cmbta13.pdf

CMBTA13
NPN Small-Signal Darlington Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings
Collector-emmitter voltage (open base)
VBE = 0
Collector current (d.c.)
Total power dissipation up to
Tamb = 25oC
Junction Temperature
D.C. current gain
IC = 10mA; VCE = 5V
Transition frequency at f = 100MHZ
IC = 10mA; VCE = 5V
Symbol
Value
UNIT
VCES
max 30
V
IC
max 300
mA
Ptot
max 250
mW
Tj
max 150
hFE
min 5000
fT
min 125
MHZ
Value
UNIT
max 30
V
max 30
V
VEBO
max 10
V
IC
max 300
mA
Ptot
max 250
mW
Tstg
Tj
-65 to +150
max 150
RthA
500
Ratings (at TA = 25oC unless otherwise specified)
Limmiting values
Symbol
Collector-base voltage (open emitter)
VCBO
VBE = 0
Collector-emitter voltage (open base)
VCES
VBE = 0
Collector-base voltage (open collector)
Collector current
Total power dissipation up to
Tamb = 25oC
Storge Temperature
Junction Temperature
Thermal Resistance
from junction to Ambient
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o
o
o
C
C
C
K/mW
1 of 2
CMBTA13
Characteristics (at Ta=25 oC unless otherwise specified)
Symbol
Value
Collector-emitter breakdown voltage
V(BR)CES
min 30
IC = 100 uA
Emitter-base cut-off current
IEBO
max 0.1
VBE = 10 V
Emitter-base cut-off current
ICBO
max 0.1
VCB = 10 V
D.C. current gain
IC = 10mA; VCE = 5V
hFE
min 5000
min 10000
IC = 100mA; VCE = 5V
Collector-emitter saturation voltage
VCEsat
max 1.5
IC = 100mA; IB = 0.1 mA
Base-emitter On voltage
VBE(on)
max 2
IC = 100mA; VCE = 5V
Transition frequency at f = 100 MHZ
fT
min 125
IC = 10mA; VCE = 5V
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UNIT
V
uA
uA
V
V
MHZ
2 of 2
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