tisp30xxf3

oH
S
CO
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PL
IA
NT
TISP3072F3,TISP3082F3
*R
LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
TISP30xxF3 (LV) Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘3072F3
‘3082F3
D Package (Top View)
T
1
8
G
VDRM
V(BO)
NC
2
7
G
V
58
66
V
72
82
NC
3
6
G
R
4
5
G
NC - No internal connection
Planar Passivated Junctions
Low Off-State Current <10 µA
Device Symbol
Rated for International Surge Wave Shapes
Waveshape
Standard
2/10 µs
8/20 µs
10/160 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
FCC Part 68
GR-1089-CORE
10/700 µs
10/560 µs
10/1000 µs
T
R
ITSP
A
80
70
60
SD3XAA
50
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
45
35
.............................................. UL Recognized Component
Description
These low-voltage dual bidirectional thyristor protectors are
designed to protect ISDN applications against transients caused
by lightning strikes and a.c. power lines. Offered in two voltage
variants to meet battery and protection requirements, they are
guaranteed to suppress and withstand the listed international
lightning surges in both polarities. Transients are initially clipped
by breakdown clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The high crowbar
holding current helps prevent d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in
ion-implanted planar structures to ensure precise and matched
breakover control and are virtually transparent to the system in
normal operation.
How To Order
Device
Package
Carrier
TISP30xxF3
D, Small-outline
Tape And Reeled
Order As
TISP30xxF3DR-S
Insert xx value corresponding to protection voltages of 72 and 82
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, 0 °C < TA < 70 °C
‘3072F3
‘3082F3
Symbol
Value
Unit
VDRM
±58
±66
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
120
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
80
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
50
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
70
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
60
IPPSM
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
50
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
50
10/560 (FCC Part 68, 10/560 voltage wave shape)
45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
35
Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3)
50 Hz, 1 s
ITSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
A
55
4.3
A
diT/dt
250
A/µs
TJ
-65 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP ® must be in thermal equilibrium with 0 °C < TJ <70 ° C. The surge may be repeated after the TISP ® returns to its
initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for the T and R terminals, TA = 25 °C (Unless Otherwise Noted)
ID
Parameter
Repetitive peak offstate current
Off-state current
Coff
Off-state capacitance
IDRM
Test Conditions
Min
Typ
Max
Unit
VD = ±2VDRM, 0 °C < TA < 70 °C
±10
µA
VD = ±50 V
f = 100 kHz, Vd = 100 mV , VD = 0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
±10
µA
0.15
pF
0.05
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
Electrical Characteristics for T and G or R and G Terminals, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
VD = ±VDRM, 0 °C < TA < 70 °C
V(BO)
Breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
V(BO)
Impulse breakover
voltage
I(BO)
VT
IH
dv/dt
ID
Coff
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
Test Conditions
Min
Typ
‘3072F3
‘3082F3
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
RSOURCE = 50 Ω
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = -/+30 mA/ms
‘3072F3
‘3082F3
Unit
±10
µA
±72
±82
V
±86
±96
V
±0.15
A
V
A
±5
kV/µs
±0.1
Linear voltage ramp, Maximum ramp value < 0.85VDRM
Max
VD = ±50 V
f = 1 MHz, Vd = 0.1 V r.m.s., VD = 0
f = 1 MHz, Vd = 0.1 V r.m.s., VD = -5 V
f = 1 MHz, Vd = 0.1 V r.m.s., VD = -50 V
(see Notes 5 and 6)
±0.6
±3
82
49
25
±10
140
85
40
µA
pF
NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
Parameter
RθJA
Junction to free air thermal resistance
Test Conditions
Ptot = 0.8 W, TA = 25 °C
5 cm2, FR4 PCB
Min
Typ
Max
Unit
160
°C/W
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
V(BR)M
VDRM
-v
I(BR)
V(BR)
V(BR)
I(BR)
IDRM
ID
VD
ID
VD
IDRM
+v
VDRM
V(BR)M
IH
I(BO)
V(BO)
VT
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
Figure 1. Voltage-Current Characteristics for any Terminal Pair
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PMXXAA
TISP30xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3LAI
TC3LAF
Normalized to V(BR)
I(BR) = 100 µA and 25 °C
Normalized Breakdown Voltages
1.2
ID - Off-State Current - µ A
10
1
VD = 50 V
0·1
VD = -50 V
0·01
0·001
Positive Polarity
1.1
V(BR)M
V(BO)
1.0
V(BR)
0.9
-25
0
25
50
75
100
125
150
-25
0
TJ - Junction Temperature - °C
25
50
75
100
125
150
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3LAJ
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TC3LAL
100
Normalized to V(BR)
I(BR) = 100 µA and 25 °C
Negative Polarity
IT - On-State Current - A
Normalized Breakdown Voltages
1.2
1.1
V(BR)M
V(BO)
1.0
10
150 °C
V(BR)
25 °C
-40 °C
1
0.9
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 4.
125
150
1
2
1 3
4
5
6
7 8 9 0
VT - On-State Voltage - V
Figure 5.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
1.0
0.9
0.8
0.7
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
TC3LAH
0.6
0.5
1.3
Normalized Breakover Voltage
IH, I (BO) - Holding Current, Breakover Current - A
Typical Characteristics - R and G or T and G Terminals
I(BO)
0.4
0.3
IH
0.2
0.1
-25
0
25
50
75
100
125
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
1.2
Positive
1.1
Negative
1.0
0·001
150
TJ - Junction Temperature - °C
0·01
0·1
1
10
100
di/dt - Rate of Rise of Principle Current - A/µs
Figure 6.
100
TC3LAB
Figure 7.
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
TC3LAE
500
TC3LAD
Off-State Capacitance - pF
Off-State Capacitance - pF
Positive Bias
Negative Bias
100
Terminal Bias = 0
Terminal Bias = 50 V
Terminal Bias = -50 V
10
0·1
10
1
10
Terminal Voltage - V
Figure 8.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
50
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 9.
125
150
TISP30xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
SURGE CURRENT
vs
DECAY TIME
Maximum Surge Current - A
1000
TC3LAA
100
10
2
10
100
1000
Decay Time - µs
Figure 10.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3LAK
TC3LAG
VD = ±50 V
Normalized to V(BR)
Normalized Breakdown Voltages
1.2
ID - Off-State Current - µ A
10
1
0·1
0·01
0·001
Both Polarities
1.1
V(BR)M
V(BO)
1.0
V(BR)
0.9
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
1.3
TC3LAC
1.2
1.1
0·01
0·1
0
25
50
Figure 12.
NORMALIZED BREAKDOWN VOLTAGES
vs
RATE OF RISE OF PRINCIPAL CURRENT
1.0
0·001
-25
1
75
100
TJ - Junction Temperature - °C
Figure 11.
Normalized Breakover Voltage
I(BR) = 100 µA and 25 °C
10
di/dt - Rate of Rise of Principle Current - A/µs
Figure 13.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
100
125
150
TISP30xxF3 (LV) Overvoltage Protector Series
Thermal Information
VGEN = 250 Vrms
RGEN = 10 to 150 Ω
10
1
0·1
1
10
100
t - Current Duration - s
Figure 14.
THERMAL RESPONSE
Zθ JA - Transient Thermal Impedance - °C/W
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
TI3LAA
1000
TI3MAA
100
10
1
0·0001 0·001
0·01
0·1
1
10
100
1000
t - Power Pulse Duration - s
Figure 15.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Electrical Characteristics
The electrical characteristics of a TISP® device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend
on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which
generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters’ temperature coefficient,
the power dissipated and the thermal response curve, Zθ (see M. J. Maytum, “Transient Suppressor Dynamic Parameters.” TI Technical
Journal, vol. 6, No. 4, pp.63-70, July-August 1989).
Lightning Surge
Wave Shape Notation
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the
maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time . A 50 A, 5/310 µs wave shape would have a
peak current value of 50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP® device surge current graph comprehends the wave
shapes of commonly used surges.
Generators
There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g., 10/1000 µs open circuit voltage
and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit
current (e.g., 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically
produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape
produced is intermediate between the open circuit and short circuit values.
Current Rating
When the TISP® deviceswitches into the on-state, it has a very low impedance. As a result, although the surge wave shape may be defined in
terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP® surge capability. As an example, the
ITU-T K.21 1.5 kV, 10/700 µs open circuit voltage surge is changed to a 38 A, 5/310 µs current waveshape when driving into a short circuit.
Thus, the TISP® surge current capability, when directly connected to the generator, will be found for the ITU-T K.21 waveform at 310 µs on the
surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:
Standard
Open Circuit Voltage Short Circuit Current
ITU-T K.21
1.5 kV, 10/700 µs
37.5 A, 5/310 µs
ITU-T K.20
1 kV, 10/700 µs
25 A, 5/310 µs
IEC 61000-4-5, combination wave generator
1.0 kV, 1.2/50 µs
500 A, 8/20 µs
Telcordia GR-1089-CORE
1.0 kV, 10/1000 µs
100 A, 10/1000 µs
Telcordia GR-1089-CORE
2.5 kV, 2/10 µs
500 A, 2/10 µs
FCC Part 68, Type A
1.5 kV, <10/>160 µs
200 A,<10/>160 µs
FCC Part 68,Type A
800 V, <10/>560 µs
100 A,<10/>160 µs
FCC Part 68, Type B
1.5 kV, 9/720 µs
37.5 A, 5/320 µs
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value. A 1 kV
open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 Ω (1000/100). If the equipment has a series
resistance of 25 Ω, then the surge current requirement of the TISP® device becomes 29 A (1000/35) and not 100 A.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can
be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 7). An estimate of the
di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is
higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series
resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice, the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP® breakdown
region.
Capacitance
Off-state Capacitance
The off-state capacitance of a TISP® device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD,
and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C variation
of capacitance value with a.c. bias is shown in Figure 16. When VD >> Vd, the capacitance value is independent on the value of V d. The
capacitance is essentially constant over the range of normal telecommunication frequencies.
NORMALIZED CAPACITANCE
vs
RMS AC TEST VOLTAGE
1.05
AIXXAA
Normalized Capacitance
1.00
0.95
0.90
0.85
0.80
Normalized to Vd = 100 mV
0.75
DC Bias, V D = 0
0.70
1
10
100
1000
Vd - RMS AC Test Voltage - mV
Figure 16.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Longitudinal Balance
Figure 17 shows a three terminal TISP® device with its equivalent “delta” capacitance. Each capacitance, CTG, C RG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then CTG >C RG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (C TG -CRG). The line
capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +C RG/2.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
T
T
(CTG-CRG)
CTG
CRG
Equipment
G
Equipment
G
CTR
CTR
CRG
CRG
R
AIXXAB
R
CTG > CRG
Equivalent Unbalance
Figure 17.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.