DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Abstract Circuit Details 5)0' V SXB-2089 is a high high linearity InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) & 2140MHz (UMTS Band). RFMD will provide the detailed layout (AutoCad format) to users wishing to use the exact same layout and substrate material shown in the following circuits. The circuits recommended within this application note were designed using the following PCB material: Introduction The application circuits herein were designed to achieve the optimum combination of linearity, input return loss, and stability. All recommended components are standard values available from well-known manufacturers. Components specified in the bill of materials (BOM) have known parasitics which in some cases are critical to the circuit’s performance. Deviating from the recommended BOM may result in a performance shift due to varying parasitics Matching component placement is critical to each circuit’s performance. S im p lifie d D e v ic e S c h e m a tic w ith E S D d io d e s Material: GETEK™ ML200C Core thickness: 0.031” Copper cladding: 0.5 oz both sides Dielectric constant: 4.1 (at 1 MHz) Dielectric loss tangent: 0.0089 (at 1 GHz) Customers not wishing to use the exact material and layouts shown in this application note can design their own PCB using the critical transmission line impedances and phase lengths shown in the BOMs and layouts. NOTE: Many of our sample evaluation boards may come with an additional substrate & copper layer for mechanical stability. It has been assumed that the backside layer has no effect on the RF performance or circuit design. N a rro w b a n d A p p . C k t. V c /O u tp u t N a rro w b a n d A p p . C k t. In p u t . G nd Freq.(MHz) 420 450 480 2110 2140 2170 Vd (V) 5.2 5.2 5.2 5.2 5.2 5.2 Id (mA) 135 135 135 135 135 135 P1dB 24.2 24.1 24.1 24.8 24.7 24.7 Performance Summary OIP3 40.4 39.7 39.9 43.0 43.6 43.9 ACP Ch. Pwr. 16.0 15.6 NF 4.6 4.9 5.3 4.1 4.2 4.4 S11 -17.9 -32.8 -20.1 -18.1 -19.3 -16.4 Gain 25.4 25.3 25.1 17.1 17.1 16.9 Isol -30.2 -30.0 -29.9 -23.1 -23.0 -23.0 S22 -33.8 -24.4 -17.1 -21.5 -22.9 -22.0 Vs=8V, RBias=20 Ohm, T=+25C IP3 with 11dBm Tones/1MHz spacing ACP Ch. Pwr. at 450MHz = -55dBc IS-95 with 9Ch. Fwd estat Conditions: ACP Ch. Pwr. 2140MHz = -50dBc WCDMAwith 64Ch. Fwd The information provided herein is believed to be reliable at press time. RFMD assumes no responsibility for i naccuracies or omissions. RFMD assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to chang e without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party . RFMD does not authorize or warrant any RFMD product for use in lif e-support devices and/or systems. Copyright 2005 RFMD. All worldwide right s reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.RFMD.com EAN-104670 Rev A DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits 450 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V P1dB vs. Frequency 26 ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 450MHz) -40 26 ACP (dB) P1dB (dBm) -40C 85C -50 25 24 24 25C 23 -55 -60 -65 -40C -70 85C 23 -75 Test 22 Conditions: 420 25C -45 25 430 440 450 460 470 10 480 11 12 28 18 19 S22 -15 -20 24 dB Gain (dB) 17 S12 -10 25C 22 420 -25 -40C -30 85C -35 440 460 480 -40 420 500 Frequency (MHz) OIP3 vs. Freq. (11dBm Output Tones) 430 44 44 42 42 440 450 Frequency (MHz) 460 470 480 OIP3 vs. Tone Power @450MHz 46 25C -40C OIP3 (dBm) OIP3 (dBm) 16 S11 -5 26 46 15 Input/Output Return Loss, Isolation vs. Frequency, T=25C S21 vs. Temperature 0 20 400 14 Channel Power (dBm) Frequency (MHz) 30 13 40 38 25C 85C 40 38 -40C 36 34 420 85C 430 36 440 450 460 470 480 34 Frequency (MHz) 2 4 6 8 10 Pout per tone (dBm) 12 14 16 880 MHz & 1960MHz Application Circuits available in Datasheet at www.RFMD.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.RFMD.com EAN-104670 Rev A DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits 2140 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V P1dB vs. Frequency 26 ACP vs. Ch. Pwr. (WCDMA 64Ch. Fwd 2140MHz) -35 26 25 24 25C -45 85C -40C -50 24 25C -55 -40C 23 85C -60 23 22 2110 -40 ACP (dB) P1dB (dBm) 25 2120 2130 2140 2150 2160 2170 -65 11 12 13 0 25C -40C 85C 20 16 17 18 S11 -5 S12 S22 -10 18 -15 -20 16 dB Gain (dB) 15 Input/Output Return Loss, Isolation vs. Frequency, T=25C S21 over Temperature 22 14 Channel Power (dBm) Frequency (MHz) -25 -30 14 -35 12 2110 2120 2130 2140 2150 2160 -40 2110 2170 Frequency (MHz) OIP3 vs. Freq. (11dBm Output Tones) 44 44 42 42 40 25C 38 -40C 85C 36 34 2110 2120 2130 2140 2150 2160 2170 2130 2140 Frequency (MHz) 2150 2160 2170 OIP3 vs. Tone Power @2140MHz 46 OIP3 (dBm) OIP3 (dBm) 46 2120 40 38 25C 36 85C -40C 34 Frequency (MHz) 2 4 6 8 10 Pout per tone (dBm) 12 14 16 880 MHz & 1960MHz Application Circuits available in Datasheet at www.RFMD.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.RFMD.com EAN-104670 Rev A DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Application Schematic & Assembly Drawing 450MHz Circuit Note: Electrical lengths 50Ω, 5.0° 50Ω, 2.1° 50Ω, 2.0° 50Ω, 1.6° 50Ω, 1.2° 50Ω, 3.4° 50Ω, 2.1° 50Ω, 1.5° 50Ω, 1.5° 50Ω, 2.1° 50Ω, 1.7° 50Ω, 2.0° 50Ω, 3.4° 50Ω, 3.3° RF In Ζ11 Ζ6 68Ω 270nH Ζ2 5.6nH Ζ3 3.9Ω 120nH SXB-2089Z Ζ4 Ζ7 Ζ10 Ζ12 Ζ13 15nH 12pF Ζ9 47pF 1.0uF Tantalum 1200pF Ζ8 Ζ1 20Ω 180Ω Ζ5 Ζ1 Ζ2 Ζ3 Ζ4 Ζ5 Ζ6 Ζ7 Ζ8 Ζ9 Ζ10 Ζ11 Ζ12 Ζ13 Ζ14 are determined from the center of a shunt component and a cut on the center trace 1200pF Ζ14 3.9pF 120pF RF Out 910Ω + Bill of Materials 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 C1 TAJB105KLRH Rohm 1.0uF C2,C5 MCH185C122KK Rohm 1200pF C3 MCH185A121JK Rohm 120pF C4 MCH185A3R9CK Rohm 3.9pF C6 MCH185A120JK Rohm 12pF C7 MCH185A470JK Rohm 47pF L1 LL1608-FSR12J Toko 120nH L2 LL1608-FS15NJ Toko 15nH L3 LL1608-FSR27J Toko 270nH L4 LL1608-FS5N6S Toko 5.6nH R1 20Ω 2512 res (1%) R2 180Ω 0603 res (5%) R3 68Ω 0603 res (5%) R4 3.9Ω 0603 res (5%) R5 910Ω 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-101407 PCB ECB-102925-B http://www.RFMD.com EAN-104670 Rev A DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Application Schematic & Assembly Drawing 2140MHz Circuit Note: Electrical lengths 50Ω, 8.6° 50Ω, 7.8° 50Ω, 7.3° 50Ω, 6.3° 50Ω, 5.5° 50Ω, 16.3° 50Ω, 10.2° 50Ω, 7.0° 50Ω, 7.0° 50Ω, 10.2° 50Ω, 8.0° 50Ω, 39.1° 50Ω, 6.9° Ζ11 Ζ6 68Ω 1.5pF 2.7Ω Ζ3 Ζ4 Ζ10 Ζ7 2.2pF 1200pF Ζ9 RF In Ζ2 8.2nH SXB-2089Z Ζ8 Ζ1 1.0uF Tantalum 1200pF 27nH 2.2pF 20Ω 180Ω Ζ5 Ζ1 Ζ2 Ζ3 Ζ4 Ζ5 Ζ6 Ζ7 Ζ8 Ζ9 Ζ10 Ζ11 Ζ12 Ζ13 are determined from the center of a shunt component and a cut on the center trace Ζ12 Ζ13 1.0pF 12pF RF Out 1.8ΚΩ + Bill of Materials 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 C1 TAJB105KLRH Rohm 1.0uF C2,C5 MCH185C122KK Rohm 1200pF C3 MCH185A120JK Rohm 12pF C4 MCH185A010CK Rohm 1.0pF C6 MCH185A1R5CK Rohm 1.5pF C7,C8 MCH185A4R7CK Rohm 2.2pF L1 LL1608-FS8N2J Toko 8.2nH L2 LL1608-FS270JK Toko 27nH R1 20Ω 2512 res (1%) R2 180Ω 0603 res (5%) R3 68Ω 0603 res (5%) R4 2.7Ω 0603 res (5%) R5 1.8KΩ 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-101407 PCB ECB-102925-B http://www.RFMD.com EAN-104670 Rev A