1n4448w.pdf

RECTRON
1N4448W
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SMALL SIGNAL DIODE
VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere
FEATURES
* Fast Switching Speed
* Surface Mount Package ldeally Suited for
Automatic Insertion
* For General Purpose Switching Applicationgs
* High Conductance
SOD-123
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.01 gram
.110(2.800)
.102(2.600)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.006(.150)
.026(.650)
.018(.450)
.067(1.700)
.059(1.500)
.152(3.850)
.140(3.550)
.003(.080)
*
*
*
*
*
.049(1.250)
.041(1.050)
Ratings at 25 o C ambient temperature unless otherwise specified.
REF .020(0.500)
Single phase, half wave, 60 Hz, resistive or inductive load.
.004(.100)
.000(0.00)
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted)
RATINGS
Non-Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Comtinuous Current
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
@t=1.0uS
@t=1.0S
SYMBOL
1N4448W
UNITS
VRM
VRRM
VRWM
VR
VRMS
IFM
IO
100
Volts
75
Volts
53
500
250
mAmps
mAmps
Volts
IFSM
4.0
2.0
Amps
Typical Reverse Recovery Time (Note 1)
Trr
4
nS
Typical Junction Capacitance (Note 2)
CJ
4
pF
Maximum Power Dissipation (Note 3)
PD
R ΘJA
400
mW
Typical Thermal Resistance
Operating and Storage Temperature Range
O
TJ, TSTG
315
-65 to + 150
ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted)
SYMBOL
CHARACTERISTICS
1N4448W
UNITS
0.715
0.855
1.0
25
Volts
25
nAmps
2.5
uAmps
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
@VR=20V
@VR=75V
VF
IR
. Measured at I F =I R =10mA, I RR =0.1I R And R L =100 .
NOTES : 1.
2. Measured at 1MHz and applied reverse voltage of 0 volts.
3. Part mounted on FR-4 PC board with minimunm recommended pad layout.
C/W
O
C
2006-3
RATING AND CHARACTERISTICS CURVES ( 1N4448W )
100
IF, FORWARD CURRENT (mA)
Pd, POWER DISSIPATION (mW)
300
200
100
0
0
Ta=50OC
75
125
100
Ta=85OC
1
150
0
200
O
TA, AMBIENT TEMPERATURE ( C)
FIG.1 Power Derating Curve
600
800
1000
FIG.2 Typical Forward Chatacteristics
2.5
trr, REVERSE RECOVERY TIME(nS)
IR, LEAKAGE CURRENT (A)
400
VF, FORWARD VOLTAGE (mV)
10.0
Ta=100OC
1.0
Ta=75OC
0.10
Ta=50OC
Ta=25OC
O
Ta=0 C
0.01
O
Ta=-30 C
0.001
Ta=0OC
Ta=30OC
0.1
50
25
Ta=25OC
10
0
60
40
20
80
VR, REVERSE VOLTAGE (V)
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
IF, FORWARD CURRENT (mA)
FIG.3 Typical Reverse Characteristics
FIG.4 Reverse Recovery Time vs.
vs. Forward Current
CT, TOTAL CAPCITANCE (pF)
4
f=1 MHz
3
2
1
0
0
1
2
3
4
5
6
IF, FORWARD CURRENT (mA)
FIG.5 Total Capacicance vs
vs.
s.Reverse
Reverse Voltage
RECTRON
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