2.4kW GaN Boost Converter EVB Design Kit

RFJS3006FDK1
2.4kW GaN Boost
Converter EVB Design Kit
Key Features
■
■
■
■
■
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High Power: 2400W
On-board CCM Control
133kHz Switching Freq
Protection: OVP, OCP, OPL
Soft Start-up
High Efficiency
The RFJS3006FDK1 EVB Design Kit consists of a fully assembled evaluation
board functioning as Boost (step-up) converter working in Continuous
Conduction Mode (CCM). The purpose of this EVB is to enable users to easily
evaluate the rGaNHV™ RFJS3006F power switch performance in a typical
boost or PFC application and demonstrating its high efficiency at 2.4KW while
operating at a relatively high PWM frequency of 133kHZ.
This evaluation board consists of a RFJS3006F with a driver and a Sic Schottky
diode with an on-board CCM Controller IC and Inductor.
Block Diagram
SiC Schottky Diode
C3D20060D
Specifications
Rating
Max Output Power
2400W
Input Voltage Range
180 VDC to 240 VDC
Regulated Output
386V
Switching Frequency
133kHz
Maximum Efficiency
99%
Efficiency at 2.4kW
99%
Ordering Information
RFJS3006FDK1 - $1,125.00 each
2.4kW Boost EVB Design kit includes
4 extra samples of RFJS3006F
RFJS3006F
650V, 30A, 45mohm SSFET power
switch in IsoTO247 package
VIN
CIN
rGaN-HV Switch
RFJS3006F
COUT
RLOAD
PWM Controller
NCP16548D133R2G
Efficiency Curve
Boost EVB Power Stage Efficiency Vin=220V, Vout=386V
99.25
99.0
Efficiency
Parameter
98.75
98.5
98.25
98.00
97.75
97.50
0.4
www.rfmd.com/products/powerconversion/
0.8
1.2
1.6
Output Power (kW)
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD.
2.0
2.4
These products comply with
RFMD’s green packaging standards.
RFJS3006F
Package: Isolated TO247
rGAN-HV™ 650V SSFET with
Ultra-Fast Freewheeling Diode
The RFJS3006F is a 30A, 650V normally-off sourced switched FET (SSFET)
GaN HEMT providing the same insulated gate ease of use as a power
MOSFET or an IGBT, but enabling much higher efficiency at much higher
PWM frequencies. The SSFET uses the bidirectional capability of the GaN
HEMT to provide an ultra-fast freewheeling diode function eliminating the
need for a separate antiparallel diode.
1
RFJS3006F Turn On Waveform
Drain
Boost EVB
ID = 10A
I0ns/Div
Gate
3
VDS 386V
2
Source
Key Features
■ Advanced High Voltage
GaN Technology
■ Normally-off Insulated Gate
RFJS3006F Turn Off Waveform
■ 650V BVDS
■ 45mΩ Max RDS(on)
■ 30A ID (cont)
Boost EVB
ID = 10A
I0ns/Div
■ UL Isolated Mounting Tab
■ Ultra-Low Switching Losses
— EON 20μJ
— EOFF 30μJ
VDS 386V
■ Intrinsic Diode Qrr < 60nC
■ Low-Output Capacitance
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD.
These products comply with
RFMD’s green packaging standards.
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