Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 25 V Emitter-base voltage (Collector open) VEBO 7 V IC 0.5 A ICP 1 A PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (1.0) 4.5±0.1 4.1±0.2 0.45±0.05 0.55±0.1 3 2 (2.5) 1.25±0.05 Symbol Collector power dissipation 2.0±0.2 (0.85) Parameter * 2.4±0.2 ■ Absolute Maximum Ratings Ta = 25°C Peak collector current R 0.9 R 0.7 1.0±0.1 • Low collector-emitter saturation voltage VCE(sat) • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (1.5) 3.5±0.1 (0.4) ■ Features Collector current 2.5±0.1 6.9±0.1 (1.5) 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 25 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Base-emitter saturation voltage ICEO VCE = 20 V, IB = 0 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 10 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 Collector-emitter saturation voltage Transition frequency fT Collector output capacitance (Common base, input open circuited) Conditions VCB = 10 V, IE = 0, f = 1 MHz Cob Min Typ Max Unit V 0.1 µA 1 µA 340 0.6 V 90 6 MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00193BED 1 2SD0638 IC VCE 700 700 600 500 400 300 200 500 4 mA 400 3 mA 300 2 mA 200 1 mA 100 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) 0 4 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) 1 Ta = 75°C 25°C −25°C 0.1 1 10 0 20 0 2 75°C 0.1 0.01 0.01 0.1 1 160 120 80 40 −100 10 250 Ta = 75°C 200 25°C 150 −25°C 100 50 0.1 1 10 Collector current IC (A) ICBO Ta 104 IE = 0 f = 1 MHz Ta = 25°C 10 8 VCE = 10 V 0 0.01 10 VCE = 10 V 103 ICEO (Ta) ICEO (Ta = 25°C) 200 12 6 hFE IC Ta = −25°C 1 4 Base current IB (mA) 300 25°C Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 200 Cob VCB VCB = 10 V Ta = 25°C 2 16 10 fT I E Emitter current IE (mA) 300 Collector current IC (A) 240 −10 12 IC / IB = 10 Collector current IC (A) 0 −1 400 VBE(sat) IC 10 0.01 0.01 8 100 IC / IB = 10 0.1 500 Collector-emitter voltage VCE (V) VCE(sat) IC 100 600 100 Forward current transfer ratio hFE 0 VCE = 10 V Ta = 25°C 700 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 600 100 0 IC I B 800 Ta = 25°C Collector current IC (mA) 800 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 800 8 6 4 102 10 2 0 1 1 10 Collector-base voltage VCB (V) SJC00193BED 100 0 40 80 120 160 Ambient temperature Ta (°C) 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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