efm201a-efm207a.pdf

EFM201A
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EFM207A
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Amperes
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.067 (1.70)
0.051 (1.29)
0.110 (2.79)
0.086 (2.18)
0.180(4.57)
0.160(4.06)
0.012 (0.305)
0.006 (0.152)
0.091 (2.31)
0.067 (1.70)
0.059 (1.50)
0.035 (0.89)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
RATINGS
SYMBOL
EFM201A EFM202A EFM203A EFM204A EFM205A EFM206A EFM207A
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS Volts
V RMS
35
70
105
140
210
280
420
Volts
VDC
50
100
150
200
300
400
600
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T A = 55 oC
Operating and Storage Temperature Range
CJ
T J , T STG
Amps
75
I FSM
Typical Junction Capacitance (Note 2)
Amps
2.0
IO
Peak Forward Surge Current I FM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
30
pF
20
0
-55 to + 150
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 2.0A DC
Maximum DC Reverse Current
@T A = 25 o C
at Rated DC Blocking Voltage
@T A =150 o C
SYMBOL
VF
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
EFM201A EFM202A EFM203A EFM204A EFM205A EFM206A EFM207A
0.95
1.25
1.70
5.0
IR
UNITS
Volts
uAmps
50
trr
35
50
nSec
2003-3
AVERAGE FORWARD CURENT, (A)
RATING AND CHARACTERISTIC CURVES ( EFM201A THRU EFM207A )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
+0.5A
(-)
(+)
-1.0A
1cm
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
10
1.0
TJ = 25
06
M2
A
EF
204
FM
A
~E
01A
TJ = 100
1.0
M2
10
EF
TJ = 150
A
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
100
.01
.1
TJ = 25
.01
Pulse Width = 300uS
1% Duty Cycle
.001
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
0
JUNCTION CAPACITANCE, (pF)
105
90
8.3ms Single Half Sine-Wave
(JEDEC Method)
75
60
45
30
15
0
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
0 25 50 75 100 125 150175
AMBIENT TEMPERATURE (
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
.1
0
SET TIME BASE FOR
10 ns/cm
07
NOTES:1 Rise Time = 7ns max. Input Impedance =
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
A~
OSCILLOSCOPE
(NOTE 1)
-0.25A
2.0
M2
1
NONINDUCTIVE
0
05
25 Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
3.0
EF
D.U.T
(+)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
M2
10
NONINDUCTIVE
EF
50
NONINDUCTIVE
200
100
60
40
EFM
201
20
A~E
FM
EFM
10
6
4
205
TJ = 25
204
A
A~E
FM2
07A
2
1
.1
.2 .4
1.0
2
4
10
20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
)
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
Dimensions in inches and (millimeters)
RECTRON
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