Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 11.0±0.5 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 70 V Collector to base voltage Collector to emitter voltage 2SC2497 50 VCEO 2SC2497A 0.75±0.1 0.5±0.1 0.5±0.1 4.6±0.2 V 60 1 Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A Collector current IC 1.5 A Collector power dissipation PC 1.2 *1 W 2 1.76±0.1 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-126B-A1 Package 3 5 *2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 20 V, IE = 0 1 µA ICEO VCE = 10 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 10 µA Collector to base voltage VCBO IC = 1 mA, IE = 0 VCEO IC = 2 mA, IB = 0 Collector cutoff current Collector to emitter voltage 2SC2497 2SC2497A Forward current transfer ratio * hFE VCE = 5 V, IC = 1 A VCE(sat) IC = 1.5 A, IB = 0.15 A Base to emitter saturation voltage VBE(sat) IC = 1.5 A, IB = 0.15 A fT Collector output capacitance Cob Note) *: Rank classification 188 V 50 V 60 Collector to emitter saturation voltage Transition frequency 70 Rank R S hFE 80 to 160 120 to 220 80 220 1 1.5 V V VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz VCB = 20 V, IE = 0, f = 1 MHz 35 pF Power Transistors 2SC2497, 2SC2497A PC T a IC VCE TC=25˚C 3.5 4 (1) 3 2 IB=50mA 3.0 45mA 40mA 35mA 30mA 2.5 2.0 25mA 1.5 20mA 15mA 1.0 10mA (2) 1 Collector to emitter saturation voltage VCE(sat) (V) (1)With a 100×100×2mm Al heat sink (2)Without heat sink 5 VCE(sat) IC 4.0 Collector current IC (A) Collector power dissipation PC (W) 6 0.5 0 5mA 0 0 40 80 120 160 0 2 4 6 8 10 12 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) VBE(sat) IC hFE IC IC/IB=10 10 3 1 0.3 TC=100˚C 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 fT I E IC/IB=10 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.03 0.1 0.3 300 TC=100˚C 100 –25˚C 25˚C 30 10 3 1 0.01 3 1 Collector current IC (A) 0.03 80 40 0 10 120 80 40 0 –0.01 –0.03 –0.1 –0.3 3 30 100 Collector to base voltage VCB (V) –3 –10 ICBO Ta 104 IC=10mA TC=25˚C 90 –1 Emitter current IE (A) VCB=40V 80 103 70 ICBO (Ta) ICBO (Ta=25˚C) 120 3 1 100 Collector to emitter voltage VCER (V) 160 1 0.3 160 VCER RBE IE=0 f=1MHz TC=25˚C 200 0.1 200 Collector current IC (A) Cob VCB 240 Transition frequency fT (MHz) 3 0.01 0.01 Collector output capacitance Cob (pF) VCB=5V f=200MHz TC=25˚C VCE=5V 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 240 10 3 Collector current IC (A) 60 50 40 102 30 10 20 10 0 0.1 1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 120 140 160 180 Ambient temperature Ta (˚C) 189 2SC2497, 2SC2497A Power Transistors Area of safe operation (ASO) 10 3 Single pulse TC=25˚C ICP IC t=1s 0.3 0.1 0.03 0.003 0.001 0.1 0.3 1 3 10 30 2SC2497A 0.01 2SC2497 Collector current IC (A) t=10ms 1 100 Collector to emitter voltage VCE (V) 190 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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