Data Sheet

SO
D1
23W
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
Rev. 1 — 11 October 2011
Product data sheet
1. Product profile
1.1 General description
400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat
lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient
overvoltage protection in high-temperature applications.
1.2 Features and benefits
 Rated peak pulse power:
PPPM = 400 W (350 W for 3V3)
 Reverse standoff voltage range:
VRWM = 3.3 V to 64 V
 Reverse current: IRM = 0.001 A
 Very low package height: 1 mm
 High temperature stability Tj  185 C
 Small plastic package suitable for
surface-mounted design
 AEC-Q101 qualified
1.3 Applications





Power supply protection
Automotive application
Industrial application
Power management
High-temperature applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
PPPM
rated peak pulse power
VRWM
reverse standoff voltage
Conditions
[1][2]
[1]
In accordance with IEC 61643-321 (10/1000 s current waveform).
[2]
For PTVS3V3S1UTR: PPPM = 350 W
Min
Typ
Max
Unit
-
-
400
W
3.3
-
64
V
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Graphic symbol
[1]
1
2
2
1
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number[1]
Package
PTVSxS1UTR series
[1]
Name
Description
Version
-
plastic surface-mounted package; 2 leads
SOD123W
The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
4. Marking
Table 4.
PTVSXS1UTR_SER
Product data sheet
Marking codes
Type number
Marking code
Type number
Marking code
PTVS3V3S1UTR
C2
PTVS20VS1UTR
CL
PTVS5V0S1UTR
C3
PTVS22VS1UTR
CM
PTVS6V0S1UTR
C4
PTVS24VS1UTR
CN
PTVS6V5S1UTR
C5
PTVS26VS1UTR
CP
PTVS7V0S1UTR
C6
PTVS28VS1UTR
CR
PTVS7V5S1UTR
C7
PTVS30VS1UTR
CS
PTVS8V0S1UTR
C8
PTVS33VS1UTR
CT
PTVS8V5S1UTR
C9
PTVS36VS1UTR
CU
PTVS9V0S1UTR
CA
PTVS40VS1UTR
CV
PTVS10VS1UTR
CB
PTVS43VS1UTR
CW
PTVS11VS1UTR
CC
PTVS45VS1UTR
CX
PTVS12VS1UTR
CD
PTVS48VS1UTR
CY
PTVS13VS1UTR
CE
PTVS51VS1UTR
CZ
PTVS14VS1UTR
CF
PTVS54VS1UTR
D1
PTVS15VS1UTR
CG
PTVS58VS1UTR
D2
PTVS16VS1UTR
CH
PTVS60VS1UTR
D3
PTVS17VS1UTR
CJ
PTVS64VS1UTR
D4
PTVS18VS1UTR
CK
-
-
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
2 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PPPM
Parameter
Conditions
rated peak pulse power
Min
Max
Unit
[1][2]
-
400
W
[1]
-
see
Table 9
and 10
IPPM
rated peak pulse current
IFSM
non-repetitive peak forward single half-sine
current
wave; tp = 8.3 ms
-
50
A
Tj
junction temperature
-
185
C
Tamb
ambient temperature
55
+185
C
Tstg
storage temperature
65
+185
C
[1]
In accordance with IEC 61643-321 (10/1000 s current waveform).
[2]
For PTVS3V3S1UTR: PPPM = 350 W
Table 6.
ESD maximum ratings
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge
voltage
IEC 61000-4-2; level 4
(contact discharge)
Min
Max
Unit
-
30
kV
Per diode
VESD
[1]
[1]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Table 7.
ESD standards compliance
Standard
Conditions
Per diode
PTVSXS1UTR_SER
Product data sheet
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model)
> 8 kV
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
3 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
6. Thermal characteristics
Table 8.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
thermal resistance from
junction to solder point
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
-
220
K/W
[2]
-
-
130
K/W
[3]
-
-
70
K/W
[4]
-
-
18
K/W
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4]
Soldering point of cathode tab.
7. Characteristics
Table 9.
Characteristics per type; PTVS3V3S1UTR to PTVS7V0S1UTR
Tj = 25 C unless otherwise specified.
Type
number
PTVSxxx
S1UTR
Reverse
standoff
voltage
Breakdown voltage
VBR (V)
Reverse leakage current
VRWM (V)
IR = 10 mA
at VRWM
Max
Min
Typ
Max
Typ
Max
Typ
Max
IPPM (A) Typ
3V3
3.3
5.20
5.60
6.00
5
600
17
8.0
43.8
1.0
5V0
5.0
6.40
6.70
7.00
5
400
17
9.2
43.5
2.5
6V0
6.0
6.67
7.02
7.37
5
400
17
10.3
38.8
3.2
6V5
6.5
7.22
7.60
7.98
5
250
17
11.2
35.7
3.6
7V0
7.0
7.78
8.20
8.60
3
100
9
12.0
33.3
4.3
PTVSXS1UTR_SER
Product data sheet
IRM (A)
Clamping
voltage VCL (V)
at VRWM
Tj = 150 C
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
Temperature
coefficient
SZ (mV/K)
IZ = 5 mA
© NXP B.V. 2011. All rights reserved.
4 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
Table 10. Characteristics per type; PTVS7V5S1UTR to PTVS64VS1UTR
Tj = 25 C unless otherwise specified.
Type
number
PTVSxxx
S1UTR
Reverse
standoff
voltage
Breakdown voltage
VBR (V)
Reverse leakage current
VRWM (V)
IR = 1 mA
at VRWM
IRM (A)
Clamping
voltage VCL (V)
at VRWM
Tj = 150 C
Temperature
coefficient
SZ (mV/K)
IZ = 5 mA
Max
Min
Typ
Max
Typ
Max
Typ
Max
IPPM (A) Typ
7V5
7.5
8.33
8.77
9.21
0.2
50
2
12.9
31.0
5.0
8V0
8.0
8.89
9.36
9.83
0.03
25
2
13.6
29.4
5.5
8V5
8.5
9.44
9.92
10.40
0.01
10
0.5
14.4
27.8
6.5
9V0
9.0
10.00
10.55
11.10
0.005
5
0.5
15.4
26.0
7.1
10V
10
11.10
11.70
12.30
0.005
2.5
0.5
17.0
23.5
8.1
11V
11
12.20
12.85
13.50
0.005
2.5
0.5
18.2
22.0
9.2
12V
12
13.30
14.00
14.70
0.005
2.5
0.5
19.9
20.1
10.3
13V
13
14.40
15.15
15.90
0.001
0.1
0.5
21.5
18.6
11.4
14V
14
15.60
16.40
17.20
0.001
0.1
0.5
23.2
17.2
13.2
15V
15
16.70
17.60
18.50
0.001
0.1
0.5
24.4
16.4
14.1
16V
16
17.80
18.75
19.70
0.001
0.1
0.5
26.0
15.4
15.9
17V
17
18.90
19.90
20.90
0.001
0.1
0.5
27.6
14.5
16.4
18V
18
20.00
21.00
22.10
0.001
0.1
0.5
29.2
13.7
18.5
20V
20
22.20
23.35
24.50
0.001
0.1
0.5
32.4
12.3
20.0
22V
22
24.40
25.60
26.90
0.001
0.1
0.5
35.5
11.3
23.8
24V
24
26.70
28.10
29.50
0.001
0.1
0.5
38.9
10.3
24.9
26V
26
28.90
30.40
31.90
0.001
0.1
0.5
42.1
9.5
29.1
28V
28
31.10
32.80
34.40
0.001
0.1
0.5
45.4
8.8
30.6
30V
30
33.30
35.10
36.80
0.001
0.1
0.5
48.4
8.3
34.4
33V
33
36.70
38.70
40.60
0.001
0.1
0.5
53.3
7.5
37.5
36V
36
40.00
42.10
44.20
0.001
0.1
0.5
58.1
6.9
42.3
40V
40
44.40
46.80
49.10
0.001
0.1
0.5
64.5
6.2
48.1
43V
43
47.80
50.30
52.80
0.001
0.1
0.5
69.4
5.8
51.6
45V
45
50.00
52.65
55.30
0.001
0.1
0.5
72.7
5.5
55.2
48V
48
53.30
56.10
58.90
0.001
0.1
0.5
77.4
5.2
58.2
51V
51
56.70
59.70
62.70
0.001
0.1
0.5
82.4
4.9
62.5
54V
54
60.00
63.15
66.30
0.001
0.1
0.5
87.1
4.6
66.1
58V
58
64.40
67.80
71.20
0.001
0.1
0.5
93.6
4.3
71.4
60V
60
66.70
70.20
73.70
0.001
0.1
0.5
96.8
4.1
74.1
64V
64
71.10
74.85
78.60
0.001
0.1
0.5
103.0
3.9
80.0
PTVSXS1UTR_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
006aab319
150
006aac765
1.2
PPPM
IPP
(%)
PPPM(25°C)
100 % IPP; 10 μs
100
0.8
50 % IPP; 1000 μs
50
0.4
0
0.0
0
1.0
2.0
3.0
4.0
0
50
100
150
tp (ms)
Fig 1.
200
Tj (°C)
10/1000 s pulse waveform according to
IEC 61643-321
Fig 2.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab418
105
PPPM
(W)
104
(1)
(2)
103
102
10−1
1
10
102
103
104
tp (μs)
Tamb = 25 C
(1) PTVS5V0S1UTR to PTVS64VS1UTR
(2) PTVS3V3S1UTR
Fig 3.
Rated peak pulse power as a function of pulse duration; typical values
PTVSXS1UTR_SER
Product data sheet
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Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
6 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
I
−VCL −VBR −VRWM
V
−IRM
−IR
−
+
P-N
−IPP
−IPPM
Fig 4.
006aab324
V-I characteristics for a unidirectional TVS protection diode
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.9
1.5
1.1
0.9
1
0.6
0.3
3.7
3.3
2.8
2.4
2
1.05
0.75
Dimensions in mm
Fig 5.
PTVSXS1UTR_SER
Product data sheet
0.22
0.10
08-11-06
Package outline SOD123W
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
7 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
10. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number[2]
Package
Description
Packing quantity
3000
PTVSxS1UTR series
SOD123W
4 mm pitch, 8 mm tape and reel
[1]
For further information and the availability of packing methods, see Section 14.
[2]
The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
-115
11. Soldering
4.4
2.9
2.8
solder lands
solder resist
1.1 1.2
(2×) (2×)
2.1 1.6
solder paste
occupied area
1.1
(2×)
1.2
(2×)
Dimensions in mm
sod123w_fr
Reflow soldering is the only recommended soldering method.
Fig 6.
PTVSXS1UTR_SER
Product data sheet
Reflow soldering footprint SOD123W
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
8 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
12. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PTVSXS1UTR_SER v.1
20111011
Product data sheet
-
-
PTVSXS1UTR_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
9 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
PTVSXS1UTR_SER
Product data sheet
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Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
10 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PTVSXS1UTR_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
© NXP B.V. 2011. All rights reserved.
11 of 12
PTVSxS1UTR series
NXP Semiconductors
High-temperature 400 W Transient Voltage Suppressor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 October 2011
Document identifier: PTVSXS1UTR_SER