1n4151.pdf

RECTRON
SEMICONDUCTOR
1N4151
TECHNICAL SPECIFICATION
1N4151 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
50
V
Reverse Recovery
trr
2
ns
Time
Power Dissipation
P
500
mW
3.33mW/°C (25°C)
Forward Current
IF
300
mA
Junction Temp.
Tj
-65 to 175 °C
Storage Temp.
Tstg -65 to 175 °C
Dimensions (DO-35)
DO-35
26 MIN
0.457
DIA.
0.559
4.2
max.
2.0
DIA.
max.
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Electrical Characteristics (Ta=25°C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 50mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100Ω
RECTRON USA
26 MIN
Dimensions in millimeters
Symbol
BV
IFsurge
VF
Ratings
75
1.0
Unit
V
A
V
1.0
IR
uA
0.050
50
Cj
pF
2
trr
ns
2
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
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