tisp6151x

V
AV E
AI
PL
IA
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TISP61511D
*R
oH
S
CO
M
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
LE
AD
FR
EE
This model is currently available, but not
recommended for new designs. The
Model TISP61521 is functionally
similar and pin-to-pin compatible.
Ro VE LEA
HS RS D
CO ION FRE
M SA E
PL R
IA E
NT
*
TISP61511D Gated Protectors
D Package (Top View)
Dual Voltage-Programmable Protectors.
– Wide 0 to -80 V Programming Range
– Low 5 mA max. Triggering Current
– High 150 mA min. Holding Current
(Tip)
Shape
ITSP
Standard
A
2/10 s
TR-NWT-001089
170
0.5/700 s
RLM88/I3124
40
TR-NWT-001089
30
1.2/50 s
10/700 s
10/1000 s
ETS 300 047-1
K17, K20, K21
1
8
K1 (Tip)
2
7
A
(Ground)
NC
3
6
A
(Ground)
(Ring) K2
4
5
K2 (Ring)
(Gate) G
Rated for International Surge Wave Shapes
Voltage Wave
K1
MD6XANB
NC - No internal connection
Terminal typical application names shown in
parenthesis
90
40
Device Symbol
K1
Functional Replacements for
Device Type
Package
Type
Functional
Replacement
Order As
LCP1511,
LCP1511D,
ATTL7591AS,
MGSS150-1
8-pin
SmallOutline
TISP61511DR-S
for Taped and
Reeled
................................................................UL Recognized
Description
The TISP61511D is a dual forward-conducting buffered p-gate over-voltage protector. It is designed to protect monolithic Subscriber Line Interface Circuits, SLICs, against overvoltages on the telephone line caused
by lightning, ac power contact and induction. The TISP61511D limits
voltages that exceed the SLIC supply rail voltage.
G
A
K2
SD6XAE
Terminals K1, K2 and A c orrespond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the
voltage, VGG, applied to the G terminal.
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector
gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the
protection voltage will track the negative supply voltage the overvoltage stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC
negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding current of the crowbar helps prevent d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power
cross and induction.
How To Order
Device
Package
TISP61511
D (8-pin Small-Outline)
Carrier
Embossed Tape Reeled
Order As
TISP 61511DR-S
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 1995 — REVISED JANUARY 2016
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Absolute Maximum Ratings
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, VGK = 0,- 40 °C ≤ TJ ≤ 85 °C
VDRM
-100
V
Repetitive peak gate-cathode voltage, VKA = 0,- 40 °C ≤ TJ ≤ 85 °C
VGKRM
-85
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 µs
30
5/310 µs
40
ITSP
0.2/310 µs
A
40
1/20 µs
90
2/10 µs
TJ = -40 °C
120
TJ = 25 °C, 85 °C
170
Non-repetitive peak on-state curr ent, 50 Hz (see Notes 1 and 2)
full-sine-wave, 20 ms
5
ITSM
1s
A
3.5
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
IGSM
2
A
TJ
-55 to +150
°C
Tstg
-55 to +150
°C
Junction temperatur e
Storage temperature range
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns
to its initial conditions. See the applications section for the details of the impulse generators.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature.
Recommended Operating Conditions
Component
CG
Min
Gate decoupling capacitor
Typ
Max
220
Unit
nF
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
Parameter
ID
V(BO)
VGK(BO)
VT
VF
VFRM
NOTE
Off-state current
Breakover voltage
Gate-cathode voltage
at breakover
On-state voltage
Forward voltage
Test Conditions
VD = -85 V,V GK = 0
Min
Typ
Max
Unit
TJ = 25 °C
5
µA
TJ = 70 °C
50
µA
V
IT = 30 A, 10/1000 µs, 1 kV, RS = 33 Ω, di/dt(i) = 8 A/µs (see Note 3)
-58
IT = 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/ dt (i) = 14 A/µs (see Note 3)
10
IT = 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt (i) = 70 A/µs (see Note 3)
20
IT = 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/ dt (i) = 40 A/µs (see Note 3)
25
IT = 0.5 A, tw = 500 µs
3
IT = 3 A,t
w
= 500 µs
4
IF = 5 A,t
w
= 500 µs
3
IF = 30 A, 10/1000 µs, 1 kV, RS = 33 Ω, di/dt(i) = 8 A/µs (see Note 3)
5
Peak forward recovery
IT = 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/dt (i) = 14 A/µs (see Note 3)
5
voltage
IT = 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt (i) = 70 A/µs (see Note 3)
7
IT = 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/ dt (i) = 40 A/µs (see Note 3)
12
V
V
V
V
3: All tests have CG = 220 nF and VGG = -48 V. RS is the current limiting resistor between the output of the impulse generator and
the R or T terminal. See the applications section for the details of the impulse generators.
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
IH
Test Conditions
Holding current
IT = 1 A, di/dt = -1A /ms, VGG = -48 V
Gate reverse current
VGG = -75 V, K and A terminals connected
IGT
Gate trigger current
IT = 3 A,t
p(g) ≥
20 µs, VGG = -48 V
VGT
Gate trigger voltage
IT = 3 A,t
p(g) ≥
20 µs, VGG = -48 V
NOTE
Anode-cathode offstate capacitance
Typ
Max
150
IGAS
CAK
Min
mA
TJ = 25°C
5
TJ = 70°C
µA
50
µA
5
mA
2.5
V
VD = -3 V
100
pF
VD = -48 V
50
pF
0.2
f = 1 MHz,V d = 1 V,I G = 0, (see Note 4)
Unit
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
RθJA
Junctio n to free air thermal resistance
Test Conditions
Ptot = 0.8 W, TA = 25°C
5 cm 2, FR4 PCB
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Min
D Package
Typ
Max
Unit
170
°C/W
TISP61511D Gated Protectors
Parameter Measurement Information
+i
Quadrant I
IFSP (= |ITSP|)
Forward
Conduction
Characteristic
IFSM (= |ITSM|)
IF
VF
VGK(BO)
VGG
-v
VD
+v
ID
I(BO)
IH
IS
V(BO)
VS
VT
IT
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
PM6XAAA
Figure 1. Voltage-Current Characteristic
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
TI6LAA
VGEN = 250 Vrms
RGEN = 10 to 150 Ω
10
1
0·1
1
10
100
t - Current Duration - s
Figure 2.
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
1000
TISP61511D Gated Protectors
DEVICE PARAMETERS
General
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage
breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristors, the existing thyristor terminology
did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic.
Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilized.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the
fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote
an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Bourns approach is to use terms related to the device internal structure, rather than its application usage as a single
device may have many applications each using a different terminology for circuit connection.
Alternative Symbol Cross-Reference Guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols
have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability
will be assumed from the use of this guide.
Parameter
Non-repetitive peak on -state pulse current
Off-state current
Gate reverse current (with A and K terminals connected)
Off-state voltage
Data Sheet
Alternative
Symbol
Symbol
ITSP
IPP
ID
IGAS
VD
IR
IRM
IRG
VR
VRM
Peak forward recovery voltage
VFRM
VFP
Breakover voltage
V(BO)
VSGL
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal)
Alternative Parameter
Peak pulse current
Reverse leakage current LINE/GND
Reverse leakage current GATE/LINE
Reverse voltage LINE/GND
Peak forward voltage LINE/GND
Dynamic switching voltage GND/LINE
Vgate
VG
VGATE
GATE/GND voltage
VS
Repetitive peak off-state voltage
VDRM
VMLG
Maximum voltage LINE/GND
Repetitive peak gate-cathode voltage
VGKM
VMGL
Maximum voltage GATE/LINE
Gate-cathode voltage
Gate-cathode voltage at breakover
Cathode-anode voltage
VGK
VGL
GATE/LINE voltage
VGK(BO)
VDGL
Dynamic switching voltage GATE/LINE
VK
VLG
VGND/LINE
LINE/GND voltage
Anode-cathode capacitance
CAK
Coff
Off-state capacitance LINE/GND
Cathode 1 terminal
K1
Tip
Tip terminal
Cathode 2 terminal
K2
Ring
Anode terminal
A
GND
Ground terminal
Gate terminal
G
Gate
Gate terminal
RθJA
Rth (j-a)
Thermal Resistance, junction to ambient
Ring terminal
Thermal Resistance, junction to ambient
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
APPLICATIONS INFORMATION
Electrical Characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction temperature, TJ. Hence a characteristic
value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial
testers, which generally minimize the temperature rise caused by testing.
Application Circuit
Figure 3 shows a typical TISP61511D SLIC card protection circuit. The incoming line wires, R and T, connect to the relay matrix via the series
overcurrent protection. Fusible resistors, fuses and positive temperature coefficient (PTC) resistors can be used for overcurrent protection.
Resistors will reduce the prospective current from the surge generator for both the TISP61511D and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator configuration may be ground or
battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as its inter-wire protection voltage is
twice the wire to ground value.
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP61511D protector. The protector gate reference voltage comes from the
SLIC negative supply (VBAT). A 220 nF gate capacitor sources the high gate current pulses caused by fast rising impulses.
OVERCURRENT
PROTECTION
TIP
WIRE
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
Th1
R1a
SLIC
RELAY
S3a
SLIC
PROTECTOR
SLIC
Th4
S2a
S1a
Th3
RING
WIRE
R1b
Th5
Th2
TISP
3xxxF3
OR
7xxxF3
S3b
S1b
S2b
TISP
61511D
VBAT
220 nF
TEST
EQUIPMENT
RING
GENERATOR
AI6XAA
Figure 3. Typical Application Circuit
Impulse Conditions
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of Peak Amplitude (voltage or current), rise time and a decay time to 50 % of the
maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time . A 38 A, 5/310 µs wave shape would have a
peak current value of 38 A, a rise time of 5 µs and a decay time of 310 µs.
There are three categories of surge generator type; single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same waveshape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open circuit voltage
and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit
current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically
produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance the wave shape
produced is intermediate between the open circuit and short circuit values.
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Impulse Conditions (Continued)
When the TISP switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in terms of
open circuit voltage, it is the current waveshape that must be used to assess the TISP surge requirement. As an example, the CCITT IX K17
1.5 kV, 10/700 µs surge is changed to a 38 A 5/310 µs waveshape when driving into a short circuit. The impulse generators used for rated
values are tabulated below
Impulse Generators used for Rated Values
Peak Voltage
Voltage
Generator Fictive
External
Standard
Setting
Wave Form
Source Impedance
Series Resistance
V
µs
Y
Y
A
µs
TR-NWT-001089
2500
2/10
5
10
170
2/10
ETS 300 047-1
3000
1.2/50
38
0
80
0.6/18
RLM88/I3124
1600
0.5/700
40
0
40
0.2/310
Peak Current
Current
Wave Form
K17, K20, K21
1600
10/700
40
0
40
5/310
TR-NWT-001089
1000
10/1000
10
23
30
10/1000
Figures 4. and 5. show how the TISP61511D limits negative and positive overvoltages. Negative overvoltages (Figure 4.) are initially clipped
close to the SLIC negative supply rail value (VBAT). If sufficient current is available from the overvoltage, then the protector (Th5) will crowbar
into a low voltage on-state condition. As the overvoltage subsides the high holding current of the crowbar prevents dc latchup. The protection
voltage will be the sum of the gate supply (VBAT) and the peak gate-cathode voltage (VGK(BO)). The protection voltage will be increased if there
is a long connection between the gate decoupling capacitor, C, and the gate terminal. During the initial rise of a fast impulse, the gate current
(IG) is the same as the cathode current (IK ). Rates of 70 A/µs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring track. To
minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be minimized.
Inductive voltages in the protector cathode wiring can increase the protection voltage. These voltages can be minimized by routing the SLIC
connection through the protector as shown in Figure 3.
SLIC
PROTECTOR
IK
IF
Th5
TISP
61511D
C
220 nF
SLIC
PROTECTOR
SLIC
SLIC
Th5
TISP
61511D
IG
VBAT
VBAT
AI6XAB
Figure 4. Negative Overvoltage Condition
220 nF
AI6XAC
Figure 5. Positive Overvoltage Condition
Positive overvoltages (Figure 5.) are clipped to ground by forward conduction of the diode section in protector (Th5). Fast rising impulses will
cause short term overshoots in forward voltage (VFRM).
The thyristor protection voltage, (V(BO)) increases under lightning surge conditions due to thyristor regeneration time. This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its breakdown region. The diode protection voltage, known as
the forward recovery voltage, (VFRM ) is dependent on the rate of current rise, di/dt. An estimate of the circuit di/dt can be made from the surge
generator voltage rate of rise, dv/dt, and the circuit resistance. The impulse generators used for characterizing the protection voltages are
tabulated on the next page.
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Impulse Generators used for Electrical Characteristic Values
Peak Voltage
Voltage
Generator Fictive
External Series
Standard
Setting
Wave Form
Source Impedance
Resistance
V
µs
Y
Y
A
A/µs
µs
TR-NWT-001089
2500
2/10
5
61
38
40
2/10
0.6/21
Peak Current
Di/dt(I) Initial
Current
Rate Of Rise
Wave Form
ETS 300 047-1
1500
1.2/50
38
12
30
70
K17, K20, K21
1500
10/700
40
10
30
14
5/350
TR-NWT-001089
1000
10/1000
10
23
30
8
10/1000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 1995 — REVISED JAN 2016
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.