MM4150 1N4150 mini-M.E.L.F. SIGNAL DIODE Mechanical Data Items Material Package mini MELF Case Hermetically sealed glass Lead/Finish Chip Double stud/Tin Plating Glass Passivated Hermetically Sealed, Glass Silicon Diodes o Absolute Maximum Ratings (Ta=25 C) Reverse Voltage (continous) Power Dissipation at Tamb= 25 oC 3.33mW/ oC Forward Current (DC) Average Rectified Output Current Repetitive Peak Forward Current Junction Temperature Storage Temperature Range Symbol VR Value 50 UNIT V Ptot 500 mW IF IO 300 200 600 -65 to +200 -65 to +200 mA mA mA IFRM Tj TS o o C C Electrical Characteristics (Ta=25 oC) Minimum Breakdown Voltage @IR= 100uA Peak Forward Surge Current PW<1 sec Maximum Forward Voltage IF = 200 mA Maximum reverse Leakage Current at VR = 50V at VR = 50V, Tj = 150 oC Maximum Junction Capacitance VR= 0, f= 1MHz Reverse Recovery Time IF=10mA to 200mA, IR=10mA to 200mA RL=100 ohms Measured @IR= 0.1xIF Forward Recovery Time Measured from I=0 to IF=200mA tr=0.4ns, tp=100ns, Duty Cycle < 1.0% Measured @ VF=1V Maximum Thermal Resistance Junction to Ambient Air RECTRON USA Symbol BV Min 75 Max - Unit V IFsurge - 500 mA VF - 1.0 V IR - 0.100 100 uA Cj - 2.5 pF trr - 4 ns tfr - 10 ns RthJA - 0.35 o C/mW www.rectron.com