HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT April 1995 Features • • • • • Package Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = +150oC Ignition Energy Capable JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Applications • Automotive Ignition • Small Engine Ignition • Fuel Ignitor Symbol Description COLLECTOR This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. The development type number for this device is TA49023. GATE PACKAGING AVAILABILITY PART NUMBER PACKAGE HGTP14N40F3VL TO-220AB BRAND 14N40FVL EMITTER NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Breakdown Voltage RGE = 10kΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous VGE = 4.5V at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 VGE = 4.5V at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IGEM Open Secondary Turn-Off Current L = 2.3mH at +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO L = 2.3mH at +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO Drain to Source Avalanche Energy at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT Power Dissipation Derating TC > +25oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD HGTP14N40F3VL 420 420 UNITS V V 19 14 ±10 ±12 ±10 A A V V mA 17 12 330 83 0.67 -40 to +150 260 6 A A mJ W W/oC oC oC KV INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 407-727-9207 | Copyright © Intersil Corporation 1999 3-50 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 3407.2 Specifications HGTP14N40F3VL Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Clamp Bkdn. Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-off Time-Inductive Load Inductive Use Test Thermal Resistance SYMBOL MIN TYP MAX UNITS TC = +150oC 345 370 415 V TC = +25oC 350 375 420 V TC = -40oC 355 380 425 V IC = 10A TC = +150oC 350 385 430 V BVECS IC = 1.0mA TC = +25oC 24 - - V ICES VCE = 250V TC = +25oC - - 50 µA VCE = 250V TC = +150oC - - 250 µA IC = 10A VGE = 4.5V TC = +25oC - - 2.0 V TC = +150oC - - 2.3 V TC = +25oC 1.0 1.5 2.0 V - - ±10 µA ±12 - - V - 12 16 µs TC = +150oC 12 - - A TC = +25oC 17 - - A - 1.5 - oC/W BVCES BVCE(CL) VCE(SAT) TEST CONDITIONS IC = 10mA, VGE = 0V VGE(TH) IC = 1.0mA VCE = VGE IGES VGE = ±10V BVGES tD(OFF)I + tF(OFF)I UIS IGES = ±1.0mA RL = 32Ω, IC = 10A, RG = 25Ω, L = 550µH, VCL = 320V, VGE = 5V, TC = +125oC L = 2.3mH, VG = 5V, Figure 13 RθJC 3-51 HGTP14N40F3VL Typical Performance Curves FIGURE 1. TRANSFER CHARACTERISTICS (TYP.) FIGURE 2. SATURATION CHARACTERISTIC (TYP.) FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 4. OPEN SECONDARY CURRENT AS A FUNCTION OF INDUCTANCE (TYP.) FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR EMITTER VOLTAGE (TYP.) FIGURE 6. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE, vs PULSE DURATION 3-52 HGTP14N40F3VL Typical Performance Curves (Continued) FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE; TJ = +150oC (TYP.) FIGURE 9. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE (TYP.) FIGURE 11. LEAKAGE CURRENTS AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) FIGURE 8. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) FIGURE 10. INDUCTIVE CURRENT TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) FIGURE 12. THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE (TYP.) 3-53 HGTP14N40F3VL Test Circuits 2.3mH L = 550µH VDD C C PULSE GEN 1/RG = 1/RGEN + 1/RGE RG RGEN = 50Ω DUT G G DUT + VCC - 320V 5V RGE = 50Ω E E FIGURE 13. USE TEST CIRCUIT FIGURE 14. INDUCTIVE SWITCHING TEST CIRCUIT Handling Precautions for IGBT’s Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “†ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. † Trademark Emerson and Cumming, Inc. 3-54