tisp1120f3dr

CO
M
PL
IA
NT
TISP1120F3D
*R
oH
S
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTOR
TISP1120F3D Overvoltage Protector
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
8-SOIC Package (Top View)
Low Voltage Overshoot Under Surge
Device Name
TISP1120F3D
1
8
G
NC
2
7
G
NC
3
6
G
R
4
5
G
T
Planar Passivated Junctions
- Low Off-State Current <10 µA
VDRM
V(BO)
V
V
-97
-120
MDXX AEB
NC - No internal connection
Device Symbol
Rated for International Surge Wave Shapes
R
T
IPPSM
Wave Shape
Standard
2/10
GR-1089-CORE
120
A
8/20
IEC 61000-4-5
70
10/160
TIA-968-A
60
10/700
ITU-T K.20/21/45
50
10/560
TIA-968-A
45
10/1000
GR-1089-CORE
35
G
SD1XAAa
Description
This dual forward-conducting unidirectional overvoltage protector is designed for the overvoltage protection of ICs used for the SLIC
(Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1120F3D
limits voltages that exceed these supply rails.
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current helps
prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are designed to
suppress and withstand the listed international lightning surges on any terminal pair.
This monolithic protection device is fabricated in an ion-implanted planar structure to ensure precise and matched breakover control, and is
virtually transparent to the system in normal operation.
How to Order
Device
Package
Carrier
Order As
Marking Code
Standard Quantity
TISP1120F3D
8-SOIC
Embossed Tape Reeled
TISP1120F3DR-S
1120F3
2500
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 2005 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1120F3D Overvoltage Protector
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage
Symbol
Value
Unit
VDRM
-97
V
IPPSM
2 x ±120
2 x ±70
2 x ±60
2 x ±50
2 x ±50
2 x ±45
2 x ±35
A
Non-repetitive peak impulse current (see Note 1)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 µs voltage waveshape)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
5/320 µs (TIA-968-A, 9/720 µs voltage waveshape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current, 0 °C < TA < 70 °C
1 s, 50 Hz
Initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTE:
ITSM
2 x 4.3
A
diT/dt
250
A/µs
TJ
-65 to +150
°C
Tstg
-65 to +150
°C
1. Initially the device must be in thermal equilibrium with 0 °C < T J < 70 °C. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics for Terminals T and R, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
Repetitive peak off-state current
V(BO)
Breakover voltage
IH
Holding current
Test Conditions
VD = ±V DRM
Min
Typ
Max
TA = 25 °C
±5
TA = 70 °C
±10
dv/dt = -250 V/ms, RSOURCE = 300 Ω
±123
IT = ±5 A, di/dt = ±30 mA/ms
Unit
µA
V
mA
±150
Electrical Characteristics for Terminals T and G or R and G, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
Repetitive peak off-state current
V(BO)
Breakover voltage
Test Conditions
VD = VDRM
Min Typ Max
TA = 25 °C
-5
TA = 70 °C
-10
Unit
µA
dv/dt = -250 V/ms, RSOURCE = 300 Ω
-120
V
dv/dt ≤ -1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt ≤ -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
-130
V
V(BO)
Impulse breakover voltage
I(BO)
Breakover current
IH
Holding current
VT
On-state voltage
IT = -5 A, tw = 100 µs
-3
V
VF
Forward voltage
IF = +5 A, tw = 100 µs
+3
V
VFRM
Peak forward recovery voltage
dv/dt = -250 V/ms, RSOURCE = 300 Ω
-100
IT = -5 A, di/dt = +30 mA/ms
-150
dv/dt ≤ +1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt ≤ +20 A/µs, Linear current ramp,
Maximum ramp value = +10 A
Off-state capacitance
f = 1 MHz, Vd = 1 V rms
mA
mA
+3.3
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85VDRM
CO
-600
V
-5
kV/µs
VD = -2 V
60
65
VD = -50 V
20
25
pF
JULY 2005 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1120F3D Overvoltage Protector
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
RθJA
Test Conditions
Junction to ambient thermal resistance
Min
Typ
Ptot = 0.8 W
5 cm2 FR4 PCB
Max
Unit
160
°C/W
Parameter Measurement Information
+i
I PPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
V(BO)
VT
I(BO)
IH
V (BR)M
V DRM
-v
I(BR)
V (BR)
V (BR)
I(BR)
IDRM
VD
ID
ID
VD
IDRM
+v
V DRM
V (BR)M
IH
I(BO)
VT
V(BO)
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
I PPSM
-i
Figure 1. Voltage-Current Characteristic for the Terminals T and R
All Measurements are Referenced to Terminal R
JULY 2005 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PM-TISP4xxx-001-a
TISP1120F3D Overvoltage Protector
Parameter Measurement Information (Continued)
+i
Quadrant I
Forward
Conduction
Characteristic
IPPSM
IFSM
IFRM
IF
VF
V (BR)M
VD
V DRM
-v
I(BR)
V (BR)
+v
ID
IDRM
IH
I(BO)
V(BO)
VT
IT
ITRM
ITSM
Quadrant III
IPPSM
Switching
Characteristic
-i
PM-TISP5xxx-001-a
Figure 2. Voltage-Current Characteristic for Terminals T and G or R and G
All Measurements are Referenced to Terminal G
JULY 2005 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
www.bourns.com
Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
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COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A. e 11/05 TSP0508