tisp4a265h3bj

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TISP4A265H3BJ
ASYMMETRICAL BIDIRECTIONAL THYRISTOR SPD
TISP4A265H3BJ LCAS RLINE Protector
RING Line Protection for:
-LCAS (Line Card Access Switch)
-ADSL Interfaces
SMB Package (Top View)
Voltages Optimized for:
-Battery-Backed Ringing Circuits
Maximum Ringing a.c. .......................................... 90 V rms
Maximum Battery Voltage .......................................... -52 V
-ADSL Voltage ......................................................... ±23 V peak
-Minimum Ambient Temperature ...................................... 0 °C
Device
‘4A265
VDRM
V(BO)
V
V
+100
+125
-200
-265
2 MT2
MT1 1
MD4A265
Device Symbol
MT2
Rated for International Surge Wave Shapes
Wave Shape
Standard
ITSP
MT1
A
2/10 µs
GR-1089-CORE
SD4XAN
500
8/20 µs
IEC 61000-4-5
300
10/160 µs
TIA/EIA-IS-968
250
10/700 µs
ITU-T K.20/45/21
200
10/560 µs
TIA/EIA-IS-968
160
10/1000 µs
GR-1089-CORE
100
............................................... UL Recognized Component
Description
The TISP4A265H3BJ is an asymmetrical bidirectional overvoltage protector. It is designed to limit the peak voltages on the ring line terminal of
the ‘7581/2/3 LCAS (Line Card Access Switches). The TISP4A265H3BJ must be connected with bar-indexed terminal 1, MT1, to the protective
ground and terminal 2, MT2, to the ring conductor.
The TISP4A265H3BJ voltages are chosen to give adequate LCAS ring line terminal protection for all switch conditions. The most potentially
stressful condition is low level power cross when the LCAS switches are closed. Under this condition, the TISP4A265H3BJ limits the voltage
and corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches.
Under open-circuit ringing conditions, the line ring conductor will have high peak voltages. For battery backed ringing, the ring conductor will
have a larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. The TISP4A265H3BJ has a similar voltage asymmetry
and will allow the maximum possible ringing voltage, while giving the most effective protection. On a connected line, the tip conductor will
have much smaller voltage levels than the open-circuit ring conductor values. Here a TISP4xxxH3BJ series, symmetrical voltage protector
gives adequate protection.
Overvoltages are initially clipped by breakdown clamping. If sufficient current is available from the overvoltage, the breakdown voltage will rise
to the breakover level, which causes the device to switch into a low-voltage on-state condition. This switching action removes the high voltage
stress from the following circuitry and causes the current resulting from the overvoltage to be safely diverted through the protector. The high
holding (switch off) current helps prevent d.c. latchup as the diverted current subsides.
How to Order
Device
Package
Carrier
Order As
TISP4A265H3BJ
BJ (J-Bend DO-214AA/SMB)
R (Embossed Tape Reeled)
TISP4A265H3BJR-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A265H3BJ LCAS RLINE Protector
Description (Continued)
The TISP4A265H3BJ is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. This high (H)
current protection device is in a plastic SMBJ package (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For
alternative voltage and holding current values, consult the factory.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Repetitive peak off-state voltage, (see Note 1)
VDRM
Value
+100
-200
Unit
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/ 20 current combination wave generator)
300
10/160 µs (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 µs voltag e wave shape)
250
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/45/21)
ITSP
200
5/320 µs (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 µs voltage wave shape)
200
10/560 µs (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 µs voltag e wave shape)
160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
100
A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
55
16.7 ms (60 Hz) full sine wave
ITSM
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-sta te current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
60
A
2.2
di T /dt
400
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
See Figure 7 for voltage values at other temperatures.
Initially, the TISP4A265H3BJ must be in thermal equilibrium with T J = 25 °C.
The surge may be repeated after the TISP4A265H3BJ returns to its initial conditions.
See Figure 8 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 6 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Overload Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Maximum overload on-state current without open circuit, 50 Hz/60 Hz a.c. (see Note 6)
Symbol
1.6 s
5.0 s
1000 s
Unit
60
0.03 s
0.07 s
Value
IT(OV)M
40
8
A rms
7
2.2
NOTE 6: Peak overload on-state current during a.c. power cross tests of GR-1089-CORE and UL 1950/60950. These electrical stress
levels may damage the TISP4A265H3BJ silicon chip. After test, the pass criterion is either that the device is functional or, if it is
faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected as the device is a
permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A265H3BJ LCAS RLINE Protector
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
V(BO) Breakover voltage
I(BO)
IH
dv/dt
ID
Coff
Test Conditions
Min
VD = +100 V and -200 V
R SOURCE = 300 Ω
Breakover current
dv/dt = ±250 V/ms,
R SOURCE = 300 Ω
Holding current
I T = ±5 A, di/dt = +/-30 mA/ms
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V DRM
Off-state current
V D = ±50 V
f = 1 MHz,
Typ
Max
±5
TA = 85 °C
±10
+125
dv/dt = ±250 V/ms,
Off-state capacitance
TA = 25 °C
-265
.
µA
V
±0.15
±0.6
A
±0.15
±0.6
A
kV/µs
±5
TA = 85 °C
V d = 1 V rms, (see Note 7)
Unit
±10
VD = 98 V
25
30
VD = 50 V
30
36
VD = 10 V
45
54
VD = 5 V
52
62
VD = 2 V
60
72
VD = 1 V
65
79
VD = 0
71
86
VD = -1 V
65
79
VD = -2 V
58
69
VD = -5 V
48
57
VD = -10 V
40
48
VD = -50 V
26
31
VD = -100 V
20
24
Typ
Max
µA
pF
NOTE 7: To avoid possible voltage clipping, the TISP4A265H3BJ is tested with V D = +98 V in the positive polarity.
Thermal Characteristics
Parameter
Test Conditions
Min
EIA/JESD51-3 PCB, IT = ITSM(1000),
RΘJA
Junction to free air thermal resistance
113
TA = 25 °C, (see Note 8)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
Unit
°C/W
50
NOTE 8: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A265H3BJ LCAS RLINE Protector
Parameter Measurement Information
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
V(BO)
I(BO)
IH
IDRM
VDRM
-v
VD
ID
VD
ID
VDRM
+v
IDRM
IH
I(BO)
V(BO)
I
ITSM
Quadrant III
Switching
Characteristic
IPPSM
-i
PMXXAEA
Figure 1. Voltage-Current Characteristic for MT1 and MT2 Terminals
All Measurements are Referenced to the MT1 Terminal
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A265H3BJ LCAS RLINE Protector
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCHAG
100
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4HAF
VD = ±50 V
Normalized Breakover Voltage
|ID| - Off-State Current - µA
10
1
0·1
0·01
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
1.00
0.95
°C
0·001
1.05
-25
150
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
TA = 25 °C
tW = 100 µs
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4HAD
1.5
Normalized
or
Holding Current
IT - On-State Current - A
2.0
TC4HACBA
70
50
40
30
20
15
10
7
5
4
3
1.0
0.9
0.8
0.7
0.6
0.5
2
1.5
1
0.7
150
Figure 3.
Figure 2.
200
150
0
25
50
75
100
125
TJ - Junction Temperature - °C
0.4
1
1.5
2
3
4 5
VT - On-State Voltage - V
7
Figure 4.
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
10
-25
0
25
50
75
100
125
TJ - Junction Temperature - °C
Figure 5.
150
TISP4A265H3BJ LCAS RLINE Protector
Rating and Thermal Information
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON -REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4HAC
30
VGEN = 600 Vrms, 50/60 Hz
20
RGEN = 1.4*VGEN/ITSM(t)
15
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 ° C
10
9
8
7
6
5
4
3
2
1.5
0·1
1
10
100
1000
t - Current Duration - s
Figure 6.
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
IMPULSE RATING
vs
AMBIENT TEMPERATURE
TI4HADC
1.00
700
600
0.99
BELLCORE 2/10
500
400
Impulse Current - A
0.98
Derating Factor
TC4HAA
0.97
0.96
0.95
IEC 1.2/50, 8/20
300
FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
150
0.94
120
0.93
-40 -35 -30 -25 -20 -15 -10 -5
100
90
-40 -30 -20 -10 0
BELLCORE 10/1000
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 7.
10 20 30 40 50 60 70 80
TA - Ambient Temperature - ° C
Figure 8.
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A265H3BJ LCAS RLINE Protector
Typical Circuits
SW3
Ring
return
switch
Th1
1.25 A
Surge
withstand
e.g. SMP 1.25
Low
pass
filter
Th2
TISP4A265H3BJ
(Th2)
SW4
Ringing
access
switch
±23 V
(VADSL)
RRING
C1
ADSL
MODEM
High
pass
filter
R1
FGND
VBAT
Le7555
RBAT
RLINE
+74 V, -170 V
(V GEN)
Control
logic
+97 V, -193 V
(VRING )
F2
SW2
Break
switch
SLIC
TBAT
SCR, Diode
protection
TLINE
F1
RING
SW1
Break
switch
'7581 LCAS
TISP4125H3BJ
(Th1)
+23 V, -64 V
(VTIP )
TIP
Vbat
TRING
R2
86 V rms
(VRING )
-48 V
(V BAT )
Ring
generator
AI4A265A
Figure 9. Integrated Voice Data (IVD) System with Typical Operating Voltage Levels Indicated
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A265H3BJ LCAS RLINE Protector
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB Land Pattern
2.54
(.100)
2.40
(.095)
DIMENSIONS ARE:
2.16
(.085)
MILLIMETERS
(INCHES)
MDXX BID
Device Symbolization Code
Devices will be coded as below. Terminal 1 is indicated by an adjacent bar marked on the package body.
Device
Symbolization
Code
TISP4A265H3BJ
4A265H
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package
Carrier
Standard Quantity
SMB
Embossed Tape Reel Pack
3000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JANUARY 2002 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.