cmbt2222a.pdf

CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings
Collector-base voltage (open emitter)
Collector-emmitter voltage (open base)
Emmitter base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to
Tamb = 25oC
D.C. current gain
IC = 150mA; VCE = 10V
IC = 500mA; VCE = 10V
Transition frequency at f = 100MHZ
IC = 20mA; VCE = 20V
Symbol
Value
UNIT
VCBO
max 75
V
VCEO
max 40
V
VEBO
max 6.0
V
IC
max 600
mA
Ptot
max 250
mW
hFE
fT
Ratings (at TA = 25oC unless otherwise specified)
Limmiting values
Symbol
Collector-base voltage (open emitter)
VCBO
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to
Tamb = 25oC
Storge Temperature
Junction Temperature
Thermal Resistance
from junction to Ambient
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100 to 300
>
40
>
300
MHZ
Value
UNIT
max 75
V
VCEO
max 40
V
VEBO
max 6.0
V
IC
max 600
mA
Ptot
max 250
mW
Tstg
Tj
-55 to +150
max 150
Rth j-a
500
o
o
C
C
K/W
1 of 3
CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Characteristics (at Tj=25 oC unless otherwise specified)
Symbol
Collector cut-off current
IE = 0; VCB = 60V
ICBO
o
ICBO
IE = 0; VCB = 60V; Tj = 125 C
VEB = 3 V; VCE = 60V
ICEX
Base current
IBEX
with reverse biased emitter junction
VFB = 3V; VCE = 60V
Emitter-base cut-off current
IEBO
IC = 0; VEB = 3 V
Saturation voltage
IC = 150mA; IB = 15 mA
VCEsat
VBEsat
IC = 500mA; IB = 50 mA
VCEsat
VBEsat
Breakdown voltages
IC = 1.0mA; IB = 0
V(BR)CEO
IC = 100uA; IE = 0
V(BR)CBO
IC = 0; IE = 10uA
V(BR)EBO
D.C. current gain
IC = 0.1mA; VCE = 10V
IC = 1mA; VCE = 10V
IC = 10mA; VCE = 10V
IC = 10mA; VCE = 10V; Tamb= -55oC
IC = 150mA; VCE = 10V
IC = 150mA; VCE = 1V
IC = 500mA; VCE = 10V
Transition frequency at f = 100 MHZ
IC = 20mA; VCE = 20V
Output capacitance at f = 1 MHZ
IE = 0; VCB = 10V
Input capacitance at f = 1 MHZ
IE = 0; VEB = 0.5V
Noise figure at RS = 1K ohm
IC = 100uA; VCE = 10V; f= 1kHZ
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hFE
Value
< 0.01
<
10
<
10
UNIT
uA
nA
<
20
nA
<
10
nA
< 300
0.6 to 1.2
<
1.0
<
2.0
>
>
>
40
75
6.0
mV
V
V
V
V
>
35
>
50
>
75
>
35
100 to 300
> 50
>
40
fT
>
300
MHZ
CO
<
8.0
pF
Ci
<
25
pF
F
<
4.0
dB
2 of 3
CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Switching times
(between 10% and 90% levels)
Turn-on time switched to IC= 150mA
delay time
rise time
Turn-off time switched from IC= 150mA
storage time
fall time
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td
tr
<
<
10
25
ts
tf
<
<
225
60
ns
3 of 3
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