bc817.pdf

BC817
TECHNICAL SPECIFICATION
NPN Silicon Planar Epitaxial Transistor
1
2
3
Dimensions SOT-23
BASE
EMITTER
COLLECTOR
Absolute Maximun Ratings (Ta=25oC unless specified otherwise)
Desription
Collector-Emitter Voltage (V BE = 0V)
Collector Emitter Voltage (open base)
IC = 10mA
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
SYMBOL
VALUE
UNITS
VCES
50
V
VCEO
45
V
VEBO
5
V
IC
500
mA
ICM
1000
mA
(-IEM )
1000
mA
Base Current - (DC)
IB
100
mA
Base Current - Peak
IBM
200
mA
Emitter Current - Peak
Total Power Dissipation up to Tamb = 25 °C
Ptot
250
mW
Storage Temperature
Tstg
(-55 to +150)
°C
Junction Temperature
TJ
150
°C
Rth(j-a)
500
k/W
Thermal Resistance
From junction to ambient
Electical Characteristics
(at Ta = 25°C unless otherwise specified)
Symbol
Test Conditions
Typ.
Unit
VCB = 20V, IE = 0, TJ = 150°C
<
<
100
5
nA
µA
VCB = 20V, IE = 0, TJ = 25°C
Collector Cut off Current
ICBO
Emitter cut-off current
IEBO
IC = 0, VEB = 5V
<
10
µA
Base Emitter on Voltage
VBE
IC = 500 mA, VCE = 1V
<
1, 2V
V
VCEsat
IC = 500 mA, IB = 50mA
<
700
mV
IC = 500 mA, VCE = 1V
>
-
40
100 to 600
Saturation Voltage
DC Current Gain
hFE
Collector Capacitance
CC
IE = IE = 0, VCB = 10V,
f = 1MHz
typ.
5
pF
Transition Frequency
fT
IC = 10mA, VCE = 5V,
f =100MHz
>
100
MHz
IC = 100 mA, VCE = 1V
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