*R oH S CO M PL IA NT TISP4C115H3BJ THRU TISP4C350H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge - Low Off-State Capacitance Device Name SMB Package (Top View) VDRM V(BO) V V TISP4C115H3BJ † 90 115 TISP4C125H3BJ † 100 125 TISP4C145H3BJ † TISP4C165H3BJ 120 135 145 165 TISP4C180H3BJ † 145 180 TISP4C220H3BJ † TISP4C250H3BJ † 180 190 220 250 TISP4C290H3BJ † TISP4C350H3BJ † 220 275 290 350 R 1 2 T MD-SMB-004-a Device Symbol T R SD-TISP4xxx-001-a Rated for International Surge Wave Shapes IPPSM Wave Shape Standard 2/10 GR-1089-CORE 500 10/160 TIA-968-A 200 10/700 ITU-T K.20/21/45 150 10/560 TIA-968-A 100 10/1000 GR-1089-CORE 100 A ...................................................... UL Recognized Component Description This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. Please contact your Bourns representative if the protection voltage you require is not listed. How to Order Device Package Carrier TISP4CxxxH3BJ SMB Embossed Tape Reeled Insert xxx corresponding to device name. SEPTEMBER 2004 – REVISED JANUARY 2010 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Order As TISP4CxxxH3BJR-S Marking Code Std. Qty. 4CxxxH 3000 TISP4CxxxH3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol '4C115H3BJ '4C125H3BJ '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ Repetitive peak off-state voltage Value Unit ±90 ±100 ±120 ±135 ±145 ±180 ±190 ±220 ±275 V IPPSM ±500 ±200 ±150 ±100 ±100 A ITSM 30 2.1 A TJ -40 to +150 °C Tstg -65 to +150 °C VDRM Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 10/160 μs (TIA-968-A, 10/160 μs voltage wave shape) 5/310 μs (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/21/45) 10/560 μs (TIA-968-A, 10/560 μs voltage wave shape) 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) Non-repetitive peak on-state current (see Notes 1, 2 and 3) 20 ms, 50 Hz (full sine wave) 1000 s, 50 Hz Junction temperature Storage temperature range NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter IDRM V(BO) Repetitive peak off-state current Breakover voltage Test Conditions VD = VDRM dv/dt = ±250 V/ms, RSOURCE = 300 Ω dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±10 A/μs, Linear current ramp, Maximum ramp value = ±10 A V(BO) Impulse breakover voltage I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω VT On-state voltage IT = ±5 A,t w = 100 μs IH Holding current IT = ±5 A, di/dt = ±30 mA/ms CO Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = -2 V Max Unit TA = 25 °C TA = 85 °C Min ±5 ±10 μA '4C115H3BJ '4C125H3BJ '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ ±115 ±125 ±145 ±165 ±180 ±220 ±250 ±290 ±350 '4C115H3BJ '4C125H3BJ '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ ±125 ±135 ±155 ±175 ±190 ±230 ±260 ±300 ±360 ±600 ±150 Typ V mA ±3 V ±600 mA '4C115H3BJ '4C125H3BJ 50 '4C145H3BJ '4C165H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ 45 '4C290H3BJ '4C350H3BJ V pF 40 SEPTEMBER 2004 – REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4CxxxH3BJ Overvoltage Protector Series Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter RθJA Test Conditions Min Junction to ambient thermal resistance Max Unit 113 °C/W 265 mm x 210 mm populated line card, 50 4-layer PCB, IT = ITSM(1000) NOTE: Typ EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 4) 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. Parameter Measurement Information +i I PPSM Quadrant I Switching Characteristic ITSM ITRM IT V(BO) VT I(BO) IH V (BR)M V DRM -v I(BR) V (BR) I(BR) IDRM VD ID ID VD IDRM +v V DRM V (BR)M V (BR) IH I(BO) VT V(BO) IT ITRM ITSM Quadrant III Switching Characteristic I PPSM -i Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal SEPTEMBER 2004 – REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PM-TISP4xxx-001-a TISP4CxxxH3BJ TISP4xxxF3LM Overvoltage Protector Series Typical Characteristics NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC-TISP4C-002-a 1.1 Capacitance Normalized to VD = 2 V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TJ = 25 °C Vd = 1 Vrms 0.1 0.0 1 10 VD - Off-state Voltage - V 100 “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. SEPTEMBER 2004 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.