RECTRON HFM101W SEMICONDUCTOR THRU TECHNICAL SPECIFICATION HFM108W SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram SMX MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .209 (5.31) .185 (4.70) .110 (2.79) .086 (2.18) .180 (4.57) .091 (2.31) .067 (1.70) .160 (4.06) .008 (0.20) .011 (0.28) .007 (0.18) .010 (0.25) .071 (1.80) .051 (1.30) .059 (1.50) .035 (0.89) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS SYMBOL HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 Volts Maximum RMS Volts VRMS 35 70 140 210 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 Volts Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range IO 1.0 Amps 30 IFSM CJ 15 TJ, TSTG Amps 12 pF 0 -65 to + 150 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL VF Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC IR Maximum Reverse Recovery Time (Note 1) trr NOTES : 1. Test Conditions: IF=0.5A, I R=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. 3. ”Fully ROHS compliant”,”100% Sn plating (Pb free). HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W 1.0 1.3 50 1.7 UNITS Volts 50 uAmps 5.0 100 uAmps uAmps 75 nSec 2005-10 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) 0 (NOTE 2) (+) -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm 1.0 TJ = 25 .1 .01 10 8W FM ~H 103 W ~H FM 1.0 .1 TJ = 25 .01 Pulse Width = 300uS 1% Duty Cycle .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) FM 10 5W 10 01W TJ = 100 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS M1 TJ = 150 10 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( HF 100 INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 0 ~H 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms. W NOTES:1 Rise Time = 7ns max. Input Impedance = 1.0 6W OSCILLOSCOPE (NOTE 1) 04 1 NONINDUCTIVE Single Phase Half Wave 60Hz Resistive or Inductive Load 10 GENERATOR -0.25A M PULSE 2.0 M1 D.U.T (+) 25 Vdc (approx) (-) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE HF 10 NONINDUCTIVE HF 50 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( HFM101W THRU HFM108W ) 0 FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 60 JUNCTION CAPACITANCE, (pF) 70 8.3ms Single Half Sine-Wave (JEDEC Method) 50 40 30 20 10 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) 200 100 60 40 HFM 101 20 10 TJ = 25 6 4 W~ HFM 105 W HFM 106 W~ HFM 108 W 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100 ) Mounting Pad Layout 0.094 MAX. (2.38 MAX.) 0.060 MIN. (1.52 MIN.) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) RECTRON