RECTRON BAS86 SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Fast Switching Device(TRR<4.0nS) * Mini MELF Glass Case (SOD-80) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads are readily solderable SOD-80 ∅ .059(1.5) ∅ .055(1.4) .016(0.40) .008(0.20) .142(3.6) .134(3.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) UNITS SYMBOL BAS86 VR 50 V IF 200 mAmps Maximum Peak Forward Current tp<1s IFM 500 mAmps Surge Forward Current @ tp=10ms IFSM 5 Amps Maximum Power Dissipation @ T A =65 OC PD 200 mW Junction Temperature TJ 125 O C TSTG -65 to + 150 O C RATINGS Maximum Forward Comtinuous Reverse Voltage Maximum Forward Comtinuous Current @ T A =25 OC Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS IR - - 5 µA (IF=0.1mA) - 0.30 (IF=1mA) - 0.38 - 0.45 - 0.60 - 0.90 - 8 Reverse voltage leakage current (VR=40V) Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA) VF - (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) CD - V pF 2006-3