bas85.pdf

RECTRON
BAS85
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SCHOTTKY DIODES
FEATURES
* Fast Switching Device(TRR<4.0nS)
* Mini MELF Glass Case (SOD-80)
* Through-Hole Device Type Mounting
* Hermetically Sealed Glass
* Compression Bonded Construction
* All external surfaces are corrosion resistant and leads
are readily solderable
SOD-80
∅ .059(1.5)
∅ .055(1.4)
.016(0.40)
.008(0.20)
.142(3.6)
.134(3.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
UNITS
SYMBOL
BAS85
VR
30
V
IF
200
mAmps
Maximum Peak Forward Current @ T A =25 OC
IFM
300
mAmps
Surge Forward Current @ tp<1s,T A =25 OC
IFSM
600
mAmps
Maximum Power Dissipation @ T A =65 OC
PD
200
mW
Junction Temperature
TJ
125
O
C
TSTG
-65 to + 150
O
C
RATINGS
Maximum Forward Comtinuous Reverse Voltage
Maximum Forward Comtinuous Current @ T A =25 OC
Storage Temperature Range
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Reverse breakdown voltage (IR=10µA)
MIN.
TYP.
MAX.
UNITS
V(BR)R
30
-
-
V
IR
-
µA
-
2
(IF=0.1mA)
-
0.24
(IF=1mA)
-
0.32
-
0.4
0.5
-
Reverse voltage leakage current (VR=25V)
Forward voltage Pulse Tesx tp<300µs,δ<2%
SYMBOL
(IF=10mA)
VF
-
(IF=30mA)
(IF=100mA)
V
-
0.8
Diode capacitance (VR=1,f=1MHz)
CD
-
-
10
pF
Reveres recovery time (IF=IR=10mA,IR=1mA)
trr
-
-
5
nS
2006-3
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