceramic: X8R; maximum voltage: 50V
6
trimmed IC.
7
output is in high-state.
8
untrimmed IC.
9
measured at Tj = 25°C; represents the influence of the production spread (corresponds to the 3σ-value).
10
measured with a sinusoidal-field magnetic-field with 10mTpp and a frequency of 1kHz.
5
Page 18 of 29
Symbol
Name
min
fclk
fchopper
∆k0
BOffset
clock frequency for digital part
typ
max
1.76
kHz
mT
Typ. value corresponds 1σ
130 162.5
mT
Typ. BODAC_0 = -16.3mT
Typ. BODAC_1023 = 113.8mT
Tj=25°C
full scale range of the offset-DAC
FSRODACtyp
full scale range of the offset-DAC
112.7 130 152.8
mT
BTPO_res
resolution of programmable
threshold in TPO mode
drift of BTPO-point
0.13
mT
∆BAC_cal
accuracy of threshold in calibration
mode
Bneff
effective noise value of the magnetic
switching points
output jitter is not affected by the
chopper frequency
%
FSRODAC
∆BTPO
Note
MHz
clock frequency used by the chopper
220
preamplifier
resolution of switching level
6.25
adjustment
internal offset
-2.2 ±0.35 2.2
104
Unit
-2
+3.4
mT
BTPO=33mT11
-2
2
%
percentage of BAC; BAC=10mTpp
sinusoidal signal12; systematic
deviation due to hysteresis in the
filter algorithm of 1.5% at
BAC=10mTpp not included;
Tj = 25°C; The magnetic noise is
normal distributed, nearly
independent to frequency and
without sampling noise or digital
noise effects. The typical value
represents the rms-value here
and corresponds therefore to 1σ
probability of normal distribution.
Consequently a 3σ value
corresponds to 0.3% probability
of appearance.
The typical value corresponds to
the rms-value at Tj = 175°C.
The max value corresponds to
the rms-values in the full
temperature range and includes
technological spreads.
33
55
µT
120
µT
Note: The listed AC/DC and magnetic characteristics are ensured over the operating
range of the integrated circuit. Typical characteristics specify mean values expected
over the production spread. If not other specified, typical characteristics apply at Tj = 25
°C and VS = 12 V.
11
This value shows the deviation from the programmed BTPO value and its temperature coefficient. Included are the package-effect, the deviation
from the adjusted temperature coefficient of the BTPO point (resolution of the temperature coefficient and spread of the technologie) and the drift
of the offset (over temperature and lifetime). Not included is the hysteresis in the initial mode. Included are the package-effect, the deviation from
the adjusted temperature coefficient of the BTPO point (resolution of the temperature coefficient and spread of the technologie) and the drift of the
offset (over temperature and lifetime). Not included is the hysteresis in the initial mode.
12
bigger amplitudes of signal lead to smaller values of ∆BAC_cal.
Page 19 of 29
Application circuit
1
3
2
for example: RL=1,2kΩ
RS=120Ω
1
3
2
for example: RP≥200Ω @ Vs=12V
RP≥50Ω @ Vs=5V
RL=1,2kΩ
Figure 7
Application Circuits TLE4983C
Page 20 of 29
Electro Magnetic Compatibility - (values depend on RSeries)
Additional Information:
Characterisation of Electro Magnetic Compatibility are carried out on sample base of one qualification lot.
Not all specification parameters have been monitored during EMC exposure. Only key parameters e.g.
switching current and duty cycle have been monitored.
Ref. ISO 7637-1; see test circuit of figure 8;
∆BPP = 10mT (ideal sinusoidal signal); VS=13.5V ± 0.5V, fB= 1000Hz; T= 25°C; RSeries ≥ 200Ω;
Parameter
Symbol
Level/typ
Status
Testpulse 1
VEMC
IV / -100V
C
Testpulse 2
IV / 100V
A13
Testpulse 3a
IV / -150V
A
Testpulse 3b
IV / 100V
A
Testpulse 4
IV / -7V
A
Ref. ISO 7637-2; 2nd edition 06/2004 see test circuit of figure 8;
∆BPP = 2mT (amplitude sinus signal); VS=13.5V ± 0.5V, fB= 1000Hz; T= 25°C; RSeries ≥ 200Ω;
Parameter
Symbol
Level/typ
Status
Testpulse 2a
VEMC
IV / 40V
A
Testpulse 5a
IV / 86.5V
C
Testpulse 5b
IV / 86.5V
A14
Note: Test criteria for status A: No missing pulse no additional pulse on the IC output
signal plus duty cycle and jitter are in the specification limits.
Test criteria for status B: No missing pulse no additional pulse on the IC output
signal. (Output signal “OFF” means switching to the voltage of the pull-up resistor).
Test criteria for status C: One or more parameter can be out of specification during
the exposure but returns automatically to normal operation after exposure is
removed.
Test criteria for status E: destroyed.
13
14
Valid during Vs is applied afterwards Status C, current consumption may be out of spec during testpulse
Suppressed Us*=35V
Page 21 of 29
Ref. ISO 7637-3; TP 1 and TP 2 ref. DIN 40839-3; see test circuit of figure 8;
∆BPP = 10mT (ideal sinusoidal signal); VS=13.5V ± 0.5V, fB= 1000Hz; T= 25°C; RSeries ≥ 200Ω;
Parameter
Symbol
Level/typ
Status
Testpulse 1
VEMC
IV / -30V
A
Testpulse 2
IV / 30V
A
Testpulse 3a
IV / -60V
A
Testpulse 3b
IV / 40V
A
Ref. ISO 11452-3; see test circuit of figure 8; measured in TEM-cell;
∆BPP = 4mT (ideal sinusoidal signal); VS=13.5V ± 0,5V, fB= 200Hz; T= 25°C; RSeries ≥ 200Ω;
Parameter
Symbol
Level/max
EMC field strength
ETEM-Cell
IV / 200V/m
Remarks
AM=80%, f=1kHz;
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Test condition for the trigger window: fB-field=200Hz, Bpp=4mT,
vertical limits are ±200mV and horizontal limits are ±200µs.
5V
RSeries
200Ω
VEMC
CInt-package
RLoad
47 nF
VS
GND
1kΩ
Q
CInt-package
Figure 8: Testcircuit for EMC-tests
Page 22 of 29
4.7 nF
CLoad
50pF
Package Dimensions
PG-SSO 3-91 (Plastic Green Single Small Outline)
Page 23 of 29
Position of the Hall Element
Page 24 of 29
Appendix:
Calculation of mechanical errors:
Magnetic Signal
Output Signal
ϕ
∆ϕ ∆ϕ
Figure 9: Systematic Error ϕ and Stochastic Error ∆ϕ
Systematic Phase Error ϕ
The systematic error comes in because of the delay-time between the threshold point and the time when
the output is switching. It can be calculated as follows:
ϕ=
360° • n
• td
60
ϕ ... systematic phase error in °
n ... speed of the camshaft-wheel in min-1
td ... delay time (see specification) in sec
Page 25 of 29
Stochastic Phase Error ∆ϕ
The stochastic phase error includes the error due to the variation of the delay time with temperature and
the error caused by the resolution of the threshold. It can be calculated in the following way:
∆ϕd
∆ϕcal
n
∂ϕ
...
...
...
...
∂B
∆td
...
∆BAC_cal ...
∆ϕd =
360° • n
• ∆td
60
∆ϕcal =
∂ϕ
• ∆BAC _ cal
∂B
stochastic phase error due to the variation of the delay time over temperature in °
stochastic phase error due to the resolution of the threshold value in °
speed of the camshaft wheel in min-1
inverse of the magnetic slope of the edge in °/T
variation of delay time over temperature in sec
accuracy of the threshold in T
Jitter (Repeatability)
The phase jitter is normally caused by the analogue
system noise. If there is an update of 1bit of the
offset-DAC due to the algorithm, what could happen
after a period of 16 teeth, then an additional step in
the phase occurs (see description of the algorithm).
This is not included in the following calculations. The
noise is transformed through the slope of the
magnetic edge into a phase error. The phase jitter is
determined by the two formulas:
B
∂B
∂ϕ
Bn_max
Bneff_typ
1σ
3σ
Noise
ϕ Jitter _ typ =
ϕ
Phase-Jitter
∂ϕ
• (Bneff _ typ )
∂B
ϕ Jitter _ max =
Figure 10: Phase-Jitter
Page 26 of 29
∂ϕ
• (Bn _ max )
∂B
ϕJitter_typ
ϕJitter_max
∂ϕ
∂B
Bneff_typ
Bn_max
...
...
...
typical phase jitter at Tj=25°C in ° (1Sigma)
maximum phase jitter at Tj=175°C in ° (3Sigma)
inverse of the magnetic slope of the edge in °/T
...
...
typical value of Bneff in T
maximum value of Bn in T
(1σ-value at Tj=25°C)
(3σ-value at Tj=175°C)
Example:
Assumption:
n = 3000 min-1
td = 14 µs
∆td = ±3 µs
∂B =
1 mT/°
∂ϕ
∆BAC_cal = ±0.2 mT (=2% of 10mT swing)
Bneff_typ = ±33 µT (1σ-value at T=25°C)
Bn_max = ±360 µT (3σ-value at T=170°C)
Calculation:
ϕ = 0.252°
∆ϕd = ±0.054°
∆ϕcal = ±0.2°
ϕJitter_typ = ±0.033°
ϕJitter_max = ±0.21°
...
...
...
...
...
systematic phase error
stochastic phase error due to delay time variation
stochastic phase error due to accuracy of the threshold
typical phase jitter (1σ-value at Tj=25°C)
maximum phase jitter (3σ-value at Tj=175°C)
Page 27 of 29
Appendix A: Marking & data matrix code information:
Product is RoHS (restriction of hadzardous substances) compliant when marked with
letter “G” in front or after the date code marking.
As mentioned in information note N° 136/03 a data matrix code with 8x18 fields
according to the ECC200 standard may be used for TLE4983C. Furthermore the
marking technique on the front side of the device may be changed from a mask to a
writing laser equipment. The information content (date code and device type) will hereby
not be changed.
Please refer to you Key account team or regional sales responsible if you need further
information
Example for data matrix code (rear side of sensor):
Comparison between mask writing vs. new laser writing (TLE 4941):
Mask Lasering
Writing Lasering
Page 28 of 29
Revision History:
Version 1.1
Previous Version: 1.1
23
25
Change: new package outline figure
Old package outline figure erased
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