RFJS3006FDK1 2.4kW GaN Boost Converter EVB Design Kit Key Features ■ ■ ■ ■ ■ ■ High Power: 2400W On-board CCM Control 133kHz Switching Freq Protection: OVP, OCP, OPL Soft Start-up High Efﬁciency The RFJS3006FDK1 EVB Design Kit consists of a fully assembled evaluation board functioning as Boost (step-up) converter working in Continuous Conduction Mode (CCM). The purpose of this EVB is to enable users to easily evaluate the rGaNHV™ RFJS3006F power switch performance in a typical boost or PFC application and demonstrating its high efﬁciency at 2.4KW while operating at a relatively high PWM frequency of 133kHZ. This evaluation board consists of a RFJS3006F with a driver and a Sic Schottky diode with an on-board CCM Controller IC and Inductor. Block Diagram SiC Schottky Diode C3D20060D Speciﬁcations Rating Max Output Power 2400W Input Voltage Range 180 VDC to 240 VDC Regulated Output 386V Switching Frequency 133kHz Maximum Efﬁciency 99% Efﬁciency at 2.4kW 99% Ordering Information RFJS3006FDK1 - $1,125.00 each 2.4kW Boost EVB Design kit includes 4 extra samples of RFJS3006F RFJS3006F 650V, 30A, 45mohm SSFET power switch in IsoTO247 package VIN CIN rGaN-HV Switch RFJS3006F COUT RLOAD PWM Controller NCP16548D133R2G Efﬁciency Curve Boost EVB Power Stage Efﬁciency Vin=220V, Vout=386V 99.25 99.0 Efficiency Parameter 98.75 98.5 98.25 98.00 97.75 97.50 0.4 www.rfmd.com/products/powerconversion/ 0.8 1.2 1.6 Output Power (kW) RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD. 2.0 2.4 These products comply with RFMD’s green packaging standards. RFJS3006F Package: Isolated TO247 rGAN-HV™ 650V SSFET with Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET (SSFET) GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efﬁciency at much higher PWM frequencies. The SSFET uses the bidirectional capability of the GaN HEMT to provide an ultra-fast freewheeling diode function eliminating the need for a separate antiparallel diode. 1 RFJS3006F Turn On Waveform Drain Boost EVB ID = 10A I0ns/Div Gate 3 VDS 386V 2 Source Key Features ■ Advanced High Voltage GaN Technology ■ Normally-off Insulated Gate RFJS3006F Turn Off Waveform ■ 650V BVDS ■ 45mΩ Max RDS(on) ■ 30A ID (cont) Boost EVB ID = 10A I0ns/Div ■ UL Isolated Mounting Tab ■ Ultra-Low Switching Losses — EON 20μJ — EOFF 30μJ VDS 386V ■ Intrinsic Diode Qrr < 60nC ■ Low-Output Capacitance RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2014 RFMD. These products comply with RFMD’s green packaging standards.